A microwave magnetron includes a cathode for emitting electrons, a filament for receiving a filament current to heat the cathode to enable to cathode to emit the electrons, and an anode to which anodic power can be applied to affect a flow of the electrons. An anodic power input receives the anodic power to be applied to the anode, the anodic power being characterized by an anodic current, an anodic voltage, and an anodic impedance, the anodic impedance being a quotient of the anodic voltage and the anodic current. An electromagnet power input receives electromagnet power and applies the electromagnet power to an electromagnet to control an intensity of a magnetic field, the electromagnet power being characterized by an electromagnet current. A controller adjusts at least one of the parameters of the magnetron to affect the flow of electrons while maintaining the anodic impedance constant.

A device includes a microwave generation unit that generates a microwave having a bandwidth, an output unit, a directional coupler, and a measurement unit. The microwave generation unit generates a microwave of which power is pulse-modulated to have a high level and a low level. The measurement unit determines a first high measured value and a first low measured value respectively indicating a high level and a low level of power of travelling waves in the output unit on the basis of parts of the travelling waves output from the directional coupler. The microwave generation unit controls high level power of the pulse-modulated microwave on the basis of and averaged first high measured value and high level setting power, and controls low level power of the pulse-modulated microwave on the basis of an averaged first low measured value and low level setting power.

Disclosed herein are systems, methods, and devices processing feed material utilizing an upstream swirl module and composite gas flows. Some embodiments are directed to a microwave plasma apparatus for processing a material, comprising: a first flow module, a second flow module, and a liner.

The invention relates to a microwave plasma-assisted deposition modular reactor for manufacturing synthetic diamond. The reactor has at least three modulation elements selected from: a crown adapted to be positioned between a first enclosure part and a second enclosure part; a substrate holder module mobile in vertical translation and in rotation, in contact with a quarter-wave and including at least one fluid cooling system; a tray mobile in vertical translation in order to change the shape and volume of the resonant cavity and including through openings allowing the gases to pass; a gas distribution module, including a removable gas distribution plate comprising an inner surface, an outer surface, and a plurality of gas distribution nozzles forming channels between said surfaces capable of conducting a gas flow, and a support device connected to a cooling system and adapted to accommodate the removable gas distribution plate; and a substrate cooling control module including a removable thermal resistance gas injection device.

A plasma processing apparatus includes a processing chamber that performs a plasma processing using plasma; a placing table provided in the processing chamber and including a substrate placing portion and a focus ring placing portion, the focus ring placing portion surrounding the substrate placing portion; a focus ring disposed on the focus ring placing portion; a first electrode and a second electrode both disposed inside the focus ring placing portion; a DC power source configured to apply a first DC voltage to the first electrode and apply a second DC voltage to the second electrode; and a controller configured to control the DC power source such that respective polarities of the first DC voltage and the second DC voltage are independently and periodically switched.

A microwave plasma device includes a treatment space and a number of two or more microwave semiconductors. The microwave semiconductors are attached to the treatment space in such a way that the microwaves of a microwave semiconductor only interfere with the microwaves of other microwave semiconductors when in the treatment space.

The disclosure provides a plasma source and an excitation system for excitation of a plasma, and an optical monitoring system. In one embodiment the plasma source includes: (1) a coaxial resonant cavity body having an inner length, and including a first end, a second end, an inner electrode and an outer electrode, (2) a radio frequency signal interface electrically coupled to the inner and outer electrodes at a fixed position along the inner length and configured to provide a radio frequency signal to the coaxial resonant cavity body, (3) a window positioned at the first end of the coaxial resonant cavity body, and (4) a mounting flange positioned proximate the window at the first end of the coaxial resonant cavity body and defining a plasma cavity, wherein the window forms one side of the plasma cavity and isolates the coaxial resonant cavity body from plasma in the plasma cavity.

A microwave energy source that generates a microwave energy is disclosed. The microwave energy source has an on-state and an off-state. A control circuit is coupled to the microwave energy source and includes an output to generate a control signal that adjusts a pulse frequency of the microwave energy. A voltage generator applies a non-zero voltage to the microwave energy source during the off-state. A frequency and a duty cycle of the non-zero voltage is based on a frequency and a duty cycle of the control signal. A waveguide is coupled to the microwave energy source. The waveguide has a supply gas inlet that receives a supply gas, a reaction zone that generates a plasma, a process inlet that injects a raw material into the reaction zone, and an outlet that outputs a powder based on a mixture of the supply gas and the raw material within the plasma.

Methods and apparatus provide plasma generation for semiconductor process chambers. In some embodiments, the plasma is generated by a system that may comprise a process chamber having at least two upper microwave cavities separated from a lower microwave cavity by a metallic plate with a plurality of radiation slots, at least one microwave input port connected to a first one of the at least two upper microwave cavities, at least two microwave input ports connected to a second one of the at least two upper microwave cavities, and the lower microwave cavity receives radiation through the plurality of radiation slots in the metallic plate from both of the at least two upper microwave cavities, the lower microwave cavity is configured to form an electric field that provides uniform plasma distribution in a process volume of the process chamber.

A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface.