A controller of a plasma processing apparatus stores a frequency spectrum related to a first timing into a storage unit, controls a microwave generator to generate a microwave in correspondence to a setting frequency, setting power, and a setting bandwidth at a second timing, controls a demodulator to measure travelling wave power and reflected wave power of the microwave for each frequency, calculates the frequency spectrum related to the second timing on the basis of a measurement result from the demodulator, calculates a correction value for correcting a waveform of the travelling wave power for each frequency such that a difference for each frequency between the frequency spectrum related to the second timing and the frequency spectrum related to the first timing, stored in the storage unit, is small, and controls the microwave generator on the basis of the calculated correction value for each frequency.

A plasma processing apparatus comprises a processing chamber, a gas supply unit, a power supply unit and a frequency control unit. The processing chamber accommodates a target object. The gas supply unit supplies a processing gas into the processing chamber. The power supply unit supplies a power of a predetermined frequency band into the processing chamber to generate plasma of the processing gas in the processing chamber. The frequency control unit sweeps a frequency of the power supplied into the processing chamber by the power supply unit from a first frequency to a second frequency at the time of generating the plasma of the processing gas in the processing chamber.

A plasma processing apparatus adapted to reduce non-uniformity of plasma distribution in a process chamber and to adjust the plasma distribution to “centrally high density”, “circumferentially high density”, or “uniform density” in accordance with a desired etching process, a process chamber; a radio frequency power source; a rectangular waveguide; and a circular waveguide connected to the rectangular waveguide, in which the rectangular waveguide includes an upper rectangular waveguide and a lower rectangular waveguide formed by vertically dividing the rectangular waveguide; and a cutoff section which cuts off the microwave frequency power and which has a dielectric body. The circular waveguide includes an inner waveguide connected to the upper rectangular waveguide and formed inside; and an outer waveguide connected to the lower rectangular waveguide and formed on an outer side of the inner waveguide. The cutoff section has a width narrower than those of the rectangular waveguides except the cutoff section.

Microwave plasma slowing system for a plasma shutter comprises a waveguide-band transmission for interconnection of the system with a generator, and for letting waves from the generator into the plasma shutter, a bridge band interconnected with the waveguide-band transmission, two parallel band waistlines, interconnected by its one end with the bridge band, where the band waistlines are flat plates, where one of its sides is provided with tenons arranged side by side along the axis of the band waistlines with orientation in a such way, that the tenons arranged on the one side of the first band waistline placed in turns between the tenons arranged on the one side of the second band waistline, where the band waistlines are provided at the other end by mutually separated lockable electromagnetic oscillators.

This disclosure relates to a surface processing apparatus for use in the surface processing of a substrate. The surface processing apparatus comprises a plasma source including a wall defining a plasma chamber and an excitation source adjacent the wall and a processing chamber in which a substrate having a predetermined maximum lateral dimension is mounted in use, the processing chamber being operatively connected to the plasma source. A transmission plate for the transmission of plasma in use is arranged between the plasma source and processing chamber, the transmission plate comprising a plurality of apertures. The apertures follow a non-rectilinear path through the transmission plate such that there is no line of sight in use between a substrate with the predetermined maximum lateral dimension mounted in the processing chamber and the most intense region of the plasma in the plasma chamber.

A microwave supply mechanism for supplying microwaves from a microwave-generating power supply part to a load, includes: a microwave transmission path having a coaxial structure and through which the microwaves from the microwave-generating power supply part are transmitted; an antenna provided at a tip of the microwave transmission path and configured to radiate the microwaves and supply the microwaves to the load; an impedance matching part provided in the microwave transmission path and configured to match impedance on a power supply side and impedance on a load side; and an output voltage adjustment part provided between the impedance matching part and the antenna and configured to adjust a microwave output voltage in the antenna by adjusting impedance.

In one example, a plasma processing system includes a vacuum system, a plasma processing chamber including a chamber cavity coupled to the vacuum system, a substrate holder including a surface disposed inside the chamber cavity, a radio frequency (RF) source electrode coupled to an RF power source, the RF source electrode configured to ignite plasma in the chamber cavity. The system includes a microwave source coupled to a microwave oscillator, and a conductive spatial uniformity component including a plurality of through openings, where the conductive spatial uniformity component includes a major surface electromagnetically coupled to the microwave source, the major surface configured to couple microwave power to the plasma in the chamber cavity.

A plasma processing system includes a vacuum system, a plasma processing chamber including a chamber cavity coupled to the vacuum system, a substrate holder including a surface inside the chamber cavity, a radio frequency (RF) source electrode coupled to an RF power source, the RF source electrode configured to ignite plasma in the chamber cavity. The system includes microwave source coupled to a microwave oscillator, and an electromagnetic (EM) metasurface, where the EM metasurface having a major surface electromagnetically coupled to the microwave source, the major surface configured to couple microwave power to the plasma in the chamber cavity.

A microwave system for use within a microwave-assisted thermal atomic layer deposition system is disclosed which include at least one microwave generator configured to output at least one microwave signal, at least one waveguide assembly in communication with the at least one microwave generator and configured to receive the microwave signal, one or more isolators positioned within the waveguide assembly and configured to reduce or eliminate backscatter of the microwave signal from the waveguide assembly to the at least one microwave generator, at least one tuning device in positioned within the waveguide assembly and configured receive the microwave signal from the isolator and tune the microwave signal, and at least one microwave delivery device in communication with the waveguide assembly and configured to direct at least a portion of the microwave signal into at least one processing chamber of the microwave-assisted thermal atomic layer deposition system.

The invention provides a system for growth of one or more crystalline materials, specifically diamonds. The system comprises a microwave generator integrated with a pressure controller and an Optical Emission Spectrometer (OES) to form an Integrated Microwave Generator System (IMGS). The OES provides a real-time feedback loop to an IMGS controller based on microwave plasma input from a microwave plasma reactor, to control one or more parameters (power, pressure, power density, and pulsed power) in a closed loop and maintain required proposition of plasma constituents for the growth of diamonds in the microwave plasma reactor. The OES monitors real-time concentration of plasma constituents just above the growing surface of diamonds and feeds the real-time information to the IMGS controller to automatically adjust power density to maintain the concentration of plasma constituents on the growing surface of diamonds.