There is provided a plasma processing apparatus including a microwave output part configured to generate microwaves and to distribute and output the microwaves to a plurality of paths, a microwave transmission part configured to transmit the microwaves outputted from the microwave output part into a process container via a plurality of transmission paths, and a control part configured to control the microwaves. The control part is configured to control the microwaves such that the phases of microwaves become different from each other when the microwaves transmitted via the transmission paths are introduced from a microwave transmitting plate for common use into the process container.

A plasma processing apparatus includes a processing chamber 101 where a wafer 114 is processed using plasma 111, a radio frequency power supply 106 configured to supply a radio frequency power for generating the plasma 111, a mechanism configured to form a magnetic field for forming ECR and to control a magnetic flux density thereof, and a sample stage 113 on which the wafer 114 is placed. The plasma processing apparatus further includes a control unit 107 configured to, based on image data of the plasma 111, monitor a height of ECR which is electron cyclotron resonance generated by an interaction between the radio frequency power and the magnetic field, and to control a frequency of the radio frequency power such that the monitored ECR height becomes a predetermined height.

Embodiments include a modular microwave source. In an embodiment, the modular microwave source comprises a voltage control circuit, a voltage controlled oscillator, where an output voltage from the voltage control circuit drives oscillation in the voltage controlled oscillator. The modular microwave source may also include a solid state microwave amplification module coupled to the voltage controlled oscillator. In an embodiment, the solid state microwave amplification module amplifies an output from the voltage controlled oscillator. The modular microwave source may also include an applicator coupled to the solid state microwave amplification module, where the applicator is a dielectric resonator.

A microwave generating system includes a modular architecture which is configurable to provide power output from under 1-kilowatt to over 100-kilowatts. The various power levels are achieved by combining the RF outputs of multiple RF power amplifiers in a corporate structure. The system can be used on any ISM band. Each system component incorporates a dedicated embedded microcontroller for high performance real-time control response. The components are connected to a high speed digital data bus, and are commanded and supervised by a control program running on a host computer.

A plasma processing apparatus includes a processing chamber configured to perform a plasma processing on a sample, a first radio frequency power supply configured to generate a plasma, a sample stage configured to place the sample thereon, a second radio frequency power supply configured to supply a radio frequency power to the sample stage, a mass flow controller configured to supply a gas into the processing chamber, and a control device configured to change the radio frequency power supplied from the first radio frequency power supply or the second radio frequency power supply based on a change of plasma impedance after a first gas is switched to a second gas.

A microwave control method is used in a microwave plasma processing apparatus including a microwave generation unit, a waveguide for guiding a microwave generated by the microwave generation unit, a tuner for controlling a position of a movable short-circuiting plate, and a stub provided between the tuner and an antenna in the waveguide and insertable into an inner space of the waveguide. The method includes detecting the position of the movable short-circuiting plate controlled by the tuner for the microwave outputted by the microwave generation unit, determining whether or not a difference between a reference position and the detected position of the movable short-circuiting plate is within a tolerable range, and controlling an insertion length of the stub into the inner space of the waveguide when it is determined that the difference between the position of the movable short-circuiting plate and the reference position is not within the tolerable range.

A multifunctional microwave plasma and ultraviolet light deodorization treatment unit, which includes: a rapid decomposition device (1), a high frequency plasma electric field (2), a microwave plasma electric field (3), a high intensity ultraviolet radiation field (4), a low temperature plasma electric field (5), a high intensity ozone gas reaction chamber (6), a reaction termination chamber (7) and a clean gas organization chamber (8) sequentially installed inside a horizontal rectangular box which has an elongated body defining a horizontal axis and has a channel cavity therein. The deodorization treatment unit further includes an exhaust gas odor collecting pipe and an odor gas storage cabinet (9) connected to an air pump (10), the air pump (10) is connected to an odor gas inlet of the rapid decomposition device (1), the clean gas organization chamber (8) has one end connected to a clean gas exhaust pipe.

A plasma processing apparatus includes a microwave generation unit configured to generate a microwave, a processing vessel configured to introduce the microwave thereinto, and a gas supply mechanism configured to supply a gas into the processing vessel, plasma being generated within the processing vessel so that a plasma processing is performed on a processing target object. The microwave generation unit includes an oscillation circuit configured to oscillate the microwave, a pulse generation circuit configured to oscillate a control wave having a predetermined frequency bandwidth at a predetermined cycle, and a frequency modulation circuit configured to modulate a frequency of the microwave to a modulated wave having the predetermined frequency bandwidth by the control wave and output the modulated wave, and the frequency modulation circuit alternately and repeatedly outputs the modulated wave and a non-modulated microwave at the predetermined cycle.

Disclosed is a plasma processing apparatus including a processing container, a plasma generation mechanism, a regulation unit, a detection unit, and a determination unit. The plasma generation mechanism includes a microwave oscillator, and generates plasma within the processing container using microwaves oscillated by the microwave oscillator. The regulation unit regulates an oscillation frequency, which corresponds to a frequency of the microwaves oscillated by the microwave oscillator, to a predetermined frequency. The detection unit detects the oscillation frequency regulated to the predetermined frequency by the regulation unit. The determination unit determines the success/failure of regulation of the oscillation frequency by the regulation unit, using the oscillation frequency detected by the detection unit, or using a parameter which is changed depending on a difference between the oscillation frequency and the predetermined frequency.

The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated optical measurement system that enable microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond while measuring the local surface properties of the component while being grown. Related methods include deposition of the component, measurement of the local surface properties, and/or alteration of operating conditions during deposition in response to the local surface properties. As described in more detail below, the MPCR apparatus includes one or more electrically conductive, optically transparent regions forming part of the external boundary of its microwave chamber, thus permitting external optical interrogation of internal reactor conditions during deposition while providing a desired electrical microwave chamber to maintain selected microwave excitation modes therein.