A support apparatus for plasma adjustment includes a storage part storing index value estimation data including data defining an amount of change in an index value between adjustment positions for each of the adjustment parts, the index value corresponding to electron density of plasma, an input part for inputting a measurement result of the index value obtained when plasma is generated and the adjustment positions of the adjustment parts, and a data processing part configured to estimate the index value for each of adjustment positions of the adjustment parts based on input items input to the input part and the estimation data and configured to select proper combinations of the adjustment positions of the adjustment parts based on combinations of the adjustment positions of the adjustment parts and estimated values of a plurality of index values in the circumferential direction corresponding to the respective combinations.

Embodiments disclosed herein include a source for a processing tool. In an embodiment, the source comprises a dielectric plate having a first surface and a second surface opposite from the first surface, and a cavity into the first surface of the dielectric plate. In an embodiment, the cavity comprises a third surface that is between the first surface and the second surface. In an embodiment, the source further comprises a dielectric resonator extending away from the third surface.

Disclosed is a plasma processing apparatus 10 including a chamber 11, a stage 12, a dielectric member 13, a cover 14, a gas introduction path 15, and an induction coil 16. The induction coil 16 includes a first induction coil 17 installed so as to overlap a central region R1 of the dielectric member 13, and a second induction coil 18 installed so as to overlap a peripheral region R2 outside the central region R1 of the dielectric member 13. The cover 14 has a first gas hole 14c formed at a position overlapping the central region R1 and a second gas hole 14d formed at a position overlapping the peripheral region R2. The gas introduction path 15 has a first gas introduction path 15a communicating with the first gas hole 14c and a second gas introduction path 15b communicating with the second gas hole 14d.

Methods and systems include supplying pulsed microwave radiation through a waveguide, where the microwave radiation propagates in a direction along the waveguide. A pressure within the waveguide is at least 0.1 atmosphere. A supply gas is provided at a first location along a length of the waveguide, a majority of the supply gas flowing in the direction of the microwave radiation propagation. A plasma is generated in the supply gas, and a process gas is added into the waveguide at a second location downstream from the first location. A majority of the process gas flows in the direction of the microwave propagation at a rate greater than 5 slm. An average energy of the plasma is controlled to convert the process gas into separated components, by controlling at least one of a pulsing frequency of the pulsed microwave radiation, and a duty cycle of the pulsed microwave radiation.

Disclosed is a plasma processing method including: growing a polycrystalline silicon layer on a processing target base body; and exposing the polycrystalline silicon layer to hydrogen radicals by supplying a processing gas containing hydrogen into a processing container that accommodates the processing target base body including the polycrystalline silicon layer grown thereon and radiating microwaves within the processing container to generate the hydrogen radicals.

Examples of the present technology include semiconductor processing methods that may include generating a plasma from a deposition precursor in a processing region of a semiconductor processing chamber. The plasma may be generated at a delivered power within a first period of time when plasma power is delivered from a power source operating at a first duty cycle. The methods may further include transitioning the power source from the first duty cycle to a second duty cycle after the first period of time. A layer may be deposited on a substrate in the processing region of the semiconductor processing chamber from the generated plasma. The layer, as deposited, may be characterized by a thickness of 50 Å or less. Exemplary deposition precursors may include one or more silicon-containing precursors, and an exemplary layer deposited on the substrate may include an amorphous silicon layer.

There is provided a plasma processing apparatus including a microwave output part configured to generate microwaves and to distribute and output the microwaves to a plurality of paths, a microwave transmission part configured to transmit the microwaves outputted from the microwave output part into a process container via a plurality of transmission paths, and a control part configured to control the microwaves. The control part is configured to control the microwaves such that the phases of microwaves become different from each other when the microwaves transmitted via the transmission paths are introduced from a microwave transmitting plate for common use into the process container.

There is provided a plasma processing apparatus including a microwave introduction part configured to radiate microwaves transmitted by a microwave transmission part inside a process container. The microwave introduction part includes a conductive member constituting a ceiling portion of the process container and having a recess formed to face the mounting surface, a plurality of slots forming a part of the conductive member and configured to radiate the microwaves transmitted via the microwave transmission part, and a microwave transmitting member fitted to the recess of the conductive member and configured to transmit and introduce the microwaves radiated from the plurality of slots into the process container. The microwave transmitting member is provided to be shared with the microwaves transmitted via transmission paths and includes an interference suppressing part configured to suppress interference of the microwaves in the microwave transmitting member.

Microwave plasma slowing system for a plasma shutter comprises a waveguide-band transmission for interconnection of the system with a generator, and for letting waves from the generator into the plasma shutter, a bridge band interconnected with the waveguide-band transmission, two parallel band waistlines, interconnected by its one end with the bridge band, where the band waistlines are flat plates, where one of its sides is provided with tenons arranged side by side along the axis of the band waistlines with orientation in a such way, that the tenons arranged on the one side of the first band waistline placed in turns between the tenons arranged on the one side of the second band waistline, where the band waistlines are provided at the other end by mutually separated lockable electromagnetic oscillators.

An apparatus for direct analysis is based on solid ablation by a plasma jet. It includes a microwave plasma system, a gas transmission system, a sample carrying system, a signal collection system and a data analysis system. In the microwave plasma system both the microwave resonant cavity and the discharge tube are connected to the microwave power source. The gas transmission system is connected to the discharge tube; the sample carrying system is located below a gas outlet of the discharge tube. The signal collection system is configured to collect a spectral signal of a sample to be tested, and is connected to the data analysis system.