A charged particle beam treatment apparatus includes an irradiator that irradiates an irradiation target with a charged particle beam by a scanning method, in which the irradiator includes a scanning electromagnet that performs scanning with the charged particle beam, is rotatable around the irradiation target by a rotating gantry, and emits the charged particle beam with a base axis orthogonal to a center line of the rotating gantry and passing through the center line as a reference, and when the scanning electromagnet is not operated, the charged particle beam which is emitted from a tip portion of the irradiator is inclined in one direction with respect to the base axis.

Methods and systems for charged particle microscope confocal imaging are disclosed herein. An example method includes obtaining a plurality of probe images of a portion of a sample, each probe image of the plurality of probe images obtained at a different focal depth within the sample, applying a virtual aperture to each probe image of the plurality of probe images to form a respective plurality of confocal images, and forming a three-dimensional reconstruction of the sample based on the plurality of confocal images.

Methods and systems for charged particle microscope confocal imaging are disclosed herein. An example method includes obtaining a plurality of probe images of a portion of a sample, each probe image of the plurality of probe images obtained at a different focal depth within the sample, applying a virtual aperture to each probe image of the plurality of probe images to form a respective plurality of confocal images, and forming a three-dimensional reconstruction of the sample based on the plurality of confocal images.

A method of operating a charged particle microscope comprising: Providing a specimen on a specimen holder; Using a source to produce a beam of charged particles, and irradiating the specimen with said beam; Using a detector to detect X-ray radiation emanating from the specimen in response to said irradiation, and to produce a spectrum comprising X-ray characteristic peaks on a Bremsstrahlung background, comprising the following additional steps: Using an elemental decomposition algorithm to analyze the characteristic peaks in said spectrum, thereby determining a reference group of major chemical elements contributing to the spectrum; Calculating an average atomic number for said reference group, and using this in a predictive model to generate a calculated Bremsstrahlung profile for the reference group; Fitting said calculated Bremsstrahlung profile to the Bremsstrahlung background in said spectrum, and attributing a discrepancy between the latter and the former to a residual element absent from, or incorrectly quantified in, said reference group.

A method of etching uses an overhead electron beam source that generates an ion-ion plasma for performing an atomic layer etch process.

A method of performing deposition of diamond-like carbon on a workpiece in a chamber includes supporting the workpiece in the chamber facing an upper electrode suspended from a ceiling of the chamber, introducing a hydrocarbon gas into the chamber, and applying first RF power at a first frequency to the upper electrode that generates a plasma in the chamber and produces a deposition of diamond-like carbon on the workpiece. Applying the RF power generates an electron beam from the upper electrode toward the workpiece to enhance ionization of the hydrocarbon gas.

A chamber has an upper housing and a lower housing and receives a reaction gas. A first plasma source includes electron beam sources providing electron beams into the upper housing to generate an upper plasma. A second plasma source includes holes generating a lower plasma within the holes connecting the upper housing and the lower housing. Radicals of the upper plasma, radicals of the lower plasma, and ions of the lower plasma are provided, through the holes, to the lower housing so that the lower housing has radicals and ions at a predetermined ratio of the ions to the radicals in concentration. The second plasma source divides the chamber into the upper housing and the lower housing. A wafer chuck is positioned in the lower housing to receive a wafer.

Methods and apparatuses for the production of HF in an electron-beam generated plasma. A gas containing fluorine, hydrogen, and an inert gas such as argon, e.g., Ar/SF.sub.6/H.sub.2O or Ar/SF.sub.6/NH.sub.3 flows into a plasma treatment chamber to produce a low pressure gas in the chamber. An electron beam directed into the gas forms a plasma from the gas, with energy from the electron beam dissociating the F-containing molecules, which react with H-containing gas to produce HF in the plasma. Although the concentration of the gas phase HF in the plasma is a very small fraction of the total gas in the chamber, due to its highly reactive nature, the low concentration of HF produced by the method of the present invention is enough to modify the surfaces of materials, performing the same function as aqueous HF solutions to remove oxygen from an exposed material.

A spatially selective surface functionalization device configured to generate a pattern of micro plasmas and functionalize a substrate surface may include: a pattern management system, a patterning head, and a gas delivery system, wherein the gas delivery system provides a primed gas mixture for forming a plasma between the patterning head and a target substrate below the patterning head. A patterning head may generate a distribution of micro plasmas from individual directed beams of electrons with spatial separation. A pattern management system may store and manipulate information about a pattern of surface functionalization and generate instructions for regulating a distribution of micro plasmas that functionalize a substrate surface.

A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.