The invention relates to the production of wear-resistant layers which are exposed to friction wear on surfaces of components of internal combustion engines. In the process, wear-resistant layers are formed on the respective surface by electric arc discharge under vacuum conditions. The wear-resistant layers are formed from at least approximately hydrogen-free tetrahedrally amorphous (ta-C) comprising a mixture of sp2 and sp3 hybridized carbon and have a microhardness of at least 3500 HV and an arithmetical mean roughness value Ra of 0.1 μm without a mechanical, physical and/or chemical surface processing taking place.

A plasma processing device, a plasma processing method and a manufacturing method of an electronic device with excellent uniformity, are capable of performing heating and high-speed processing for a short period of time as well as controlling the distribution of heating performances in a linear direction (amounts of heat influx to a substrate). In an inductively-coupled plasma torch unit, coils, a first ceramic block and a second ceramic block are arranged, and a chamber has an annular shape. A plasma P is applied to a substrate at an opening of the chamber. The chamber and the substrate are relatively moved in a direction perpendicular to a longitudinal direction of the opening. Plural gas jetting ports jetting a gas toward a substrate stage are provided side by side in a direction of a line formed by the opening, thereby controlling the distribution of heating performances in the linear direction and realizing plasma processing with excellent uniformity.

The invention is equipped with a hydrophilic group generating gas supply portion, an installation stand, an irradiation device, and a flow generation portion. The hydrophilic group generating gas supply portion supplies a hydrophilic group generating gas into the treatment chamber. The installation stand is equipped with an installation plate and a support member. The installation plate has a ventilation portion, and the support member is provided protrusively from the installation plate, and supports the workpiece with an air gap left between the workpiece and the installation plate. The irradiation device irradiates the workpiece with an energy wave that induces activation of the hydrophilic group generating gas. The flow generation portion generates a flow of at least part of the activated hydrophilic group generating gas such that the hydrophilic group generating gas flows via the ventilation portion of the installation plate and flows around into the air gap.

Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.

A film thickness distribution exists in a substrate plane after CMP step. This film thickness distribution results in, for example, variation in gate threshold value voltages of metal gates, and causes variation in element characteristics. It is an object of the present invention to easily improve the film thickness distribution processed by this CMP step. By using the ion beam etching method after the CMP step, the film thickness distribution in the plane of the substrate 111 is corrected. More specifically, when the ion beam etching is performed, the plasma density in the plasma generation chamber 102 is caused to be different between a position facing a central portion in the plane of the substrate 111 and a position facing an outer peripheral portion, so that the etching rate in the central portion in the plane of the substrate 111 and the etching rate in the outer peripheral portion in the substrate plane 111 are caused to be different.

In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

Techniques herein include systems and methods for fine control of temperature distribution across a substrate. Such techniques can be used to provide uniform spatial temperature distribution, or a biased spatial temperature distribution to improve plasma processing of substrates and/or correct characteristics of a given substrate. Embodiments include a plasma processing system with temperature control. Temperature control systems herein include a primary heating mechanism to heat a substrate, and a secondary heating mechanism that precisely modifies spatial temperature distribution across a substrate being processed. At least one heating mechanism includes a digital projection system configured to project a pattern of electromagnetic radiation onto or into a substrate, or through the substrate and onto a substrate support assembly. The digital projection system is configured to spatially and dynamically adjust the pattern of electromagnetic radiation and selectively augment heating of the substrate by each projected point location.

A magnetic resonance apparatus comprising: a magnetic system configured to provide a magnetic field throughout at least a portion of a cavity, the magnetic field based on magnetic-system-control-data; a transmitter antenna disposed at least partly within the cavity and configured to transmit radio-frequency-transmitted-signalling based on transmitter-control-data; and a receiver antenna disposed at least partly within the cavity and configured to receive radio-frequency-received-signalling representative of magnetic resonance interactions of at least one object, disposed within the portion of the cavity, with the magnetic field and the radio-frequency-transmitted-signalling; wherein, at least one of the transmitter antenna, the receiver antenna and the magnetic system comprises a plasma antenna, and the magnetic resonance imaging apparatus is configured to provide received-data representative of the radio-frequency-received-signalling, the received-data in combination with the magnetic-system-control-data and the transmitter-control-data suitable for providing magnetic resonance imaging and/or magnetic resonance spectroscopy of the at least one object.

An extreme ultraviolet light generation apparatus may include a chamber device, a concentrating mirror, a central gas supply port configured to supply gas along a focal line passing through a first focal point and a second focal point from the center side of the reflection surface, and a first peripheral gas supply port disposed at a peripheral portion of the reflection surface and configured to supply gas in a direction from the outer side of the reflection surface toward the inner side of the reflection surface. The first peripheral gas supply port may supply gas, when viewed along the focal line, in an inclined direction inclined to a tangential direction side of the peripheral portion at the peripheral portion where the first peripheral gas supply port is located with respect to a first straight line passing through the first peripheral gas supply port and the focal line.

Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.