The present invention provides an improved plasma source configuration comprising a vacuum chamber having the source. A dielectric member is in communication with the vacuum chamber and surrounded by the plasma source. A high aspect ratio gap is formed between a film breaker and the dielectric member.

A system, having: an RF power source; an RF matching network electrically coupled to the RF power source; an impedance matching circuit electrically coupled to the RF matching network, wherein the impedance matching circuit has a first adjustable capacitor connected in series with the RF matching network and a second adjustable capacitor connected in parallel with the first capacitor; and an inductive process load electrically coupled to the impedance matching circuit.

Embodiments of the present disclosure disclose a plasma process apparatus with low particle contamination and a method of operating the same, wherein the plasma process apparatus comprises a chamber body and a liner, wherein a dielectric window is provided above the liner; the chamber body, the liner, and the dielectric window enclose a reaction space; a base for placing a wafer is provided at a bottom portion inside the reaction space; a vacuum pump device for pumping a gas out of the reaction space and maintaining a low pressure therein is provided below the base; a shutter for shuttering between an opening on a chamber body sidewall and an opening on a liner sidewall is provided inside the chamber body, for blocking contamination particles in the gas from flowing from a transfer module to the reaction space; a groove is provided at a lower portion of the liner, wherein a flowing space enclosed by a liner outer wall below the shutter and a chamber body inner wall is in communication with an inner space of the liner via the groove to form a gas flow path, such that the contamination particles entering the flowing space are pumped away by the vacuum pump device via the gas flow path. The present disclosure may not only keep the current wafer free from being contaminated, but also may reduce contamination for a next wafer transfer; besides, it enables introduction of clean air to make the contamination particles carried out of the reaction space with a more significant effect and a higher efficiency.

A film forming method for forming a film on a pattern and cleaning a space of a processing container configured to perform therein a plasma processing under a reduced pressure environment. The space is provided with a pedestal and an upper electrode configured to supply radio-frequency power. The upper electrode is disposed in the space to face the pedestal. The method includes: placing a substrate having the pattern on the pedestal provided in the space of the processing container configured to perform therein a plasma processing under a reduced pressure environment; adjusting temperature of a main surface of the substrate for each of a plurality of regions on the main surface of the substrate; and after the adjusting with the substrate on the pedestal, repeating an ordered sequence of a first step of forming a deposition film on the pattern of the substrate and on an inner surface of the processing container, wherein the inner surface includes an inner surface of the upper electrode; and a second step of supplying electric power only to the upper electrode to generate plasma in the space, thereby cleaning the space and the inner surface.

A component for use as part of a plasma processing chamber is provided. The component has a component body adapted for use as part of a plasma processing chamber. A first ceramic coating of a ceramic material is on a surface of the component body, wherein the first ceramic coating has a first side adjacent to the component body and a second side spaced apart from the component body and wherein the first ceramic coating has a porosity and density. A second ceramic coating of the ceramic material is on the second side of the first ceramic coating, wherein the second ceramic coating has a porosity that is less than the porosity of the first ceramic coating and the second ceramic coating has a density that is greater than the density of the first ceramic coating.

To provide perfluoroelastomer molded product and a protective member, excellent in plasma resistance and fitting property.

A perfluoroelastomer molded product containing no carbon black, and having a shore A hardness of 25 or more and 60 or less, and a protective member comprising the perfluoroelastomer molded product.

A plasma processing method, including: a trenched substrate preparation process of preparing a trenched substrate having trenches having a bottom exposing an oxide film; and an oxide film removal process of exposing the trenched substrate to a plasma, to remove the oxide film. The oxide film removal process includes a plurality of cycles, each cycle including: an oxide film etching step of etching the oxide film; and a cleaning step of removing an attached matter on inner walls of the trenches, after the oxide film etching step.

A gas-phase chemical reactor, a system including the reactor, and methods of using the reactor and system are disclosed. An exemplary reactor includes a reaction chamber and is configured to provide a precursor within the reaction chamber for a soak period—e.g., a period wherein a supply of the precursor to the reaction chamber is ceased and before purging of the reaction chamber begins. This allows relatively high residence times, relatively high partial pressures of the precursor(s) and/or a relatively high absolute pressure to be obtained within the reaction chamber during substrate processing.

A plasma processing method including: a process of placing a work piece on a stage provided in a chamber, the work piece including a substrate and a holding member having an adhesive layer on a surface and holding the substrate via the adhesive layer, and having an exposed portion where the adhesive layer is exposed outside the substrate; and a plasma etching process of etching the substrate with a plasma generated in the chamber, with the exposed portion exposed to the plasma. In response to occurrence of an interruption in the plasma etching process, a cleaning process of exposing a surface of the substrate to a plasma containing an oxidizing gas is performed, and then the plasma etching process is resumed.

Embodiments of the disclosure relate to articles, coated chamber components, methods of coating chamber components and systems with a metal fluoride coating that includes at least one metal fluoride having a formula of M1.sub.xF.sub.w, M1.sub.xM2.sub.yF.sub.w or M1.sub.xM2.sub.yM3.sub.zF.sub.w, where at least one of M1, M2, or M3 is nickel. The metal fluoride coating can be formed directly on a substrate or on a coating of a substrate.