The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a process chamber provided with a reaction space and having at least one insulation member exposed to the reaction space; a substrate support member for supporting a substate at the reaction space; a gas supply member for selectively supplying a passivation gas or a process gas to the reaction space; a plasma source for exciting the passivation gas or the process gas to a plasma; and a controller for controlling the gas supply member and the plasma source, and wherein the controller controls the gas supply member and the plasma source so the passivation gas is supplied to the reaction space and a supplied passivation gas is excited to the plasma, in a state at which the substrate is not taken into the reaction space.

Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.

A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 μm or more and 0.1 μm or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 μm or more and 48 μm or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.

A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

A plasma processing method which can realize a reduction of process variation in the first one of lot processing includes a first step of supplying gas to a processing chamber and a second step of etching the sample by using plasma after the first step. The gas is a gas containing a carbon element and a hydrogen element, a gas containing a chlorine element, or a mixed gas containing all of the gases used in the second step.

Methods for etching a semiconductor structure and for conditioning a processing reactor in which a single semiconductor structure is treated are disclosed. An engineered polycrystalline silicon surface layer is deposited on a susceptor which supports the semiconductor structure. The polycrystalline silicon surface layer may be engineered by controlling the temperature at which the layer is deposited, by grooving the polycrystalline silicon surface layer or by controlling the thickness of the polycrystalline silicon surface layer.

A chamber cleaning method in accordance with an exemplary embodiment includes a chamber stabilizing process for transporting a substrate, on which a thin film deposition process has been completed, out of a chamber and processing an inside of the chamber, wherein the chamber stabilizing process includes: a cleaning process for injecting a cleaning gas into the chamber and etching and cleaning byproducts generated by the thin film deposition; and a coating process for injecting a gas including at least one among aluminum (Al), zirconium (Zr) or hafnium (Hf) into the chamber, and generating a protective film on an inner wall of the chamber and at least one surface of components installed inside the chamber.

A chamber component comprises a body and a plasma sprayed ceramic coating on the body. The plasma sprayed ceramic coating is applied using a method that includes feeding powder comprising a yttrium oxide containing solid solution into a plasma spraying system, wherein the powder comprises a majority of donut-shaped particles, each of the donut-shaped particles having a spherical body with indentations on opposite sides of the spherical body. The method further includes plasma spray coating the body to apply a ceramic coating onto the body, wherein the ceramic coating comprises the yttrium oxide containing solid solution, wherein the donut-shaped particles cause the ceramic coating to have an improved morphology and a decreased porosity as compared to powder particles of other shapes, wherein the improved surface morphology comprises a reduced amount of surface nodules.

A sputtering chamber component including a front surface, a back surface opposite the front surface, and a sputter trap formed on at least a portion of the back surface, and a coating of metallic particles formed on the sputter trap. The coating has a thickness from about 0.025 mm to about 2.54 mm (0.001 inches to about 0.1 inches) and is substantially free of impurities, and the particles of the coating are substantially diffused.

Methods of semiconductor processing may include performing a first plasma treatment within a processing chamber to remove a first carbon-containing material. The methods may include performing a second plasma treatment within the processing chamber to remove a first silicon-containing material. The methods may include depositing a second silicon-containing material on surfaces of the processing chamber. The methods may include depositing a second carbon-containing material overlying the second silicon-containing material.