A Faraday shielding apparatus includes a Faraday shielding plate and a resistance wire attached to the lower end of the Faraday shielding plate; the Faraday shielding plate includes a conductive ring and a plurality of conductive petal-shaped members radially symmetrically connected to the outer periphery of the conductive ring; and an insulating and thermally conductivity layer is on the outer surface of the resistance wire. During the etching process, the heating circuit and the resistance wire are conductively connected, increasing the temperature of the resistance wire when it is energized. The Faraday shielding plate is between a radio frequency coil and the resistance wire to form a shield. The output terminal of the heating power supply is filtered by way of a filter circuit unit, then is connected to the resistance wire, preventing coupling between the radio frequency coil and the resistance wire.

A cooling assembly includes a first subassembly and a second subassembly. The first subassembly is coupled to a showerhead of a substrate processing system. The first subassembly including a plurality of passages proximate to and in thermal communication with the showerhead. The second subassembly is removably coupled to the first subassembly. The second subassembly includes a plurality of protrusions that align with the plurality of passages, respectively.

There is provided a reinforcing structure in which a plurality of beam members provided on a top surface of a cover of a vacuum chamber for performing predetermined processing on a substrate is combined to reinforce the cover. The reinforcing structure includes a ring-shaped portion formed by arranging beam members in a ring shape at a central region of the top surface of the cover, and a radial portion formed by radially extending beam members from the ring-shaped portion.

Disclosed is a method of treating a substrate by using a substrate treating apparatus generating plasma in a treatment space by applying microwaves, the method including: a plasma treatment operation of treating a substrate with the plasma; a replacement operation in which the plasma treatment operation is performed a preset number of times and a component included in the substrate treating apparatus is replaced; and a backup operation of backing up the substrate treating apparatus after the replacement operation, in which the backup operation includes a bake purge operation for removing byproducts present in the component.

A substrate treating apparatus includes a process treating unit providing a treating space for treating a substrate and a plasma generation unit provided above the process treating unit and generating a plasma from a process gas. The plasma generation unit includes a plasma chamber having a discharge space formed therein, an antenna surrounding an outside of the plasma chamber and flowing a high frequency current therethrough, and a cover member surrounding an outside of the antenna, and wherein the cover member is grounded.

A circulating cooling/heating device that is configured to cool and heat a circulating fluid supplied to a chamber in plasma-etching equipment includes: a reservoir configured to store the circulating fluid; a pump configured to circulate the circulating fluid between the reservoir and the chamber; a heat exchanger configured to perform heat exchange between the circulating fluid and a cooling water, the heat exchanger being immersed in the circulating fluid stored in the reservoir; and a heater configured to heat the circulating fluid in the reservoir.

A method of selectively forming a cover layer is provided. The method includes exposing a surface of a metal feature and a surface of a dielectric layer to a plasma treatment, and exposing the surface of a metal feature and a surface of a dielectric layer to an inhibitor species to form an inhibitor layer selectively on the surface of the metal feature. The method further includes polymerizing the inhibitor layer to form an inhibiting film, and forming the cover layer on the surface of the dielectric layer.

A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.

Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing substrates includes a chamber body enclosing a processing volume, the chamber body comprising a chamber floor, a chamber wall coupled to the chamber floor, and a chamber lid removably coupled to the chamber wall, wherein at least one of the chamber floor, the chamber wall, and the chamber lid comprise passages for a flow of a thermal control media; a heater plate disposed adjacent to and spaced apart from the chamber floor; a sleeve disposed adjacent to and spaced apart from the chamber wall, the sleeve supported by the heater plate; and a first sealing element disposed at a first interface between the chamber wall and the chamber lid.

A method of etching a substrate that includes: generating a first plasma from a first gas flowing into a first chamber by applying a first power pulse to a first electrode located in the first chamber over a first time duration; and forming a recess in a substrate located in a second chamber, the forming including: providing radicals from the first chamber into the second chamber; applying a plurality of second power pulses to a second electrode located in the second chamber during a second time duration to generate a second plasma in the second chamber from a second gas flowing into the second chamber, the first chamber being pressurized higher than the second chamber; and applying a plurality of third power pulses to a third electrode located in the second chamber during a third time duration to accelerate ions of the second plasma.