A system of inspecting a focus ring is provided. The system includes a measuring device, a transfer device and an operation unit. The measuring device includes a base substrate, a sensor chip and a circuit board. The sensor chip has a sensor electrode and is provided along an edge of the base substrate. The circuit board is configured to output a high frequency signal to the sensor electrode and acquire a digital value indicating electrostatic capacitance based on a voltage amplitude in the sensor electrode. The transfer device is configured to scan the measuring device. The operation unit is configured to obtain difference values by performing a difference operation with respect to the digital values acquired by the measuring device at multiple positions along a direction which intersects with an inner periphery of the focus ring.

A plasma applicator includes a plasma discharge tube and a microwave cavity at least partially surrounding a portion of the plasma discharge tube. Microwave energy is coupled to the microwave cavity via a coupling iris. At least two orthogonal dimensions of the microwave cavity are selected such that the microwave energy in the microwave cavity propagates in a transverse electric (TE) mode. Primary electric fields generated from the microwave energy combine with an evanescent electric field generated from the coupling iris, such that a combined electric field in the microwave cavity is substantially uniform along the longitudinal axis of the plasma discharge tube. A plurality of radial microwave chokes is disposed over an exterior of the plasma discharge tube. Positions of the microwave chokes are such that microwave energy propagating in the TE mode and a transverse electric magnetic (TEM) mode is attenuated.

A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.

Disclosed is a plasma processing apparatus including: a processing container that defines a processing space; a microwave generator that generates microwaves for plasma excitation; a dielectric having a facing surface that faces the processing space; a slot plate provided on a surface of the dielectric opposite to the facing surface and formed with a plurality of slots that radiate the microwaves to the processing space through the dielectric; and a conductor pattern that is provided on the facing surface of the dielectric and converges an electric field corresponding to the microwaves radiated from each of the slots.

A rotating microwave is established for any resonant mode TE.sub.mnl or TM.sub.mnl of a cavity, where the user is free to choose the values of the mode indices m, n and l. The fast rotation, the rotation frequency of which is equal to an operational microwave frequency, is accomplished by setting the temporal phase difference ΔØ and the azimuthal angle Δθ between two microwave input ports P and Q as functions of m, n and l. The slow rotation of frequency Ω.sub.a (typically 1-1000 Hz), is established by transforming dual field inputs α cos Ω.sub.at and ±α sin Ω.sub.at in the orthogonal input system into an oblique system defined by the angle Δθ between two microwave ports P and Q.

An apparatus for direct analysis is based on solid ablation by a plasma jet. It includes a microwave plasma system, a gas transmission system, a sample carrying system, a signal collection system and a data analysis system. In the microwave plasma system both the microwave resonant cavity and the discharge tube are connected to the microwave power source. The gas transmission system is connected to the discharge tube; the sample carrying system is located below a gas outlet of the discharge tube. The signal collection system is configured to collect a spectral signal of a sample to be tested, and is connected to the data analysis system.

Provided is a support unit included in an apparatus for treating a substrate using plasma and configured to support the substrate. The support unit may include a power supply rod connected to a high-frequency power supply; an electrode plate configured to receive power from the power supply rod; and a ground ring provided to surround the electrode plate when viewed from the top and including a ground ring to be grounded.

Disclosed is a multi-port phase compensation nested apparatus for microwave-plasma deposition of diamond films. A resonant cavity part includes an inner cavity body, a ring waveguide, a slot opening, a quartz ring, a metal platform, a deposition platform, a substrate, and a recess, wherein the slot opening is located on a wall of the inner cavity body, communicating the inner cavity body with the ring waveguide.

Provided is a spinning disc with plasma discharges for the treatment of liquid. In one configuration, plasma is introduced to the surface of a liquid by a point-plane discharge, dielectric barrier discharge or as a plasma jet. This liquid exists as a thin film on the surface of the spinning disc. The thin liquid layer, as well as the enhanced mixing provided by the spinning disc, allow the plasma generated radicals to more easily interact with the contaminant.

Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.