A plasma processing apparatus includes a processing vessel; a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered around a predetermined center frequency; and a plasma generating unit configured to generate plasma within the processing vessel by using the carrier wave group.

A device includes a microwave generation unit that generates a microwave having a bandwidth, an output unit, a directional coupler, and a measurement unit. The microwave generation unit generates a microwave of which power is pulse-modulated to have a high level and a low level. The measurement unit determines a first high measured value and a first low measured value respectively indicating a high level and a low level of power of travelling waves in the output unit on the basis of parts of the travelling waves output from the directional coupler. The microwave generation unit controls high level power of the pulse-modulated microwave on the basis of and averaged first high measured value and high level setting power, and controls low level power of the pulse-modulated microwave on the basis of an averaged first low measured value and low level setting power.

An artificial diamond plasma production device has a reaction chamber, a microwave emitting module, and a microwave lens. The microwave emitting module emits a circularly-polarized microwave into the reaction chamber. The microwave emitting module has a polarizing tube, a directing tube, a first waveguide, and a first linearly-polarized microwave source serially connected along a microwave traveling path. The microwave emitting module further has a second waveguide and a first matched load. The polarizing tube is configured to convert a linearly-polarized microwave into a circularly-polarized microwave or the other way round depending on traveling direction of the microwave. The directing tube has a first opening and a second opening which face toward different directions. The first waveguide is connected to the first opening. The first matched load is connected to the second opening via the second waveguide. Therefore, reflected microwave can be channeled out of the reaction chamber.

A plasma processing apparatus includes: a processing container; a resonator configured to resonate electromagnetic waves to be supplied; a slot antenna connected to the resonator; and a transmission window configured to transmit the electromagnetic waves radiated from the slot antenna and supply the electromagnetic waves into the processing container, wherein the resonator includes: an input port including an inner shaft and an outer cylinder; an output port including an inner shaft and an outer cylinder; a power supply fin connecting the inner shaft of the input port and the inner shaft of the output port and provided in the resonator; and a ground fin connected to the outer cylinder of the input port and the outer cylinder of the output port at a same potential and provided to protrude within the resonator so as to be inserted between fins of the power supply fin.

Described herein is a technology related to a method for utilizing a dual-frequency surface wave plasma sources to provide stable ionizations on a plasma processing system. Particularly, the dual-frequency surface wave plasma sources may include a primary surface wave power plasma source and a secondary power plasma source, which is provided on each recess of a plurality of recesses. The secondary power plasma source, for example, may provide the stable ionization on the plasma processing system.

Described herein is a technology related to a method for utilizing a dual-frequency surface wave plasma sources to provide stable ionizations on a plasma processing system. Particularly, the dual-frequency surface wave plasma sources may include a primary surface wave power plasma source and a secondary power plasma source, which is provided on each recess of a plurality of recesses. The secondary power plasma source, for example, may provide the stable ionization on the plasma processing system.

A film forming device includes: a microwave supplying unit configured to supply microwaves for generating plasma along a treatment surface of a conductive workpiece; a negative voltage applying unit configured to apply to the workpiece a negative bias voltage for expanding a sheath layer thickness along the treatment surface of the workpiece, and a controller configured to control the microwave supplying unit and the negative voltage applying unit, wherein the microwave supplying unit has a microwave transmitting window configured to propagate the supplied microwaves to the expanded sheath layer, wherein the controller is configured to control the microwave supplying unit and the negative voltage applying unit while supplying of the microwaves so that a sheath thickness of the sheath layer changes.

A plasma processing apparatus includes a processing vessel; a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered around a predetermined center frequency; and a plasma generating unit configured to generate plasma within the processing vessel by using the carrier wave group.

A plasma processing apparatus including a processing vessel 10 in which a plasma process is performed and a plasma generation antenna 20 having a shower plate 100 which supplies a first gas and a second gas into the processing vessel 10, performs the plasma process on a substrate with plasma generated by a surface wave formed on a surface of the shower plate 100 through a supply of a microwave. The shower plate 100 has multiple gas holes 133 configured to supply the first gas into the processing vessel 10 and multiple supply nozzles 160 configured to supply the second gas into the processing vessel 10, and the supply nozzles 160 are protruded vertically downwards from a bottom surface of the shower plate 100 and are provided at different positions from the gas holes 133.

A rotating microwave is established for any resonant mode TE.sub.mnl or TM.sub.mnl of a cavity, where the user is free to choose the values of the mode indices m, n and 1. The fast rotation, the rotation frequency of which is equal to an operational microwave frequency, is accomplished by setting the temporal phase difference and the azimuthal angle between two microwave input ports P and Q as functions of m, n and 1. The slow rotation of frequency .sub. (typically 1-1000 Hz), is established by transforming dual field inputs cos .sub.t and sin .sub.t in the orthogonal input system into an oblique system defined by the angle between two microwave ports P and Q.