H01J37/3255

SPOT TYPE ATMOSPHERIC PRESSURE PLASMA DEVICE

A spot type atmospheric pressure plasma device includes a metal casing, a metal electrode, a dielectric layer, and a gas channel. The metal electrode is disposed in an inner space of the metal casing. The dielectric layer is disposed in the inner space and surrounds an outer side surface of the metal electrode. A central area of a bottom of the dielectric layer has a plasma jet, and a bottom of the metal electrode is adjacent to the plasma jet. The gas channel includes a first section, a second section, and a third section. The first section passes through the metal casing and the dielectric layer. The second section is connected to the first section and extends between the dielectric layer and the outer side surface. The third section is connected to the second section, and is configured to direct a working gas to the plasma jet.

WIDE AREA ATMOSPHERIC PRESSURE PLASMA DEVICE

A wide area atmospheric pressure plasma device includes a metal casing, a metal electrode, and a dielectric layer. The metal casing includes a chamber, at least one gas channel, and a plasma jet channel, in which the plasma jet channel is located under the chamber. The metal electrode is disposed within the chamber, is adjacent to the plasma jet channel, and extends along a length direction of the plasma jet channel. An outlet of the gas channel is adjacent to a bottom of the metal electrode, such that a working gas in the gas channel is sprayed towards the bottom of the metal electrode. The dielectric layer wraps the metal electrode.

SYSTEM AND METHOD FOR PARTICLE CONTROL IN MRAM PROCESSING
20230386806 · 2023-11-30 ·

A system and method for reducing particle contamination on substrates during a deposition process using a particle control system is disclosed here. In one embodiment, a film deposition system includes: a processing chamber sealable to create a pressurized environment and configured to contain a plasma, a target and a substrate in the pressurized environment; and a particle control unit, wherein the particle control unit is configured to provide an external force to each of at least one charged atom and at least one contamination particle in the plasma, wherein the at least one charged atom and the at last one contamination particle are generated by the target when it is in direct contact with the plasma, wherein the external force is configured to direct the at least one charged atom to a top surface of the substrate and to direct the at least one contamination particle away from the top surface of the substrate.

Base conducting layer beneath graphite layer of ceramic cathode for use with cathodic arc deposition

Cathode structures are disclosed for use with pulsed cathodic arc deposition systems for forming diamond-like carbon (DLC) films on devices, such as on the sliders of hard disk drives. In illustrative examples, a base layer composed of an electrically- and thermally-conducting material is provided between the ceramic substrate of the cathode and a graphitic paint outer coating, where the base layer is a silver-filled coating that adheres to the ceramic rod and the graphitic paint. The base layer is provided, in some examples, to achieve and maintain a relatively low resistance (and hence a relatively high conductivity) within the cathode structure during pulsed arc deposition to avoid issues that can result from a loss of conductivity within the graphitic paint over time as deposition proceeds. Examples of suitable base material compounds are described herein where, e.g., the base layer can withstand temperatures of 1700° F. (927° C.).

METHOD AND APPARATUS TO REDUCE FEATURE CHARGING IN PLASMA PROCESSING CHAMBER
20220399183 · 2022-12-15 ·

Embodiments provided herein include an apparatus and methods for the plasma processing of a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to reducing defectivity in features formed on the surface of the substrate, improving plasma etch rate, and increasing selectivity of etching material to mask and/or etching material to stop layer. In some embodiments, the apparatus and methods enable processes that can be used to prevent or reduce the effect of trapped charges, disposed within features formed on a substrate, on the etch rate and defect formation. In some embodiments, the plasma processing methods include the synchronization of the delivery of pulsed-voltage (PV) waveforms, and alternately the delivery of a PV waveform and a radio frequency (RF) waveform, so as to allow for the independent control of generation of electrons that are provided, during one or more stages of a PV waveform cycle, to neutralize the trapped charges formed in the features formed on the substrate.

GAS DISCHARGE TUBE HAVING GLASS SEAL
20220238305 · 2022-07-28 ·

Gas discharge tube having glass seal. In some embodiments, a gas discharge tube can include an insulator layer having first and second sides and defining an opening, and first and second electrodes that cover the opening on the first and second sides of the insulator layer, respectively. The gas discharge tube can further include a first glass layer implemented between the first electrode and the first side of the insulator layer, and a second glass layer implemented between the second electrode and the second side of the insulator layer, such that the first and second glass layers provide a seal for a chamber defined by the opening and the first and second electrodes.

Ceramic material and electrostatic chuck device

Provided is a composite sintered body for an electrostatic chuck, which is not easily broken even if it is exposed to high-power plasma. Further, provided are an electrostatic chuck device using such a composite sintered body for an electrostatic chuck and a method of manufacturing a composite sintered body for an electrostatic chuck. The composite sintered body for an electrostatic chuck is a composite sintered body including an insulating ceramic and silicon carbide, in which crystal grains of the silicon carbide are dispersed in at least one selected from the group consisting of a crystal grain boundary and a crystal grain of a main phase formed by sintering crystal grains of the insulating ceramic.

Liquid chip for electron microscope including electrode

The present disclosure relates to a liquid chip for an electron microscope including a lower chip, an upper chip, and a waterway space part for supplying a liquid sample, and may attach a transmissive thin film layer made of a graphene material having an excellent bulging resistance property to a plurality of holes formed in a waterway space part to increase the thickness of a support not operating as a transmissive window to be larger than the conventional one, thereby supplying the liquid sample more stably and minimizing the loss of a spatial resolution and also suppressing the bulging phenomenon of the transmissive window. To this end, according to the present disclosure, the lower chip includes a lower substrate formed with a lower cavity; a lower support disposed on the upper surface of the lower substrate, and formed with a plurality of lower holes in the lower cavity region; a spacer located on both ends of the lower support of the lower hole; and a lower transmissive thin film layer attached on the lower support so as to cover the lower hole, the upper chip includes an upper substrate formed with an upper cavity; an upper support disposed on the upper surface of the upper substrate, and formed with a plurality of upper holes in the upper cavity region; and an upper transmissive thin film layer having a constant bulging resistance property attached on the upper support so as to cover the plurality of upper holes, the waterway space part is formed by laminating the upper support disposed on the upper surface of the upper substrate on the spacer of the lower chip, and the transmissive thin film layer is located inside the waterway space part.

Low resistance confinement liner for use in plasma chamber
11380524 · 2022-07-05 · ·

Embodiments of liners for use in a process chamber are provided herein. In some embodiments, a liner for use in a process chamber includes an upper liner having a top plate with a central opening and a tubular body extending downward from an outer peripheral portion of the top plate, wherein the top plate has a contoured inner surface having a first step with a first inner diameter and a second step with a second inner diameter greater than the first inner diameter, and wherein the tubular body has an opening for transferring a substrate therethrough; and a lower liner abutting a bottom surface of the tubular body, wherein the lower liner extends radially inward from the tubular body and includes a plurality of radial slots arranged around the lower liner, wherein the upper liner and the lower liner form a C-shaped cross-section.

METHODS AND SYSTEMS FOR RECLAMATION OF LI-ION CATHODE MATERIALS USING MICROWAVE PLASMA PROCESSING
20220223379 · 2022-07-14 ·

Disclosed herein are embodiments of systems and methods for recycling used solid feedstocks containing lithium powders for use in lithium-ion batteries. The used solid feedstocks may be Lithium Nickel Manganese Cobalt Oxide (NMC) materials. In some embodiments, the used solid feedstock can undergo a microwave plasma process to produce a newly usable, lithium supplemented solid precursor with augmented chemistries and physical properties.