Embodiments include a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source includes a plurality of high-frequency emission modules, where each high-frequency emission module comprises and oscillator module, an amplification module, and an applicator. In an embodiment the oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, each high-frequency emission module includes a different oscillator module.

Apparatus for plasma synthesis of carbon nanotubes, comprising: a plasma nozzle coupled to a reaction tube or chamber; means for supplying a process gas to the plasma nozzle, the process gas comprising a carbon-containing species; means for supplying radio frequency radiation to the process gas within the plasma nozzle, so as to sustain a plasma within the nozzle in use, and thereby cause cracking of the carbon-containing species; and means for providing a catalyst; wherein the plasma nozzle is arranged such that an afterglow of the plasma extends into the reaction tube/chamber, the cracked carbon-containing species also pass into the reaction tube/chamber, and the cracked carbon-containing species recombine within the afterglow, so as to form carbon nanotubes in the presence of the catalyst. A method of plasma-synthesising carbon nanotubes is also provided.

A microwave plasma source that generates a microwave plasma in a processing space in which a target substrate is processed, includes: a microwave generation part for generating microwave; a waveguide through which the microwave generated by the microwave generation part propagates; an antenna part including a slot antenna having a predetermined pattern of slots formed therein and being configured to radiate the microwave propagating through the waveguide into the processing space and a microwave-transmitting plate being made of a dielectric material and being configured to transmit the microwave radiated from the slots therethrough and supply the microwave into the processing space; a temperature detector for detecting a temperature at a predetermined position in a microwave propagation path leading to the slot antenna; and an abnormality detection part for receiving the temperature detected by the temperature detector and detect an abnormality in the microwave propagation path based on the detected temperature.

What is provided here are: a radiation element provided at one of walls of a heating chamber, for radiating a microwave into the heating chamber; at least one hollow dielectric member in which a gas is sealed, the hollow dielectric member having electrodes at both end portions thereof; and a control unit having a plasma control unit for controlling the state of the hollow dielectric member and a current adjustment unit for adjusting a current to be applied to the electrodes of the hollow dielectric member, under the control of the plasma control unit, the current adjustment unit being connected to the electrodes; wherein the at least one hollow dielectric member is provided along one of the walls which is other than the wall at which the radiation element is provided; and wherein the plasma control unit controls the state of the hollow dielectric member so that it is put into one of states of: a plasma state in which the microwave is reflected by the gas; a plasma state in which the microwave is absorbed by the gas; and a gas state in which the microwave is allowed to be transmitted through the gas.

A graphene structure forming method for forming a graphene structure is provided. The method comprises preparing a target substrate, and forming the graphene structure on a surface of the target substrate by remote microwave plasma CVD using a carbon-containing gas as a film-forming raw material gas in a state in which the surface of the target substrate has no catalytic function.

Embodiments include a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source includes a plurality of high-frequency emission modules, where each high-frequency emission module comprises an oscillator module, an amplification module, and an applicator. In an embodiment the oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, each high-frequency emission module includes a different oscillator module.

A plasma processing apparatus includes a processing chamber 101 where a wafer 114 is processed using plasma 111, a radio frequency power supply 106 configured to supply a radio frequency power for generating the plasma 111, a mechanism configured to form a magnetic field for forming ECR and to control a magnetic flux density thereof, and a sample stage 113 on which the wafer 114 is placed. The plasma processing apparatus further includes a control unit 107 configured to, based on image data of the plasma 111, monitor a height of ECR which is electron cyclotron resonance generated by an interaction between the radio frequency power and the magnetic field, and to control a frequency of the radio frequency power such that the monitored ECR height becomes a predetermined height.

A microwave coupling/combining device for coupling and combining at least two microwave sources includes a waveguide provided with a sleeve extending longitudinally along a main axis and having two opposing ends having a first end provided with an element forming a short-circuit and a second open end. The device further includes at least one transverse bar extending inside the sleeve along a transverse axis orthogonal to the main axis; and at least two coaxial connectors provided for being connected respectively to microwave sources. Each coaxial connector is mounted externally on the sleeve and has a central conductive core connected to and extended by a conductive antenna extending in a direction orthogonal to the transverse axis and to the main axis inside the sleeve and ending by an end attached to a transverse bar.

An inspection method is provided. The inspection method includes monitoring power of a reflected wave of a power wave supplied from a source power supply for generation of plasma in a plasma processing apparatus, and obtaining a fluctuation amount of a measured value within a period after initiation of the supply of the power wave. The fluctuation amount the measured value is a fluctuation amount indicating a fluctuation in a peak-to-peak voltage at a lower electrode of the substrate support in the chamber or a fluctuation amount indicating a fluctuation in impedance of a load including the lower electrode.

Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatus 1 includes a first electrode (a base material 110B) disposed in a sample stage 110, a ring-shaped second electrode (a conductive ring 114) disposed surrounding an outer peripheral side of an upper surface portion 310 (a dielectric film portion 110A) of the sample stage 110, a dielectric ring-shaped member (a susceptor ring 113) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion 310, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching device 117 disposed on a power supply path to the second electrode. Further, a first position (A1) and a grounding position between the second electrode and the matching device 117 on the power supply path to the second electrode are electrically connected via a resistor 118 having a predetermined value.