A plasma processing apparatus includes a chamber, a microwave source, and a distributor. The chamber is configured to place a substrate therein and includes a plurality of radiation units that radiate microwaves, which are arranged while facing the substrate. The microwave source outputs microwaves. The distributor has one end connected to the microwave source, and the other end branched and connected to the plurality of radiation units, and distributes and transmits the microwaves output from the microwave source to the plurality of radiation units, in which when a wavelength of the microwaves is ?, a line length from the one end to the other end falls within a predetermined range beginning from n??/2 (n is a natural number).

A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode.

The present invention relates to a device for plasma generation in a wide pressure range. The device comprises a first plasma source (1) in a first discharge chamber (2) in order to generate a first plasma in a low-pressure range, a second plasma source (3) in a second discharge chamber (4) in order to generate a second plasma in a high-pressure range, a first coupling element (5) for coupling the device to a system, in order to guide gas out of the system, and a second coupling element (6) for coupling the device to an optical sensor (12). The first discharge chamber (2) has a first optical connection with at least one optical lens (7, 8) to the second coupling element (6) and the second discharge chamber (4) has a second optical connection with at least one optical lens (8) to the second coupling element (6). This invention further relates to a system for optical gas analysis or gas detection and corresponding methods for plasma generation and for operating the system.

A rotating microwave is established for any resonant mode TE.sub.mnl or TM.sub.mnl of a cavity, where the user is free to choose the values of the mode indices m, n and l. The fast rotation, the rotation frequency of which is equal to an operational microwave frequency, is accomplished by setting the temporal phase difference ?? and the azimuthal angle ?? between two microwave input ports P and Q as functions of m, n and l. The slow rotation of frequency ?.sub.? (typically 1-1000 Hz), is established by transforming dual field inputs ? cos ?.sub.?t and ?? sin ?.sub.?t in the orthogonal input system into an oblique system defined by the angle ?? between two microwave ports P and Q.

A microwave plasma source for forming a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, which includes: a microwave output part for outputting the microwave; a microwave transmission part for transmitting the microwave; and a microwave radiation member for radiating the microwave into the chamber. The microwave transmission part includes a plurality of microwave introduction mechanisms circumferentially arranged in a peripheral portion of the microwave radiation member and configured to introduce the microwave into the microwave radiation member. The microwave radiation member includes a metal main body, a plurality of dielectric slow-wave members arranged in an overall annular shape in the vicinity of an arrangement surface of the main body, an annular dielectric microwave transmission member arranged in a microwave radiation surface of the main body, and a slot antenna part installed between the slow-wave members and the microwave transmission member.

Systems and methods of forming a thin film on substrate includes positioning the substrate in a chamber; generating, via a uniform microwave field generator, a microwave field around the substrate; and guiding radicals into the chamber so that plasma is generated about the substrate to form the thin film on the substrate.

Embodiments disclosed herein include a housing for a source array. In an embodiment, the housing comprises a conductive body, where the conductive body comprises a first surface and a second surface opposite from the first surface. In an embodiment a plurality of openings are formed through the conductive body and a channel is disposed into the second surface of the conductive body. In an embodiment, a cover is over the channel, and the cover comprises first holes that pass through a thickness of the cover. In an embodiment, the housing further comprises a second hole through a thickness of the conductive body. In an embodiment, the second hole intersects with the channel.

A plasma reactor has a cylindrical microwave cavity overlying a workpiece processing chamber, a microwave source having a pair of microwave source outputs, and a pair of respective waveguides. The cavity has first and second input ports in a sidewall and space apart by an azimuthal angle. Each of the waveguides has a microwave input end coupled to a microwave source output and a microwave output end coupled to a respective one of the first and second input ports, a coupling aperture plate at the output end with a rectangular coupling aperture in the coupling aperture plate, and an iris plate between the coupling aperture plate and the microwave input end with a rectangular iris opening in the iris plate.

A device is provided for generating plasma by microwaves for CVD coating a substrate having a vacuum container into which a reaction gas can be fed and an electrical conductor arranged therein which is connected on each of both ends thereof to a device for coupling microwaves and to a voltage source with which a difference of potential can generated between the electrical conductor and the surrounding vacuum container. The electrical conductor is electrically insulated from the devices for coupling microwaves. The electrical conductor has a rod-shaped design or a curved run. The electrical conductor is connected to the voltage source via a feedthrough filter. The device for coupling microwaves expands in a funnel shape toward the electrical conductor and is partially or completely filled by a dielectric material. The device for coupling microwaves has groove-shaped recesses running along a circumference.

The present invention relates to a dual-station vacuum processor that pumps uniformly, comprising two vacuum processing chambers that may act as a process processing chamber, and an offset-pumping port and a vacuum pump which are common to and communicate with the two vacuum processing chambers, wherein a damper having a set thickness in a vertical direction is provided in a region proximal to the offset-pumping port in each vacuum processing chamber, so as to lower a pumping rate of gas at the pumping port proximal end and balance the pumping rate with the pumping rate of the gas at the pumping port distal end, thereby ameliorating the impact of chamber offset on the uniformity process processing. The present invention may further provide, in a rib as the damper, a channel in communication with the atmospheric environment outside of the chamber, so as to facilitate connection between a cable pipeline in the chamber and the outside.