A tetrahedral amorphous hydrogenated carbon and amorphous siloxane hybrid diamond-like nanocomposite composition can include: tetrahedral amorphous hydrogenated carbon (ta-C:H); and amorphous siloxane (a-Si:O), wherein the ta-C:H and a-Si:O are in an interpenetrating network. A method of forming a tetrahedral amorphous hydrogenated carbon and amorphous siloxane hybrid diamond-like nanocomposite can include: providing a source of H, C, O, and Si as a liquid precursor; providing evaporated precursor into a vacuum chamber; forming a plasma with an RF plasma generator and/or a thermal plasma generator; and depositing, on a rotating biased substrate, a collimated layer of the tetrahedral amorphous hydrogenated carbon and amorphous siloxane hybrid diamond-like nanocomposite having tetrahedral amorphous hydrogenated carbon (ta-C:H) and amorphous siloxane (a-Si:O), wherein the ta-C:H and a-Si:O are in an interpenetrating network. A RF rotating electrode is also provided.

A beam intensity converting film that has sufficient shielding property, sufficient durability, and sufficient heat resistance and that can reduce the extent of radioactivation. An attenuator is constituted by a graphite film placed such that a surface thereof intersects the beam axis of a charged particle beam, the graphite film has a thickness of 1 μm or greater, and the thermal conductivity in a surface direction of the graphite film is equal to or greater than 20 times the thermal conductivity in the thickness direction of the graphite film.

A plasma treatment device is provided and includes a first electrode, a dielectric body supportive of the first electrode and a second mesh electrode having an opposite polarity as the first electrode and comprising a seating portion. The second mesh electrode is disposed proximate to the dielectric body to define a gap receptive of particles for collection in the seating portion. The gap is sized such that, with the second mesh electrode activated, a plasma field is generated to treat the particles in the seating portion. The seating portion is configured to retain the particles during treatment in opposition to ionic winds resulting from the plasma field.

A tetrahedral amorphous hydrogenated carbon and amorphous siloxane hybrid diamond-like nanocomposite composition can include: tetrahedral amorphous hydrogenated carbon (ta-C:H); and amorphous siloxane (a-Si:O), wherein the ta-C:H and a-Si:O are in an interpenetrating network. A method of forming a tetrahedral amorphous hydrogenated carbon and amorphous siloxane hybrid diamond-like nanocomposite can include: providing a source of H, C, O, and Si as a liquid precursor; providing evaporated precursor into a vacuum chamber; forming a plasma with an RF plasma generator and/or a thermal plasma generator; and depositing, on a rotating biased substrate, a collimated layer of the tetrahedral amorphous hydrogenated carbon and amorphous siloxane hybrid diamond-like nanocomposite having tetrahedral amorphous hydrogenated carbon (ta-C:H) and amorphous siloxane (a-Si:O), wherein the ta-C:H and a-Si:O are in an interpenetrating network. A RF rotating electrode is also provided.

The present disclosure provides a method of processing a substrate within an ion beam system. The substrate has a top surface that has a plurality of features, an edge and a bottom surface. The substrate is placed on a wafer stage and an energetic particle beam having a radial flux distribution over at least a portion of a major dimension thereof is ignited. The energetic particle beam is stabilized while the bottom surface of the substrate is oriented toward the major dimension of the energetic particle beam. The wafer stage with the substrate is oriented so that the top surface of the substrate is exposed to the major dimension of the energetic particle beam. After stabilization of the energetic particle beam, the plurality of features on the top surface of the substrate are exposed to the energetic particle beam in a treatment zone.

Methods and apparatuses for the production of HF in an electron-beam generated plasma. A gas containing fluorine, hydrogen, and an inert gas such as argon, e.g., Ar/SF.sub.6/H.sub.2O or Ar/SF.sub.6/NH.sub.3 flows into a plasma treatment chamber to produce a low pressure gas in the chamber. An electron beam directed into the gas forms a plasma from the gas, with energy from the electron beam dissociating the F-containing molecules, which react with H-containing gas to produce HF in the plasma. Although the concentration of the gas phase HF in the plasma is a very small fraction of the total gas in the chamber, due to its highly reactive nature, the low concentration of HF produced by the method of the present invention is enough to modify the surfaces of materials, performing the same function as aqueous HF solutions to remove oxygen from an exposed material.

A charged particle emission device includes a pre-emission state detector configured to detect a pre-emission charged state which is a charged state of a charged object before the charged particles are emitted, a learned model configured to receive a charged state of a charged object and a control parameter related to a control amount used for control of the charged particles to be emitted to the charged object to generate an estimated charged state which is a charged state of the charged object after the charged particles are controlled under the control parameter and emitted, an estimated charged state generator configured to input the pre-emission charged state and a plurality of control parameters to the learned model to generate a plurality of estimated charged states corresponding to the pre-emission charged state and the plurality of control parameters.

A charged particle emission device includes a pre-emission state detector configured to detect a pre-emission charged state which is a charged state of the charged object before charged particles are emitted, an emission time generator configured to generate an emission time based on a past emission time of charged particles and a charged state of the charged object after the emission, emission processor circuitry configured to emit charged particles to the charged object which is in the pre-emission charged state based on the generated emission time, a post-emission state detector configured to detect a post-emission charged state which is a charged state of the charged object after the charged particles are emitted, machine learning processor circuitry configured to cause a machine learning model to learn a correspondence among the pre-emission charged state, the post-emission charged state, and the emission time generated by the emission time generator.

Methods and apparatuses for the production of HF in an electron-beam generated plasma. A gas containing fluorine, hydrogen, and an inert gas such as argon, e.g., Ar/SF.sub.6/H.sub.2O or Ar/SF.sub.6/NH.sub.3 flows into a plasma treatment chamber to produce a low pressure gas in the chamber. An electron beam directed into the gas forms a plasma from the gas, with energy from the electron beam dissociating the F-containing molecules, which react with H-containing gas to produce HF in the plasma. Although the concentration of the gas phase HF in the plasma is a very small fraction of the total gas in the chamber, due to its highly reactive nature, the low concentration of HF produced by the method of the present invention is enough to modify the surfaces of materials, performing the same function as aqueous HF solutions to remove oxygen from an exposed material.

A method of plasma processing comprises generating electrons in a source chamber, generating an electric potential gradient between the source chamber and a processing chamber by applying a first negative direct current (DC) voltage to the source chamber and a ground voltage to the processing chamber, accelerating the electrons from the source chamber through a dielectric injector and into the processing chamber using the electric potential gradient, and generating an electron-beam sustained plasma (ESP) in the processing chamber using the electrons from the source chamber.