Some embodiments of the present disclosure, provide a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus includes a chamber, a support and a liner. The chamber is configured for plasma processes and includes a chamber wall. The support is configured to hold a wafer in the chamber. The liner is configured to surround the support and includes a top side and a bottom side. The top side is detachably hung on the chamber wait. The bottom side includes gas passages for plasma particles to pass through the liner.

A liner assembly for a substrate processing system includes a first liner and a second liner. The first liner includes an annular body and an outer peripheral surface including a first fluid guide. The first fluid guide is curved about a circumferential line extending around the first liner. The second liner includes an annular body, an outer rim, an inner rim, a second fluid guide extending between the outer rim and the inner rim, and a plurality of partition walls extending outwardly from the second fluid guide. The second fluid guide is curved about the circumferential line when the first and second liners are positioned within the processing system.

In accordance with this disclosure, there are provided several inventions, including a substrate processing apparatus with multi-layer surfaces configured to face the plasma and resist against corrosion. These multi-layer surfaces may in one example include a base layer of aluminum, anodized aluminum, or quartz, a second layer of stabilized zirconia, and a second layer of a yttrium-aluminum composite such as yttrium aluminum garnet (YAG).

A semiconductor processing apparatus is described that has a body with a wall defining two processing chambers within the body; a passage through the wall forming a fluid coupling between the two processing chambers; a lid removably coupled to the body, the lid having a portal in fluid communication with the passage; a gas activator coupled to the lid outside the processing chambers, the gas activator having an outlet in fluid communication with the portal of the lid; a substrate support disposed in each processing chamber, each substrate support having at least two heating zones, each with an embedded heating element; a gas distributor coupled to the lid facing each substrate support; and a thermal control member coupled to the lid at an edge of each gas distributor.

Disclosed herein are methods for producing an ultra-dense and ultra-smooth ceramic coating. A method includes feeding a solution comprising a metal precursor into a plasma sprayer. The plasma sprayer generates a stream toward an article, forming a ceramic coating on the article upon contact.

An apparatus includes a process chamber, a substrate holder arranged in the process chamber, a first shield provided on the peripheral portion of the substrate holder, and a second shield provided inside the process chamber. The internal space of the process chamber is partitioned into an outer space and a process space to process the substrate, by at least the first shield, the second shield, and the substrate holder. The substrate holder can be driven along a driving direction perpendicular to a substrate holding surface. The length, in a direction parallel to the driving direction, of a minimum gap portion having a minimum size in a direction perpendicular to the driving direction between the first and second shields does not change even if the substrate holder is driven in the driving direction.

A substrate processing system includes a processing chamber including a dielectric window and a substrate support arranged therein to support a substrate. A coil is arranged outside of the processing chamber adjacent to the dielectric window. A Faraday shield is arranged between the coil and the dielectric window. An RF generator is configured to supply RF power to the coil. The faraday shield is coupled by stray capacitance and/or directly coupled to the Faraday shield. A capacitor is connected to one of the coil and the Faraday shield to adjust a position of a voltage standing wave along the coil.

Provided is a reaction chamber for a chemical vapor apparatus. The reaction chamber for a chemical vapor apparatus according to the exemplary embodiment of the present invention includes: a housing having an internal space; a susceptor disposed in the internal space and provided so that a substrate is loaded on an upper surface thereof; a showerhead disposed in the internal space to be placed above the susceptor and provided to spray a process gas toward the substrate side; an inner barrel formed in a hollow shape having an open top, an open bottom, and a predetermined height, and being disposed in the internal space so that an upper edge thereof is positioned at a periphery of the showerhead to enclose the substrate and the susceptor; and a driving part connected to the inner barrel via a power transmission part as a medium, wherein, in case of replacing the susceptor and the substrate, a state of the inner barrel is changed into an open state in which the substrate and the susceptor disposed in the inner barrel are exposed to the outside of the inner barrel by an operation of the driving part.

Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.

Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.