Described herein are articles, systems and methods where a halogen resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The halogen resistant coating has an optional amorphous seed layer and a transition metal-containing layer. The halogen resistant coating uniformly covers features of the chamber component, such as those having an aspect ratio of about 3:1 to about 300:1.

Plasma processing chamber is provided where the plasma processing chamber has a first component. A first plurality of multilayers is disposed over the first component, wherein each multilayer comprises a process layer and a conditioning layer adjacent to the process layer, wherein the process layer is more etch resistant to a processing plasma than the conditioning layer and wherein the conditioning layer is configured to be selectively etched with respect to the process layer; and wherein the process layer is configured to be selectively etched with respect to the conditioning layer.

A plasma processing apparatus includes: a processing chamber disposed inside a vacuum container and in which plasma is formed; and a member which is a member forming an inner wall surface of the processing chamber and is disposed on a surface to be exposed to the plasma and has a coating film formed by spraying of yttrium fluoride or a material containing the yttrium fluoride. A ratio of an orthorhombic crystal of the yttrium fluoride or the material containing the yttrium fluoride forming the coating film relative to the entirety is 60% or more.

A component for use in a plasma processing chamber is provided. A component body has a plasma facing surface. A coating is over the plasma facing surface, wherein the coating is formed by a method comprising spraying a surface of the component body with a spray formed from atomic layer deposition (ALD) coated particles to form the coating.

There is provided a reinforcing structure in which a plurality of beam members provided on a top surface of a cover of a vacuum chamber for performing predetermined processing on a substrate is combined to reinforce the cover. The reinforcing structure includes a ring-shaped portion formed by arranging beam members in a ring shape at a central region of the top surface of the cover, and a radial portion formed by radially extending beam members from the ring-shaped portion.

An article comprises a body and at least one protective layer on at least one surface of the body. The at least one protective layer is a thin film having a thickness of less than approximately 20 microns that comprises a ceramic selected from a group consisting of Y.sub.3Al.sub.5O.sub.12, Y.sub.4Al.sub.2O.sub.9, Er.sub.2O.sub.3, Gd.sub.2O.sub.3, Er.sub.3Al.sub.5O.sub.12, Gd.sub.3Al.sub.5O.sub.12 and a ceramic compound comprising Y.sub.4Al.sub.2O.sub.9 and a solid-solution of Y.sub.2O.sub.3—ZrO.sub.2.

Processing chamber components and methods of manufacture of same are provided herein. In some embodiments, a component part body includes a component part body having a base plane and at least one textured surface region, wherein the at least one textured surface region comprises a plurality of independent surface features having a first side having at least a 45 degree angle with respect to the base plane. In at least some embodiments, the textured surface includes a plurality of independent surface features which are pore free.

An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

A chamber component for a process chamber comprises a ceramic body and one or more protective layer on at least one surface of the ceramic body, wherein the one or more protective layer comprises Y.sub.3Al.sub.5O.sub.12 having a dielectric constant of 9.76+/−up to 30% and a hermiticity of 4.4E-10 cm.sup.3/s+/−up to 30%.

Provided is a processing component of equipment for manufacturing a semiconductor or a display. A ceramic coated film is formed on a surface of a body of the processing component, in a state in which some or the entirety of valleys and peaks are removed, such that a surface roughness Rz, which is expressed as an absolute value (P1+P2+P3+P4+P5)/5−(V1+V2+V3+V4+V5)/5 corresponding to a difference between an average of distances between the deepest five valleys V1, V2, V3, V4 and V5 in a section in which the surface roughness is measured and an arbitrary datum line that is parallel to a center line at which an area of peaks and an area of valleys are equal to each other in the section in which the surface roughness is measured and an average of distances between the highest five peaks P1, P2, P3, P4 and P5 in the section in which the surface roughness is measured and the arbitrary datum line, is lower than 5.0 μm.