A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.

A virtual cathode deposition apparatus utilises virtual plasma cathode for generation of high density electron beam to ablate a solid target. A high voltage electrical pulse ionizes gas to produce a plasma which temporarily appears in front of the target and serves as the virtual plasma cathode at the vicinity of target. This plasma then disappears allowing the ablated target material in a form of a plasma plume to propagate toward the substrate. Several virtual cathodes operating in parallel provide plumes that merge into a uniform plasma which when condensing on a nearby substrate leads to wide area deposition of a uniform thickness thin film.

A method for applying a coating to a defect area of a reactor component includes forming a patch on the reactor component at the defect area using a plasma-spray coating process. The plasma-spray coating process includes grounding the reactor component and a power supply of a plasma gun to a common ground such that a potential difference exists between the reactor component and a cathode of the plasma gun, and concurrently directing an ion-etching stream and a coating stream towards the region of the reactor component using the plasma gun while maintaining a desired distance between the plasma gun and the region of the reactor component. The directing the ion-etching stream includes heating the region of the reactor component using a plasma stream exiting a spray nozzle of the plasma gun. The coating stream includes droplets of a coating material.

A method for applying a coating to a defect area of a reactor component includes forming a patch on the reactor component at the defect area using a plasma-spray coating process. The plasma-spray coating process includes grounding the reactor component and a power supply of a plasma gun to a common ground such that a potential difference exists between the reactor component and a cathode of the plasma gun, and concurrently directing an ion-etching stream and a coating stream towards the region of the reactor component using the plasma gun while maintaining a desired distance between the plasma gun and the region of the reactor component. The directing the ion-etching stream includes heating the region of the reactor component using a plasma stream exiting a spray nozzle of the plasma gun. The coating stream includes droplets of a coating material.

A plasma generating device includes a plasma source having a plasma source hollow body (1) and an electron emission unit (5) for emitting free electrons into the plasma source hollow body. The plasma source hollow body (1) has a first gas inlet (7a) and a plasma source opening (10) which forms an opening to a vacuum chamber. An anode has an anode hollow body (2). The anode hollow body (2) has a second gas inlet (7b) and an anode opening (11) which forms an opening to the vacuum chamber, and a voltage source (8) the negative pole of which is connected to the electron emission unit (5) and the positive pole of which is connected to the anode hollow body (2). The positive pole of the voltage source (8) is electrically connected by a first shunt (6a) to the plasma source hollow body.

A chemical vapor deposition source that includes at least one plate to which first and second electrical connection posts are coupled. The chemical vapor deposition source also includes a filament having a first end and a second end. The first end of the filament is electrically connected to the first electrical connection post and the second end of the filament is electrically connected to the second electrical connection post. The chemical vapor deposition source further includes at least one filament holder electrically insulated from the at least one plate. The at least one filament holder holds a portion of the filament between the first end and the second end.

A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system.

A charged particle emission device includes a pre-emission state detector configured to detect a pre-emission charged state which is a charged state of a charged object before the charged particles are emitted, a learned model configured to receive a charged state of a charged object and a control parameter related to a control amount used for control of the charged particles to be emitted to the charged object to generate an estimated charged state which is a charged state of the charged object after the charged particles are controlled under the control parameter and emitted, an estimated charged state generator configured to input the pre-emission charged state and a plurality of control parameters to the learned model to generate a plurality of estimated charged states corresponding to the pre-emission charged state and the plurality of control parameters.

A substrate bonding apparatus includes a vacuum chamber, a surface activation part for activating respective bonding surfaces of a first substrate and a second substrate, and stage moving mechanisms for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates. In order to activate the bonding surfaces in the vacuum chamber, the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates.

The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.