Provided are a polycrystalline SiC compact capable of achieving uniform plasma etching when used as electrodes and a method for manufacturing the same. A polycrystalline SiC compact has a major surface in which Wa (0 to 10 mm) is 0.00 to 0.05 m or less, Wa (10 to 20 mm) is 0.13 m or less, and Wa (20 to 30 mm) is 0.20 m or less.

A plasma generation device for generating a plasma comprises a support having a first side and an opposing second side. The support is comprised of a ceramic matrix and a split-ring conductor is embedded in the ceramic matrix. A hermetically sealed via extends from the split-ring conductor to the second side of the support and connects to an electrical supply. A ground plane is formed on the second side of the support. A plasma is generated proximate to the first side of the support, and the support seals to a wall of the chamber such that the first side is exposed to the one or more gases inside the chamber and the second side is isolated from the plasma and the one or more gases inside of the chamber.

Embodiments of the present disclosure generally relate to an apparatus and method for reducing particle generation in a processing chamber. In one embodiment, an apparatus for processing a substrate is disclosed. The apparatus includes a chamber body, a lid assembly disposed above the chamber body, the lid assembly comprising a top electrode and a bottom electrode positioned substantially parallel to the top electrode, a gas distribution plate disposed between a substrate processing region and the lid assembly, and a substrate support disposed within the chamber body, the substrate support supporting having a substrate supporting surface, wherein the top electrode is in electrical communication with a radio frequency (RF) power supply and a DC bias modulation configuration, and the DC bias modulation configuration is configured to operate the top electrode at a constant zero DC bias voltage during a process.

Systems and methods for tuning to reduce reflected power in multiple states are described. The methods include determining values of one or more parameters of an impedance matching circuit so that reflected power is reduced for multiple states. Such a reduction in the reflected power increases a life of a radio frequency generator coupled to the impedance matching circuit while simultaneously processing a substrate using the multiple states.

A plasma processing apparatus includes a plasma generator provided with a plasma electrode and performs plasma processing on a substrate accommodated in a processing container. At least a region corresponding to the plasma electrode of the plasma generator is formed of synthetic quartz.

In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.

A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.

A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

Various examples are provided related to catalytic nanofiber membrane assemblies or structures which can be used in plasma reactors. In one example, a three-dimensional (3D) catalytic structure includes nanofiber-based elements (NFBEs) and electrodes placed about the NFBEs with the NFBEs stacked between the electrodes. In another example, a plasma reactor includes a vessel containing the 3D catalytic structure where gas pressure in the vessel is less than 1 atmosphere.

Disclosed is a substrate processing apparatus. The substrate processing apparatus comprises a process chamber providing an inner space where a substrate is treated, a support unit disposed in the inner space and supporting the substrate, and a gas supply unit providing the inner space with a process gas required for generating plasma. The support unit comprises a base having a top surface on which the substrate is placed, a heater disposed in the base, and a coating layer formed on the top surface of the base.