Patent classifications
H01J37/3255
Methods for fabricating gas discharge tubes
Methods for fabricating gas discharge tubes. In some embodiments, a method for fabricating a gas discharge tube (GDT) device can include providing or forming an insulator substrate having first and second sides and defining an opening. The method can further include providing or forming a first electrode and a second electrode. The method can further include forming a first glass seal between the first electrode and the first side of the insulator substrate, and a second glass seal between the second electrode and the second side of the insulator substrate, such that the first and second glass seals provide a hermetic seal for a chamber defined by the opening and the first and second electrodes.
ARC source
An ARC evaporator comprising: —a cathode assembly, —an electrode arranged for enabling that an arc between an electrode and a front surface of the target can be established, and—a magnetic guidance system placed in front of a back surface of the target characterized in that: the magnetic guidance system comprises means placed in a central region for generating at least one magnetic field and means in a peripherical region for generating at least one further magnetic field, wherein the magnetic fields generated in this manner result in a total magnetic field for guiding the arc and controlling the cathode spot path at the front surface of the target, wherein the means placed in the central region comprises one electromagnetic coil for generating a magnetic field and the means placed in the peripherical region comprises two electromagnetic coils for generating two further magnetic fields.
Edge seal for lower electrode assembly
An edge seal for sealing an outer surface of a lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber, the lower electrode assembly including an annular groove defined between a lower member and an upper member of the lower electrode assembly. The edge seal includes an elastomeric band configured to be arranged within the groove, the elastomeric band having an annular upper surface, an annular lower surface, an inner surface, and an outer surface. When the elastomeric band is in an uncompressed state, the outer surface of the elastomeric band is concave. When the upper and lower surfaces are axially compressed at least 1% such that the elastomeric band is in a compressed state, an outward bulging of the outer surface is not greater than a predetermined distance. The predetermined distance corresponds to a maximum outer diameter of the elastomeric band in the uncompressed state.
Plasma processing apparatus
A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.
System and method for particle control in MRAM processing
A system and method for reducing particle contamination on substrates during a deposition process using a particle control system is disclosed here. In one embodiment, a film deposition system includes: a processing chamber sealable to create a pressurized environment and configured to contain a plasma, a target and a substrate in the pressurized environment; and a particle control unit, wherein the particle control unit is configured to provide an external force to each of at least one charged atom and at least one contamination particle in the plasma, wherein the at least one charged atom and the at last one contamination particle are generated by the target when it is in direct contact with the plasma, wherein the external force is configured to direct the at least one charged atom to a top surface of the substrate and to direct the at least one contamination particle away from the top surface of the substrate.
Plasma source with ceramic electrode plate
A plasma source assembly for use with a substrate processing chamber is described. The assembly includes a ceramic lower plate with a plurality of apertures formed therein. A method of processing a substrate in a substrate processing chamber including the plasma source assembly is also described.
PLASMA TREATMENT DEVICE
A plasma treatment device is provided and includes a first electrode, a dielectric body supportive of the first electrode and a second mesh electrode having an opposite polarity as the first electrode and comprising a seating portion. The second mesh electrode is disposed proximate to the dielectric body to define a gap receptive of particles for collection in the seating portion. The gap is sized such that, with the second mesh electrode activated, a plasma field is generated to treat the particles in the seating portion. The seating portion is configured to retain the particles during treatment in opposition to ionic winds resulting from the plasma field.
Plasma processing apparatus
A plasma processing apparatus includes a balun having a first input terminal, a second input terminal, a first output terminal, and a second output terminal, a vacuum container, a first electrode electrically connected to the first output terminal, a second electrode electrically connected to the second output terminal, and a connection unit configured to electrically connect the vacuum container and ground, the connection unit including an inductor.
Plasma processing apparatus
A plasma processing apparatus includes a balun having a first input terminal, a second input terminal, a first output terminal, and a second output terminal, a vacuum container, a first electrode electrically connected to the first output terminal, a second electrode electrically connected to the second output terminal, and a connection unit configured to electrically connect the vacuum container and ground, the connection unit including an inductor.
SUBSTRATE TREATING APPARATUS
The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit disposed within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space; and wherein the plasma generation unit comprises: a bottom electrode member; and a top electrode member opposite to the bottom electrode member, wherein the top electrode member comprises: an electrode plate including an electrode; a first plate made of a different material from the electrode plate; and a second plate, and wherein the second plate, the electrode plate, and the first plate are stacked on one another.