In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes housing the substrate provided with the first film in a chamber, and introducing a first gas into the chamber. The method further includes generating plasma discharge of the first gas in the chamber or applying radiation to the first gas in the chamber. The method further includes introducing a second gas containing a metal component into the chamber to cause the metal component to infiltrate into the first film after the generation of the plasma discharge or the application of the radiation is started.

Techniques herein include systems and methods for fine control of temperature distribution across a substrate. Such techniques can be used to provide uniform spatial temperature distribution, or a biased spatial temperature distribution to improve plasma processing of substrates and/or correct characteristics of a given substrate. Embodiments include a plasma processing system with temperature control. Temperature control systems herein include a primary heating mechanism to heat a substrate, and a secondary heating mechanism that precisely modifies spatial temperature distribution across a substrate being processed. At least one heating mechanism includes a digital projection system configured to project a pattern of electromagnetic radiation onto or into a substrate, or through the substrate and onto a substrate support assembly. The digital projection system is configured to spatially and dynamically adjust the pattern of electromagnetic radiation and selectively augment heating of the substrate by each projected point location.

Disclosed are a substrate treating apparatus, a substrate treating method, and a plasma generating unit. The substrate treating apparatus includes a housing configured to provide a treatment space, in which a substrate is treated, a support unit configured to support a substrate in the treatment space, a plasma generating unit disposed outside the housing and configured to excite plasma from a gas and supply the excited plasma to the treatment space, and a controller, wherein the plasma generating unit includes a plasma generating chamber having a space, into which a gas is introduced, a first antenna wound to surround the plasma generating chamber and connected to a power source through an electric wire, a second antenna wound around the plasma generating chamber and connected to the power source through an auxiliary electric wire, and a switch configured to switch on and off the auxiliary electric wire.

Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide layer on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide layer in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer. In another embodiment, a method includes supplying a deposition gas mixture including at least a metal containing precursor and a reacting gas on a surface of a substrate, forming a plasma in the presence of the deposition gas mixture by exposure to microwave power, exposing the plasma to light radiation, and forming a metal silicide layer on the substrate from the deposition gas.

Techniques herein include systems and methods for fine control of temperature distribution across a substrate. Such techniques can be used to provide uniform spatial temperature distribution, or a biased spatial temperature distribution to improve plasma processing of substrates and/or correct characteristics of a given substrate. Embodiments include a plasma processing system with temperature control. Temperature control systems herein include a primary heating mechanism to heat a substrate, and a secondary heating mechanism that precisely modifies spatial temperature distribution across a substrate being processed. At least one heating mechanism includes a digital projection system configured to project a pattern of electromagnetic radiation onto or into a substrate, or through the substrate and onto a substrate support assembly. The digital projection system is configured to spatially and dynamically adjust the pattern of electromagnetic radiation and selectively augment heating of the substrate by each projected point location.

An extreme ultraviolet light generating apparatus, may include: a chamber, in which extreme ultraviolet light is generated by plasma being generated in the interior thereof; a window provided in a wall of the chamber; a light source provided at the exterior of the chamber, configured to output illuminating light to the interior of the chamber via the window; a light sensor, configured to detect the illuminating light which is output to the interior of the chamber via the window; a shielding member having an opening that the illuminating light may pass through, that shields the window from emissions from the plasma, provided in the interior of the chamber; and a mirror provided along an optical path of the illuminating light in the interior of the chamber between the window and the shielding member, having a reflective surface that reflects the illuminating light, constituted by a surface of a metal layer.

An extreme ultraviolet light generating apparatus, may include: a chamber, in which extreme ultraviolet light is generated by plasma being generated in the interior thereof; a window provided in a wall of the chamber; a light source provided at the exterior of the chamber, configured to output illuminating light to the interior of the chamber via the window; a light sensor, configured to detect the illuminating light which is output to the interior of the chamber via the window; a shielding member having an opening that the illuminating light may pass through, that shields the window from emissions from the plasma, provided in the interior of the chamber; and a mirror provided along an optical path of the illuminating light in the interior of the chamber between the window and the shielding member, having a reflective surface that reflects the illuminating light, constituted by a surface of a metal layer.

An apparatus for abatement of gases is provided. The apparatus includes a toroidal plasma chamber having a plurality of inlets and an outlet, and at least one chamber wall. One or more magnetic cores are disposed relative to the toroidal plasma chamber. The plasma chamber confines a toroidal plasma. A second gas inlet is positioned on the toroidal plasma chamber between a first gas inlet and the gas outlet at a distance d from the gas outlet, such that a toroidal plasma channel volume between the first gas inlet and the second gas inlet in the is substantially filled by the inert gas, the distance d based on a desired residence time of the gas to be abated.

An ion extraction assembly for an ion source is provided. The ion extraction assembly may include a plurality of electrodes, wherein the plurality of electrodes comprises: a plasma-facing electrode, arranged for coupling to a plasma chamber; and a substrate-facing electrode, disposed outside of the plasma-facing electrode. The at least one electrode of the plurality of electrodes may include a grid structure, defining a plurality of holes, wherein the at least one electrode has a non-uniform thickness, wherein a first grid thickness in a middle region of the at least one electrode is different than a second grid thickness, in an outer region of the at least one electrode.

An ion beam etching device includes a grid provided between a treatment chamber and a plasma generation chamber, and for forming an ion beam by drawing ions from the plasma generation chamber; a gas introduction unit for introducing discharge gas into the plasma generation chamber; an exhaust for exhausting the treatment chamber; a substrate holder; a control unit to receive a measurement result of an in-plane film thickness distribution before the substrate is processed; and an electromagnetic coil provided outside of the plasma generation chamber in a ceiling portion opposite to the grid of the plasma generation chamber. The electromagnetic coil includes an outer coil provided on an outer circumference of the ceiling portion and an inner coil provided on an inner circumference of the ceiling portion, and the control unit controls the currents applied to the outer coil and the inner coil in accordance with the measurement result.