Various embodiments include apparatuses, systems, and methods for using a remote-plasma cleaning system with a directional-flow device for concurrently cleaning multiple processing stations in a processing tool used in the semiconductor and allied fields. In one example, an apparatus used to perform a remote-plasma clean (RPC) in a multi-station process chamber is disclosed and includes an RPC directional-flow device that is to be coupled between an RPC reactor and the process chamber. The RPC directional-flow device includes a number of ramped gas-diversion areas to direct at least a radical species generated by the RPC reactor to a separate one of the processing stations. An incoming cleaning-gas diversion hub is to receive the radical species and distribute at least the species substantially-uniformly to each of the of the ramped gas-diversion areas. Other apparatuses, systems, and methods are disclosed.

There is provided a high dielectric film including amorphous hydrocarbon of which a dielectric constant is 10 or more. A leakage current of the high dielectric film is 1 A/cm.sup.2 or less, and an insulation level is 1 MV/cm or more. Rms surface roughness of the high dielectric film is 20 nm or less.

A method of performing pulsed remote plasma etching includes arranging a substrate in a processing chamber configured to perform pulsed remote plasma etching, setting at least one process parameter of the processing chamber, supplying at least one gas mixture to an upper chamber region of the processing chamber, supplying, in an ON period, a first voltage to coils arranged around the upper chamber region to energize the at least one gas mixture and generate plasma within the upper chamber region of the processing chamber, turning off the first voltage in an OFF period to discontinue generating plasma within the upper chamber region of the processing chamber, and alternating between supplying the first voltage in the ON period and turning off the first voltage in the OFF period to generate pulsed remote plasma within the upper chamber region of the processing chamber.

A substrate processing method includes providing a substrate with a silicon-containing film in a chamber, supplying a process gas containing an HF gas, a phosphorus halide gas, and at least one gas selected from the group consisting of a C.sub.4H.sub.2F.sub.6 gas, a C.sub.4H.sub.2F.sub.8 gas, a C.sub.3H.sub.2F.sub.4 gas, and a C.sub.3H.sub.2F.sub.6 gas into the chamber to generate plasma, and etching the silicon-containing film in the substrate.

A sputtering apparatus includes a rotary target extending in a first direction, a gas supply bar disposed on the rotary target, and a substrate holder positioned opposite the gas supply bar with respect to the rotary target. The gas supply bar includes a first flow path extending in the first direction, and a second flow path spaced apart from the first flow path in the first direction and separated from the first flow path.

A film deposition method includes maintaining an inside of a chamber to have a predetermined pressure, cooling a stage, on which the object to be processed mounts, to have an ultralow temperature of −20° C., and mounting the object to be processed on the stage, supplying a gas including a low vapor pressure material gas of a low vapor pressure material into the inside of the chamber, and generating plasma from the supplied gas including the gas of the low vapor pressure material, and causing a precursor generated from the low vapor pressure material by the plasma to be deposited on a recess part of the object to be processed.

A gas supply system includes a first flow channel connected to a first gas source of a first gas, formed inside a ceiling or a sidewall of the treatment container, and communicating with the treatment space through a plurality of first gas discharge holes, a second flow channel connected to a second gas source of a second gas, formed inside the ceiling or the sidewall of the treatment container, and communicating with the treatment space through a plurality of second gas discharge holes, and a plurality of first diaphragm valves, wherein each of the first diaphragm valves is provided between the first flow channel and the first gas discharge hole to correspond to the first gas discharge hole.

A plasma processing system includes a chamber, a gas supply unit, a gas exhaust unit, a separating unit, a boost unit and an accumulation unit. The chamber is configured to process a target substrate by plasma of a gaseous mixture of a rare gas and a processing gas. The gas supply unit is configured to supply the rare gas and the processing gas into the chamber. The gas exhaust unit is configured to exhaust a gas containing the rare gas from the chamber. The separating unit is configured to separate the rare gas from the gas exhausted by the gas exhaust unit. The boost unit is configured to boost the rare gas separated by the separating unit. The accumulation unit is configured to accumulate the rare gas boosted by the boost unit and supply the accumulated first rare gas to the gas supply unit.

A purge baffle for a substrate support includes an annular ring configured to surround an outer perimeter around the substrate support in a volume below the substrate support and a first portion. The first portion includes a plenum defined below the first portion and outside of the annular ring in the volume below the substrate support and a plurality of openings that provide respective flow paths from a region above the first portion into the plenum. At least a first opening of the plurality of openings has a first conductance and at least a second opening of the plurality of openings has a second conductance that is different than the first conductance.

Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.