A substrate support includes an electrostatic chuck formed of ceramics and holding a substrate by electrostatic attraction, a base supporting the electrostatic chuck, and a flow path through which a heat exchange medium flows. An upper surface of the flow path is formed of ceramics.

Embodiments disclosed herein include a plasma source. In an embodiment, a plasma source comprises a dielectric body with a top surface, a bottom surface, and sidewall surfaces. In an embodiment, a plurality of holes pass through the dielectric body, where a first set of holes pass from the top surface to the bottom surface, and a second set of holes pass between opposite sidewall surfaces. In an embodiment, a housing is around the dielectric body, and a monopole antenna extending into the dielectric body.

A substrate processing system includes a multi-zone cooling apparatus to provide cooling for all or substantially all of a window in a substrate processing chamber. In one aspect, the apparatus includes one or more plenums to cover all or substantially all of a window in a substrate processing chamber, including under an energy source for transformer coupled plasma in the substrate processing chamber. One or more air amplifiers and accompanying conduits provide air to the one or more plenums to provide air flow to the window. The conduits are connected to plenum inlets at various distances from the center, to direct airflow throughout the window and thus address center hot, middle hot, and edge hot conditions, depending on the processes being carried out in the chamber. In one aspect, the one or more plenums include a central air inlet, to direct air toward the center portion of the window, to address center hot conditions.

Provided is a substrate processing system for improving productivity of processes. In this regard, the substrate processing system includes: a first chamber providing a space where at least one substrate is accommodated; a second chamber configured to transfer at least one substrate to the first chamber; and a temperature control unit configured to change a temperature of a gas in the second chamber.

Disclosed herein is an apparatus for processing a substrate using an inductively coupled plasma source. An inductively coupled plasma source utilizes a power source, a shield member, and a coil coupled to the power source. In certain embodiments, the coils are arranged with a horizontal spiral grouping and a vertical extending helical grouping. The shield member, according to certain embodiments, utilizes a grounding member to function as a Faraday shield. The embodiments herein reduce parasitic losses and instabilities in the plasma created by the inductively coupled plasma in the substrate processing system.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having an inner space; a plasma source configured to apply an electric field; a first gas supply unit configured to supply a first process gas to a region to which the plasma source applies the electric field, the first process gas excited to a plasma when the first process gas is applied with an electric field of a first intensity at a first pressure atmosphere; a support unit disposed in the inner space and configured to support a substrate to be treated; and an electrodeless lamp disposed above the substrate in the inner space, and wherein the electrodeless lamp includes an electric field transmissive housing having a discharging space therein; and a discharging material including a luminous material and filling the discharging space, the discharging space of the housing being pressurized to a second pressure, and the discharging material discharging and luminating when applied with an electric field of a second intensity higher than the first intensity at a second pressure.

A temperature control method of a chamber of a plasma processing apparatus includes: (a) providing a substrate in the chamber; (b) measuring a pre-processing temperature of an internal component of the chamber; (c) determining a temperature control condition based on a difference between the pre-processing temperature measured in (b) and a target temperature that has been preset in advance; (d) performing a process including at least one of increasing the temperature of the internal component by a first plasma of a first processing gas and cooling the internal component by purging the chamber with a cooling gas, based on the temperature control condition; and (e) processing the substrate with a second plasma of a second processing gas.

Embodiments described herein generally related to a substrate processing apparatus, and more specifically to an improved showerhead assembly for a substrate processing apparatus. The showerhead assembly includes a chill plate, a gas plate, and a gas distribution plate having a top surface and a bottom surface. A plurality of protruded features contacts the top surface of the gas distribution plate. A fastener and an energy storage structure is provided on the protruded features. The energy storage structure is compressed by the fastener and axially loads at least one of the protruded features to compress the chill plate, the gas plate and the gas distribution plate.

A semiconductor manufacturing apparatus includes a process chamber. An insulating plate divides an interior space of the process chamber into a first space and a second space and thermally isolates the first space from the second space. A gas supplier is configured to supply a process gas to the first space. A radiator is configured to heat the first space. A stage is disposed within the second space and the stage is configured to support a substrate.

The present disclosure relates to a plasma generation system with a dielectric window, an inductive coil disposed on the dielectric window, a gas distribution element disposed on the dielectric window, and a gas conditioning system coupled to the gas distribution element. The gas distribution element is configured to discharge a thermally conditioned gas on the dielectric window and regulate a temperature across the dielectric window. The gas conditioning system is configured to supply the thermally conditioned gas to the gas distribution element.