Embodiments include a modular microwave source. In an embodiment, the modular microwave source comprises a voltage control circuit, a voltage controlled oscillator, where an output voltage from the voltage control circuit drives oscillation in the voltage controlled oscillator. The modular microwave source may also include a solid state microwave amplification module coupled to the voltage controlled oscillator. In an embodiment, the solid state microwave amplification module amplifies an output from the voltage controlled oscillator. The modular microwave source may also include an applicator coupled to the solid state microwave amplification module, where the applicator is a dielectric resonator.

A substrate processing device capable of preventing deformation of a substrate during a process includes a substrate supporting unit having a contact surface that comes into contact with an edge of a substrate to be processed, wherein the substrate supporting unit includes a protruding (e.g. embossed) structure protruding from a base to support deformation from the inside of the edge of the substrate to be processed.

Disclosed is a plasma processing apparatus including: a processing container that defines a processing space; a microwave generator that generates microwaves for plasma excitation; a dielectric having a facing surface that faces the processing space; a slot plate provided on a surface of the dielectric opposite to the facing surface and formed with a plurality of slots that radiate the microwaves to the processing space through the dielectric; and a conductor pattern that is provided on the facing surface of the dielectric and converges an electric field corresponding to the microwaves radiated from each of the slots.

A device includes a microwave generation unit that averages the first measured values and the second measured values at a predetermined movement average time and a predetermined sampling interval, and controls the microwave such that a value obtained by subtracting the averaged second measured value from the averaged first measured value comes close to the setting power, and in which the predetermined movement average time is 60 s or less, and a relationship of y78.178x.sup.0.1775 is satisfied when the predetermined sampling interval is indicated by x, and the predetermined movement average time is indicated by y.

A method of plasma processing includes generating plasma by coupling a source power pulse to a plasma processing chamber containing a substrate holder configured to support a substrate. The plasma includes first ions having a first mass and second ions having a second mass greater than the first mass. The ion density ratio of the second ions to the first ions is a first ratio. The method further includes delivering an energetic ion flux of second ions to the substrate by applying a delayed bias power pulse to the substrate holder after a delay between the source power pulse and the delayed bias power pulse. The delay is chosen based on the diffusion time constants of the first ions and the second ions so that the ion density ratio of the second ions to the first ions is a second ratio that is greater than the first ratio.

A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode.

A plasma reactor has a cylindrical microwave cavity overlying a workpiece processing chamber, a microwave source having a pair of microwave source outputs, and a pair of respective waveguides. The cavity has first and second input ports in a sidewall and space apart by an azimuthal angle. Each of the waveguides has a microwave input end coupled to a microwave source output and a microwave output end coupled to a respective one of the first and second input ports, a coupling aperture plate at the output end with a rectangular coupling aperture in the coupling aperture plate, and an iris plate between the coupling aperture plate and the microwave input end with a rectangular iris opening in the iris plate.

A microwave coupling/combining device for coupling and combining at least two microwave sources includes a waveguide provided with a sleeve extending longitudinally along a main axis and having two opposing ends having a first end provided with an element forming a short-circuit and a second open end. The device further includes at least one transverse bar extending inside the sleeve along a transverse axis orthogonal to the main axis; and at least two coaxial connectors provided for being connected respectively to microwave sources. Each coaxial connector is mounted externally on the sleeve and has a central conductive core connected to and extended by a conductive antenna extending in a direction orthogonal to the transverse axis and to the main axis inside the sleeve and ending by an end attached to a transverse bar.

A rotating microwave is established for any resonant mode TE.sub.mnl or TM.sub.mnl of a cavity, where the user is free to choose the values of the mode indices m, n and l. The fast rotation, the rotation frequency of which is equal to an operational microwave frequency, is accomplished by setting the temporal phase difference ?? and the azimuthal angle ?? between two microwave input ports P and Q as functions of m, n and l. The slow rotation of frequency ?.sub.a (typically 1-1000 Hz), is established by transforming dual field inputs ? cos ?.sub.at and ?? sin ?.sub.at in the orthogonal input system into an oblique system defined by the angle ?? between two microwave ports P and Q.

Methods and reactors are disclosed for producing synthetic material on a substrate by microwave plasma activated chemical vapor deposition. The method comprises the step of providing a microwave plasma reactor configured to provide a plasma having a toroidal shape. The reactor comprises a resonant cavity and a substrate holder arranged to hold, preferably, an annular shaped substrate or a plurality of substrates arranged in an annular configuration.