An apparatus for forming a film on a substrate includes: a processing container in which a reaction gas is supplied to a surface of the substrate; a stage installed in the processing container, configured to place the substrate and including a heater; a lifting shaft connected to an external lifting mechanism via a through port formed in the processing container; a casing installed between the processing container and the lifting mechanism and covering the lifting shaft; a lid member disposed to surround the lifting shaft with a gap interposed between the lifting shaft and the lid member, and installed in the processing container; a purge gas supplier configured to supply a purge gas into the casing; and a guide member disposed at a position facing the gap that opens toward an interior of the processing container and including a guide surface configured to guide the purge gas.

An apparatus and a method for manufacturing a display device are provided. The apparatus includes a plasma generator disposed outside a chamber, an adapter of the chamber, the adapter connecting the plasma generator to the chamber, a cooler connected to the adapter, an insulator connected to the cooler, and a diffuser connected to the insulator. A plasma generated by the plasma generator is supplied into the chamber through a flow path passing through the adapter, the cooler, the insulator, and the diffuser.

To reduce the damage caused due to the degradation of sealing material without complicating the structure of the vacuum sealing material of the vacuum container and to perform cleaning without affecting the lifetime of the sealing material in a plasma processing apparatus, this invention provides a plasma processing apparatus in which a window portion and a processing chamber are coupled to each other with an elastomeric sealing material sandwiched therebetween, and a sealing material is arranged at a position where a ratio of a distance from the inner wall surface of a processing chamber in an interstice portion to the sealing material with respect to the interstice between the window portion and the processing chamber having the sealing material sandwiched there between is 3 or more, in a vacuum state with the air exhausted from the processing chamber by the vacuum exhaust unit.

The present invention provides a plasma generating system that includes: a waveguide; a plasma cavity coupled to the waveguide and configured to generate a plasma therewithin by use of microwave energy; a hollow cylinder protruding from a wall of the waveguide and having a bottom cap that has an aperture; a detection unit for receiving the light emitted by the plasma through the aperture and configured to measure intensities of the light in an ultraviolet (UV) range and an infrared (IR) range; and a controller for controlling the detection unit.

The present invention provides a plasma generating system that includes: a waveguide; a plasma cavity coupled to the waveguide and configured to generate a plasma therewithin by use of microwave energy; a hollow cylinder protruding from a wall of the waveguide and having a bottom cap that has an aperture; a detection unit for receiving the light emitted by the plasma through the aperture and configured to measure intensities of the light in an ultraviolet (UV) range and an infrared (IR) range; and a controller for controlling the detection unit.

Disclosed are a lift pin assembly, an electrostatic chuck with the lift pin assembly, and a processing apparatus where the electrostatic chuck is located. The lift pin assembly comprises: a lift pin, a lift pin receiving channel connected to a pressure control device, one end of the lift pin receiving channel proximal to a wafer being provided with a sealing ring, an upper surface of the sealing ring being in contact with a back face of the wafer during processing to avoid a gas at the back face of the wafer from entering the lift pin receiving channel, thereby enabling the pressure control device to independently control the pressure in the lift pin receiving channel.

A plasma processing apparatus for performing plasma processing on a substrate includes: a plasma generator configured to generate plasma in a processing container; a support structure configured to mount the substrate on a tilted mounting surface in the processing container and rotatably support the substrate; a first slit plate made of quartz and provided between the plasma generator and the support structure, the first slit plate having first slits formed in the first slit plate; and a second slit plate made of quartz and provided between the plasma generator and the support structure and below the first slit plate, the second slit plate having second slits formed in the second slit plate, wherein the first slits are staggered from adjacent ones of the second slits in a reverse direction of a tilting direction of the mounting surface.

A substrate processing method includes a protective film forming step, an insulating material depositing step, a protective film removing step, and a metal material depositing step. In the protective film forming step, a protective film is formed on a metal film among the metal film and an insulating film exposed on the surface of a substrate, using a film-forming material that is selectively adsorbed onto the metal film. In the insulating material depositing step, after the protective film forming step, an insulating material is deposited on the surface of the insulating film using an atomic layer deposition method. In the protective film removing step, the protective film is removed from the surface of the metal film after the insulating material depositing step. In the metal material depositing step, a metal material is deposited on the metal film after the protective film removing step.

Methods of depositing silicon nitride on a surface of a substrate are disclosed. The methods include using an intermediate treatment process to increase a quality of the silicon nitride layer and a second treatment process.

The inventive concept provides an apparatus for treating a substrate. A substrate treatment apparatus according to an embodiment includes a housing having a treatment space in which the substrate is treated, a support unit that supports the substrate in the treatment space, and a gas supply unit that supplies a gas to the treatment space, wherein a heat transfer flow path that supplies a heat transfer medium to the substrate supported by the support unit, a pin hole defining an elevation path of a lift pin that elevates the substrate supported by the support unit, and a connection portion allowing the heat transfer flow path and the pin hole to be in communication with each other are formed inside the support unit, and the connection portion includes a porous structure.