A component for use as part of a plasma processing chamber for processing a wafer is provided. The component comprises a component body of silicon carbide doped with at least one of tungsten, tantalum, or boron.

Disclosed are a ceramic structure, a lower electrode, and a dry etching machine. The ceramic structure includes at least two ceramic plates, and a clamping slot and a boss are arranged on one side of each ceramic plate close to a neighboring ceramic plate. In two neighboring ceramic plates, a boss of one ceramic plate is clamped into a clamping slot of the other ceramic plate, so that no through gap is generated between the two neighboring ceramic plates in a thickness direction.

A system and method for reducing particle contamination on substrates during a deposition process using a particle control system is disclosed here. In one embodiment, a film deposition system includes: a processing chamber sealable to create a pressurized environment and configured to contain a plasma, a target and a substrate in the pressurized environment; and a particle control unit, wherein the particle control unit is configured to provide an external force to each of at least one charged atom and at least one contamination particle in the plasma, wherein the at least one charged atom and the at last one contamination particle are generated by the target when it is in direct contact with the plasma, wherein the external force is configured to direct the at least one charged atom to a top surface of the substrate and to direct the at least one contamination particle away from the top surface of the substrate.

A method includes anisotropically etching an etching target layer of a target object through an opening of the target object by generating plasma of a first gas within a processing vessel in which the target object is accommodated; and then forming a film on an inner surface of the opening by repeating a sequence comprising: a first process of supplying a second gas into the processing vessel; a second process of purging a space within the processing vessel; a third process of generating plasma of a third gas containing an oxygen atom within the processing vessel; and a fourth process of purging the space within the processing vessel. The first gas contains a carbon atom and a fluorine atom. The second gas contains an aminosilane-based gas. The etching target layer is a hydrophilic insulating layer containing silicon. Plasma of the first gas is not generated in the first process.

Methods for fabricating gas discharge tubes. In some embodiments, a method for fabricating a gas discharge tube (GDT) device can include providing or forming an insulator substrate having first and second sides and defining an opening. The method can further include providing or forming a first electrode and a second electrode. The method can further include forming a first glass seal between the first electrode and the first side of the insulator substrate, and a second glass seal between the second electrode and the second side of the insulator substrate, such that the first and second glass seals provide a hermetic seal for a chamber defined by the opening and the first and second electrodes.

According to the present invention, an electrode plate for a plasma processing apparatus is provided, which includes an air hole through which a gas for plasma generation passes, the electrode plate for a plasma processing apparatus including: a base; and a coating layer provided on at least one front surface of the base, and in which the base is formed of a material having a plasma resistance higher than the plasma resistance of a material forming the coating layer.

A member for a plasma processing device includes: an aluminum base material; and an oxide film formed on the aluminum base material and having a porous structure, the oxide film including a first oxide film formed on a surface of the aluminum base material, a second oxide film formed on the first oxide film, and a third oxide film formed on the second oxide film, wherein the first oxide film is harder than the second oxide film and the third oxide film, and a hole formed in each of the first oxide film, the second oxide film and the third oxide film is sealed.

Provided is a vapor deposition apparatus including: a plasma generator configured to change at least a portion of a first raw material gas into a radical form; a corresponding surface corresponding to the plasma generator; a reaction space between the plasma generator and the corresponding surface; and an insulating member separated from, and surrounding the plasma generator.

A method of etching uses an overhead electron beam source that generates an ion-ion plasma for performing an atomic layer etch process.

A vacuum arc source for arc evaporation of boride includes: a cathode made of at least 90 at-% of boride, in particular made of more than 98 at-% of boride; an anode, which is preferably in the shape of a disk; a body made of a material which is less preferred by arc discharge compared to the cathode, the body surrounding the cathode in such a way that during operation of the vacuum arc source, movement of an arc on an arc surface of the cathode is limited by the body. At least 90 at-% of the material of the anode is of the same chemical composition as the cathode.