Detection accuracy of a power of a progressive wave and detection accuracy of a power of a reflection wave can be improved. In a plasma processing apparatus, a first directional coupler is provided in a first waveguide which is configured to connect a microwave generating unit and a first port of a circulator. A first detector is connected to the first directional coupler. A second port of the circulator is connected to a plasma generating unit via a second waveguide. Further, a second directional coupler is provided in a third waveguide which is configured to connect a third port of the circulator and a dummy load. A second detector is connected to the second directional coupler.

Embodiments include a modular microwave source. In an embodiment, the modular microwave source comprises a voltage control circuit, a voltage controlled oscillator, where an output voltage from the voltage control circuit drives oscillation in the voltage controlled oscillator. The modular microwave source may also include a solid state microwave amplification module coupled to the voltage controlled oscillator. In an embodiment, the solid state microwave amplification module amplifies an output from the voltage controlled oscillator. The modular microwave source may also include an applicator coupled to the solid state microwave amplification module, where the applicator is a dielectric resonator.

A method of generating power with a power generation system. Solid state generators generate a plurality of outputs. The outputs of the solid state generator modules are combined from a plurality of channels, in a combiner, using a phase optimization technique to generate an in phase combined output power.

A plasma generation system includes a reference clock, a plurality of solid state generator modules, and a processing chamber. The reference clock is configured to generate a reference signal. Each solid state generator module is linked to an electronic switch and each electronic switch is linked to the reference clock. The solid state generator modules are each configured to generate an output based on the reference signal from the reference clock. The processing chamber is configured to receive the output of at least two of the solid state generator modules to combine the outputs of said solid state generator modules therein.

A device monitors a pulse frequency and a duty ratio of a microwave generated by a microwave output device provided in a plasma processing apparatus. The plasma processing apparatus includes a chamber main body, the microwave output device, a wave guide tube, and a tuner. The microwave output device generates the microwave of which power is pulse-modulated. The device includes a wave detection unit and an acquisition unit. The wave detection unit detects a measured value corresponding to travelling wave power of a microwave in the wave guide tube. The acquisition unit acquires a frequency and a duty ratio of the travelling wave power on the basis of the measured value detected by the wave detection unit.

A microwave generating system includes a modular architecture which is configurable to provide power output from under 1-kilowatt to over 100-kilowatts. The various power levels are achieved by combining the RF outputs of multiple RF power amplifiers in a corporate structure. The system can be used on any ISM band. Each system component incorporates a dedicated embedded microcontroller for high performance real-time control response. The components are connected to a high speed digital data bus, and are commanded and supervised by a control program running on a host computer.

In a high frequency generator, a high frequency generated by an IQ modulation of a vector multiplier and a amplification of an amplifier is outputted through an output unit. An directional coupler outputs a first high frequency including a part of traveling waves and a second high frequency including a part of reflected waves. A control units obtains an estimated value of each of an in-phase component and an orthogonal component of the traveling waves in the output unit, and an in-phase component and an orthogonal component of the reflected waves in the output unit by performing a first matrix operation that is an operation of four polynomials, each including as multi-variables an in-phase component and an orthogonal component of a first high frequency and an in-phase component and an orthogonal component of the second high frequency.

A microwave plasma source for generating a microwave plasma inside a chamber by radiating a microwave into the chamber, includes: a microwave oscillator for oscillating the microwave and vary an oscillation frequency thereof; a waveguide through which the microwave propagates; an antenna part including a slot antenna for radiating the microwave into the chamber and having a predetermined pattern of slots, and a microwave-transmitting plate constituting a ceiling plate of the chamber and made of a dielectric material through which the microwave radiated from the slots transmits; temperature detectors for detecting temperatures at plural positions of the antenna part outside the chamber when the microwave plasma is generated; and a frequency controller for receiving detection signals obtained by the temperature detectors and controlling the oscillation frequency of the microwave oscillator so that a plasma density distribution inside the chamber becomes a desired distribution based on the detection signals.

The present invention provides a plasma generating system that includes: a programmable logic controller (PLC) and a plurality of reactor systems coupled to the PLC by a daisy chain network. Each of the plurality of reactor systems include: a microwave generator for generating microwave energy; and a power supply for providing electrical power to the microwave generator and including a controller, where the controller comprises: at least one microprocessor; and a module communicatively coupled to the at least one processor and including at least one of digital input-output (DIO) and analogue input-output (AIO).

A plasma processing apparatus includes: a processing chamber; a first radio frequency power supply configured to supply a first radio frequency power; a second radio frequency power supply configured to supply a second radio frequency power; and a control device configured to, when the first radio frequency power is modulated by a first waveform having a first period and a second period adjacent to the first period, and the second radio frequency power supply is modulated by a second waveform having a period A and a period B, control the second radio frequency power supply such that each second radio frequency power in the period A is supplied in the first period and the second period, in which an amplitude in the second period is smaller than an amplitude in the first period, and an amplitude in the period A is larger than an amplitude in the period B.