Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus with which low-particle generation can be improved, as well as a semiconductor manufacturing apparatus including the same. A composite structure including a base material and a structure that is provided on the base material and has a surface, in which the structure comprises Y.sub.3Al.sub.5O.sub.12 as a main component, and has an indentation hardness being larger than 8.5 GPa features excellent low-particle generation and is suitably used as a member for a semiconductor apparatus.

A plasma treatment apparatus is provided to suppress plasma from being generated between an antenna conductor and a lid to prevent contamination inside a vacuum chamber and to put an elongated antenna unit to practical use. The plasma treatment apparatus includes a vacuum chamber that accommodates a treatment target; an inductively coupling antenna unit that generates plasma in the vacuum chamber; and a high frequency power source that supplies a high frequency power to the inductively coupling antenna unit. The inductively coupling antenna unit has one or a plurality of antenna conductors and a lid that covers an opening formed in a wall surface of the vacuum chamber, and the one or plurality of antenna conductors are attached to the lid without a gap where discharge may occur.

Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a showerhead. The chambers may include a substrate support. The substrate support may include a platen characterized by a first surface facing the showerhead. The substrate support may include a shaft coupled with the platen along a second surface of the platen opposite the first surface of the platen. The shaft may extend at least partially through the chamber body. A coating may extend conformally about the first surface of the platen. The coating may include a first layer of silicon proximate the first surface of the platen, and may include a second layer of material overlying the first layer of silicon.

A component for use in a plasma processing chamber is provided. The component comprises a component body. A plasma facing surface of the component body is adapted to face a plasma in the plasma processing chamber. The plasma facing surface comprises 1) a layer of silicon doped with a dopant wherein the dopant is at least one of carbon, boron, tungsten, molybdenum, and tantalum, wherein the dopant has a concentration that ranges from 0.01% to 50% by mole percentage, or 2) a layer of carbon doped with a dopant wherein the dopant is at least one of silicon, boron, tungsten, molybdenum, and tantalum, wherein the dopant has a concentration that ranges from 0.01% to 50% by mole percentage, or 3) a layer consisting essentially of boron, or 4) a layer consisting essentially of tantalum.

A component for use in a plasma processing chamber system is START provided. The component for use in a processing chamber system comprises a bulk component body comprising magnesium aluminum oxynitride and sintering aids. The sintering aids comprise at least one of yttria, yttrium aluminate, rare earth metal oxide, and rare earth metal aluminate.

A plasma processing apparatus includes: a placement table serving as a lower electrode and configured to place thereon a workpiece to be subjected to a plasma processing; a DC power supply configured to alternately generate a positive DC voltage and a negative DC voltage to be applied to the placement table; and a controller configured to control an overall operation of the plasma processing apparatus. The controller is configured to: measure a voltage of the workpiece placed on the placement table; calculate, based on the measured voltage of the workpiece, a potential difference between the placement table and the workpiece in a period during which the negative DC voltage is applied to the placement table; and control the DC power supply such that a value of the negative DC voltage applied to the placement table is shifted by a shift amount that decreases the calculated potential difference.

A thin shadow ring for a substrate processing system includes an annular body having an inner diameter and an outer diameter. The inner diameter and the outer diameter define a cross-sectional width of the annular body between the inner diameter and the outer diameter. At least two tabs extend radially outward from the annular body. The cross-sectional width of the annular body between the inner diameter and the outer diameter is less than 1.0 inch.

A component of a processing chamber in a substrate processing system includes a base material comprising aluminum, the base material having one or more surfaces, a diffusion barrier layer formed on the surfaces of the base material, wherein the diffusion barrier layer includes magnesium and fluorine (F), and a coating formed on the surfaces. The diffusion barrier layer is arranged between the surfaces and the coating and the coating includes fluorine.

Methods and apparatus for depositing a coating on a semiconductor manufacturing apparatus component are provided herein. In some embodiments, a method of depositing a coating on a semiconductor manufacturing apparatus component includes: sequentially exposing a semiconductor manufacturing apparatus component including nickel or nickel alloy to an aluminum precursor and a reactant to form an aluminum containing layer on a surface of the semiconductor manufacturing apparatus component by a deposition process.

A plasma reactor is provided, including a process chamber, a plasma antenna assembly configured to generate a plasma in the process chamber, and one or more magnets configured to confine the plasma to a location in the process chamber that is remote from the plasma antenna assembly. The plasma antenna assembly includes a radio frequency (RF) antenna arranged to be driven by a current so as to generate the plasma in a plasma generation region, a housing arranged to separate the antenna from the plasma generated in the plasma generation region, and a ferromagnetic or ferrimagnetic focussing member is arranged to partially surround a length of the antenna.