H01J37/32293

ECR ion source and method for operating an ECR ion source
11094510 · 2021-08-17 · ·

An ECR (Electron Cyclotron Resonance) ion source includes a plasma chamber having a circular cylindrical cross-section, magnets for generating a magnetic field for confinement of the plasma in the plasma chamber, and a microwave generator disposed outside the plasma chamber and generating at least two microwave signals. Several antennas protrude radially into the plasma chamber with a predetermined angular offset α. The antennas receive phase-shifted microwave signals from the microwave generator and radiate linearly polarized microwaves, which in turn produce a circularly polarized microwave inside the plasma chamber. A method for operating an ECR ion source is also described.

Plasma processing apparatus and plasma processing method
10971336 · 2021-04-06 · ·

A plasma processing apparatus includes a processing vessel; a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered around a predetermined center frequency; and a plasma generating unit configured to generate plasma within the processing vessel by using the carrier wave group.

Microwave output device and plasma processing apparatus
10971337 · 2021-04-06 · ·

A device includes a microwave generation unit that generates a microwave having a bandwidth, an output unit, a directional coupler, and a measurement unit. The microwave generation unit generates a microwave of which power is pulse-modulated to have a high level and a low level. The measurement unit determines a first high measured value and a first low measured value respectively indicating a high level and a low level of power of travelling waves in the output unit on the basis of parts of the travelling waves output from the directional coupler. The microwave generation unit controls high level power of the pulse-modulated microwave on the basis of and averaged first high measured value and high level setting power, and controls low level power of the pulse-modulated microwave on the basis of an averaged first low measured value and low level setting power.

RF Power Source Operation In Plasma Enhanced Processes

Methods of depositing a film using a plasma enhanced process are described. The method comprises providing continuous power from a power source connected to a microwave plasma source in a process chamber and a dummy load, the continuous power split into pulses having a first time and a second time defining a duty cycle of a pulse. The continuous power is directed to the microwave plasma source during the first time, and the continuous power is directed to the dummy load during the second time.

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
20210082727 · 2021-03-18 ·

A plasma processing apparatus includes: a processing container; a substrate holder disposed within the processing container and configured to hold a substrate thereon; a dielectric window disposed below the substrate holder; and a plurality of phased array antennas disposed below the dielectric window and configured to irradiate a plurality of electromagnetic waves.

SYSTEM AND METHOD OF POWER GENERATION WITH PHASE LINKED SOLID-STATE GENERATOR MODULES
20200381218 · 2020-12-03 · ·

A method of generating power with a power generation system. Solid state generators generate a plurality of outputs. The outputs of the solid state generator modules are combined from a plurality of channels, in a combiner, using a phase optimization technique to generate an in phase combined output power.

SYSTEM AND METHOD OF POWER GENERATION WITH PHASE LINKED SOLID-STATE GENERATOR MODULES

A plasma generation system includes a reference clock, a plurality of solid state generator modules, and a processing chamber. The reference clock is configured to generate a reference signal. Each solid state generator module is linked to an electronic switch and each electronic switch is linked to the reference clock. The solid state generator modules are each configured to generate an output based on the reference signal from the reference clock. The processing chamber is configured to receive the output of at least two of the solid state generator modules to combine the outputs of said solid state generator modules therein.

ELECTRIC FIELD SENSOR, SURFACE WAVE PLASMA SOURCE, AND SURFACE WAVE PLASMA PROCESSING APPARATUS
20200365371 · 2020-11-19 ·

An electric field sensor includes a probe, a cylindrical probe guide, an insulating member, a preload spring and a connector. The probe serves as an inner conductor of a coaxial transmission path and has a portion forming a monopole antenna at a tip end to be in constant contact with a microwave transmission window by a pressing force of a built-in spring thereof. The probe guide is disposed at an outer side of the probe and serves as an outer conductor of the coaxial transmission path. The insulating member is disposed between the probe and the probe guide. The preload spring preloads the probe guide downward and presses the probe guide so that the tip end of the probe guide comes in constant contact with the planar slot antenna. The connector is connected to the probe and the probe guide to connect coaxial signal cables for extracting signals.

ECR ION SOURCE AND METHOD FOR OPERATING AN ECR ION SOURCE
20200357614 · 2020-11-12 · ·

An ECR (Electron Cyclotron Resonance) ion source includes a plasma chamber having a circular cylindrical cross-section, magnets for generating a magnetic field for confinement of the plasma in the plasma chamber, and a microwave generator disposed outside the plasma chamber and generating at least two microwave signals. Several antennas protrude radially into the plasma chamber with a predetermined angular offset . The antennas receive phase-shifted microwave signals from the microwave generator and radiate linearly polarized microwaves, which in turn produce a circularly polarized microwave inside the plasma chamber. A method for operating an ECR ion source is also described.

PLASMA PROCESSING APPARATUS
20240014007 · 2024-01-11 ·

A plasma processing apparatus includes: a processing chamber; a first radio frequency power supply configured to supply a first radio frequency power; a second radio frequency power supply configured to supply a second radio frequency power; and a control device configured to, when the first radio frequency power is modulated by a first waveform having a first period and a second period adjacent to the first period, and the second radio frequency power supply is modulated by a second waveform having a period A and a period B, control the second radio frequency power supply such that each second radio frequency power in the period A is supplied in the first period and the second period, in which an amplitude in the second period is smaller than an amplitude in the first period, and an amplitude in the period A is larger than an amplitude in the period B.