Plasma strip tools with process uniformity control are provided. In one example implementation, a plasma processing apparatus includes a processing chamber, a first pedestal in the processing chamber operable to support a workpiece, and a second pedestal in the processing chamber operable to support another workpiece. The first pedestal can define a first processing station. The second pedestal can define a second processing station. The apparatus can further include a first plasma chamber disposed above the first processing station and a second plasma chamber disposed above the second processing station. The first plasma chamber can be associated with a first inductive plasma source. The first plasma chamber can be separated from the processing chamber by a first separation grid. The second plasma chamber can be associated with a second inductive plasma source. The second plasma chamber can be separated from the processing chamber by a second separation grid.

Process kits, processing chambers, and methods for processing a substrate are provided. The process kit includes an edge ring, an adjustable tuning ring, and an actuating mechanism. The edge ring has a first ring component interfaced with a second ring component that is movable relative to the first ring component forming a gap therebetween. A lower surface of the second ring component contains an upper alignment coupling and an upper surface of the adjustable tuning ring contains a lower alignment coupling. The lower alignment coupling of the adjustable tuning ring is configured to mate with the upper alignment coupling of the second ring component to form an interface. The actuating mechanism is interfaced with the lower surface of the adjustable tuning ring. The actuating mechanism is configured to actuate the adjustable tuning ring such that the gap between the first ring component and the second ring component is varied.

A method of modifying a surface of a medical device for implantation or disposition inside a patient is described. The medical device comprises a structure having at least one surface. The method includes the steps of: placing the medical device into a plasma chamber substantially free from contaminants and substantially sealing the plasma chamber from the atmosphere; removing at least an outermost layer of any oxide layer from the at least one surface of the structure by a plasma oxide-removal process, whilst maintaining the plasma chamber under seal from the atmosphere; and subsequently forming a new oxide layer at the least one surface of the structure by introducing at least one gas into the plasma chamber, whilst maintaining the plasma chamber under seal from the atmosphere. A medical device including a bulk material and an oxide layer disposed over at least one surface of the medical device. The oxide layer is substantially pure and free from contaminants.

Embodiments of the present disclosure disclose a plasma process apparatus with low particle contamination and a method of operating the same, wherein the plasma process apparatus comprises a chamber body and a liner, wherein a dielectric window is provided above the liner; the chamber body, the liner, and the dielectric window enclose a reaction space; a base for placing a wafer is provided at a bottom portion inside the reaction space; a vacuum pump device for pumping a gas out of the reaction space and maintaining a low pressure therein is provided below the base; a shutter for shuttering between an opening on a chamber body sidewall and an opening on a liner sidewall is provided inside the chamber body, for blocking contamination particles in the gas from flowing from a transfer module to the reaction space; a groove is provided at a lower portion of the liner, wherein a flowing space enclosed by a liner outer wall below the shutter and a chamber body inner wall is in communication with an inner space of the liner via the groove to form a gas flow path, such that the contamination particles entering the flowing space are pumped away by the vacuum pump device via the gas flow path. The present disclosure may not only keep the current wafer free from being contaminated, but also may reduce contamination for a next wafer transfer; besides, it enables introduction of clean air to make the contamination particles carried out of the reaction space with a more significant effect and a higher efficiency.

A reactive particles supply system that may include an adjustable gas supply unit that is arranged to supply gas and to set a gas condition, a reactive particles supply unit that may be arranged to receive the gas, and an adjustable reactive particles output unit that may include a reactive particles input, a second reactive particles output, and a reactive particles path. The second reactive particles output is configured to output reactive particles towards an opening of a vacuumed chamber. The adjustable reactive particles output unit is arranged to mechanically configure at least one element of the reactive particles path according to the reactive particles condition.

A light emitting sealed body includes a housing which stores a discharge gas in an internal space and is provided with a first window portion to which first light is incident and a second window portion from which second light is emitted. The housing includes at least one flow path which is partitioned from the internal space and extends toward at least one of the first window portion and the second window portion.

A plasma processing apparatus capable of achieving a uniform plasma space therein is provided. The plasma processing apparatus includes a processing vessel, a mounting table, a shield member, a shutter for an opening configured to be moved up and down, a first driving unit and a second driving unit. The processing vessel has a sidewall, and the sidewall is provided with a transfer path through which a processing target object is carried-in/carried-out. The mounting table is provided within the processing vessel. The shield member is provided along an inner surface of the sidewall to surround the mounting table and provided with an opening facing the transfer path. The first driving unit is configured to move the shutter up and down. The second driving unit is configured to move the shutter in a forward-backward direction with respect to the shield member.

A processing chamber and method of etching a semi-conductor substrate are presented. The processing chamber is symmetric, with the centerlines of a chuck and stem of a stage to retain a semi-conductor substrate aligned with a centerline of a passage in a core of a pump used to evacuate the processing chamber and with a center-line of a gas port through which gas is introduced to the processing chamber. The stem extends through the passage and a spiral groove is formed in the passage in only one of the stem or an inner surface of the core to provide pumping action to counter back streaming of the gas from an exhaust of the pump in an intermediate and viscous flow regime inside a gap between the stem and the core.

In an example, a showerhead pedestal assembly for a substrate processing chamber is provided. The showerhead pedestal assembly includes a faceplate. A platen is disposed within the faceplate and includes a heater element extending through at least one groove in the faceplate. The at least one groove is profiled to accept at least one portion of the heater element. A periphery of the platen is joined to an interior surface of the faceplate by a friction stir welded joint.

According to one aspect of the technique of the present disclosure, there is provided a seal structure capable of sealing a space between a first structure heated by a heater and a second structure arranged so as to face the first structure, the seal structure including: a metal plate arranged in contact with the first structure; and a sealing material made of a resin material and arranged in contact with the metal plate and the second structure, wherein the space between the first structure and the second structure is sealed by the metal plate and the sealing material.