In a plasma processing apparatus including a processing chamber disposed in a vacuum chamber, a sample stage disposed in the processing chamber and on which a sample is placed, in the vacuum chamber, a second shower plate disposed above the sample stage, a first shower plate disposed above the second shower plate, and a dielectric window disposed above the first shower plate, first gas is supplied from a first gas supply unit to a space between the dielectric window and the first shower plate, and second gas is supplied from a second gas supply unit to a space between the first shower plate and the second shower plate.

A workpiece holding tool includes a substrate, a base, and a cylindrical member. The base includes a gas flow channel including a first portion and a second portion. The first portion extends parallel to a bonding surface of the base. The second portion forms branch connection with the first portion and extends perpendicularly to the bonding surface to be open in the bonding surface. The cylindrical member includes a cylindrical body portion located along the second portion and a cylindrical extension portion continuous with the body portion and extending to the first portion.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing a treating space; a support unit supporting a substrate at the treating space; a gas supply unit configured to introduce a gas to the treating space; a plasma source configured to provide an energy for exciting a gas introduced to the treating space to a plasma; an exhaust unit configured to exhaust an atmosphere within the treating space to an outside of the treating space; and a heating source positioned above the support unit, and wherein the heating source applies a heating energy in a pulse form to the substrate.

There is provided a plasma processing apparatus comprising: a plasma processing container; and a substrate support disposed in the plasma processing container and having a support surface on an upper portion of a base. The substrate support includes: a heat transfer gas supply hole configured to supply a heat transfer gas from the base side to the support surface; a first member disposed on the support surface side in the heat transfer gas supply hole and made of silicon carbide; a second member disposed under the first member in the heat transfer gas supply hole and made of a porous resin; and a third member disposed under the second member in the heat transfer gas supply hole and made of polytetrafluoroethylene (PTFE).

A substrate is held in a substrate holder and accommodated in a treatment chamber. A positive electrode panel is arranged opposite to a surface of the substrate. Process gas is sent from a blower panel, toward the positive electrode panel and the substrate. A positive electrode of a high-frequency power source is connected to the positive electrode panel, and a negative electrode of the high-frequency power source is connected to the blower panel, to apply a high-frequency voltage. The process gas passes between the positive electrode panel and the blower panel which is the negative electrode, so that plasma is generated. The generated plasma removes contaminants on the surface of the substrate.

A substrate processing system includes a multi-zone cooling apparatus to provide cooling for all or substantially all of a window in a substrate processing chamber. In one aspect, the apparatus includes one or more plenums to cover all or substantially all of a window in a substrate processing chamber, including under an energy source for transformer coupled plasma in the substrate processing chamber. One or more air amplifiers and accompanying conduits provide air to the one or more plenums to provide air flow to the window. The conduits are connected to plenum inlets at various distances from the center, to direct airflow throughout the window and thus address center hot, middle hot, and edge hot conditions, depending on the processes being carried out in the chamber. In one aspect, the one or more plenums include a central air inlet, to direct air toward the center portion of the window, to address center hot conditions.

A gas supply system includes first and second gas supply lines, first and second valves, and a controller. The first gas supply line is connected between a process gas source and a substrate processing chamber and has an intermediate node. The second gas supply line is connected between a purge gas source and the intermediate node. The first valve is disposed upstream of the intermediate node on the first gas supply line. The second valve is disposed upstream of the first valve on the first gas supply line. A controller controls the first and second valves to open the first and second valves in a first mode for supplying a process gas from the process gas source to the substrate processing chamber, and close the first and second valves in a second mode for supplying a purge gas from the purge gas source to the substrate processing chamber.

A stage includes a stage body having a placement surface and a radio-frequency electrode embedded in the stage body. The stage body is made of ceramics, and the radio-frequency electrode extends in a thickness direction of the stage body in a region below an outer periphery of the placement surface.

The present invention relates to a substrate supporting member and a substrate processing method. A gas flow path supplying a heat transfer gas to a rear surface of a substrate is provided in the substrate supporting member according to an embodiment of the present invention. Furthermore, a gas flow restricting member restricting gas flow to a different extent from each other according to a direction of the gas flow is provided at the gas flow path or at an external heat transfer gas supply pipe connected to the gas flow path. According to the present invention, by providing the gas flow restricting member restricting the gas flow to a different extent from each other according to the direction of the gas flow, there are effects of minimizing the time required for exhausting the heat transfer gas while preventing the arcing from occurring in a heat transfer gas flow path.

The present disclosure appropriately shortens a processing step for processing a substrate in which a silicon layer and a silicon germanium layer are alternatively laminated. The present disclosure provides a substrate processing method of processing the substrate in which the silicon layer and the silicon germanium layer are alternatively laminated, which includes forming an oxide film by selectively modifying a surface layer of an exposed surface of the silicon germanium layer by using a processing gas including fluorine and oxygen and converted into plasma.