A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode.

An upper electrode disclosed configures a shower head in a capacitively-coupled plasma processing apparatus. The upper electrode includes a first member and a first member. The first member includes a conductor. The first member provides a plurality of first holes. The plurality of first holes penetrate the first member. The second member includes a main body and a cover layer. The main body includes a conductor and is provided above the first member. The cover layer covers the surface of the main body. The second member provides one or more second holes. The secondary electron emission coefficient of the cover layer is smaller than 1.

A method and apparatus for reproducing a component of a semiconductor manufacturing apparatus, and a reproduced component are provided. The method may include a preparing step of preparing a damaged component of a semiconductor manufacturing apparatus, a first cleaning step of cleaning the damaged component, a masking step of masking at least one of areas including an undamaged part of the damaged component, a reproduced part forming step of forming a reproduced part on the damaged component using a chemical vapor deposition (CVD), a post-grinding step of grinding the damaged component with the reproduced part, and a second cleaning step of cleaning the damaged component with the reproduced part.

Disclosed is a plasma processing method for processing a workpiece that includes: a silicon-containing etching target layer, an organic film provided on the etching target layer, an antireflective film provided on the organic layer, and a first mask provided on the antireflective layer, using a plasma processing apparatus having a processing container. The plasma processing method includes: etching the antireflective film using plasma generated in the processing container and the first mask to form a second mask from the antireflective film; etching the organic film using plasma generated in the processing container and the second mask to form a third mask from the organic film; generating plasma of a mixed gas including the first gas and the second gas in the processing container; and etching the etching target layer using plasma generated in the processing container and the third mask.

Heretofore, silicon nitride film formed by low pressure plasma CVD has been used for an antireflection film of a solar battery. But it is difficult to reduce the production cost of a solar battery, because, in a low pressure process, facility cost and process cost are expensive. As disclosed, a nitride film is formed by atmospheric pressure plasma CVD using dielectric barrier discharge generated by a plasma head where a plurality of plasma head unit parts is installed in parallel to generate plasma by applying electric field or magnetic field via a dielectric member. Stable glow discharge is formed even under atmospheric pressure by dielectric barrier discharge. And nitride film deposition under atmospheric pressure and low cost production of a solar battery is materialized by using dielectric barrier discharge and by reacting different plasmas generated from plasma supply openings laying side-by-side.

A disclosed etching method includes (a) forming a protective film containing carbon on a surface in a chamber of a plasma processing apparatus. The etching method further includes (b) etching an etch film of a substrate with plasma generated from an etching gas that includes a hydrogen fluoride gas and a hydrofluorocarbon gas within the chamber. The substrate includes the etch film, which is a silicon-containing film, and a mask containing carbon and provided on the etch film.

A nozzle according to the invention includes a liquid flow passage through which a liquid flows, a gas flow passage through which a gas flows, the gas flow passage communicating with the liquid flow passage and feeding the gas to the liquid flow passage, and a plasma generating mechanism for generating plasma in the gas fed from the gas flow passage to the liquid flow passage, in which the plasma generating mechanism includes a first electrode provided so as to be exposed to an inside of the liquid flow passage, a second electrode provided so as not to be exposed to the inside of the liquid flow passage and so as to be exposed to an inside of the gas flow passage, and a power source for applying a predetermined voltage across the first electrode and the second electrode, and in which the liquid with which the gas including the generated plasma is mixed as bubbles having a predetermined diameter is spouted.

A plasma processing method is implemented by a plasma processing apparatus including a processing chamber, a lower electrode, a focus ring arranged around the lower electrode, an inner upper electrode arranged to face the lower electrode, an outer upper electrode electrically insulated from the inner upper electrode, a quartz member arranged between the inner and outer upper electrodes and above the focus ring, a gas supply unit for supplying gas to the processing chamber, a first high frequency power supply unit for applying a first high frequency power for plasma generation to the lower electrode or the inner and outer upper electrodes, a first direct current power supply unit for applying a variable first direct current voltage to the outer upper electrode, and a control unit. The method includes the control unit controlling the variable first direct current voltage to reduce an amount of change in a tilt angle.

A method of depositing silicon nitride films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma, (b) depositing a halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces, (c) depositing a precoating of ALD silicon nitride on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film of ALD silicon nitride on the semiconductor substrate supported on the ceramic surface of the pedestal.

A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.