A cantilever for gas flow direction control configured to support an electrode housing bowl in an associated etch process chamber. The cantilever may have a cross-section that is circular, elliptical, or airfoil shaped. The shape of the cantilever induces the flow of gas and etch products within the chamber around the cantilever, reducing turbulence around the edge of a wafer.

A substrate processing method comprising: providing a substrate having a silicon-containing dielectric film in the substrate support; and generating plasma from a processing gas including a hydrogen- and fluorine-containing gas to etch the silicon-containing dielectric film, wherein the etching step comprises supplying the processing gas into the chamber, supplying a first radio-frequency signal for generating the plasma to the substrate support or the upper electrode, and supplying a first electrical bias to the upper electrode.

Embodiments of the present disclosure provide a semiconductor processing apparatus and a dielectric window cleaning method of the semiconductor processing apparatus. The semiconductor apparatus includes a reaction chamber and a dielectric window arranged in the reaction chamber, an induction coil and a cleaning electrode, both located above the dielectric window, a radio frequency (RF) source assembly configured to apply RF power to the induction coil and the cleaning electrode, an impedance adjustment assembly electrically being connected to the cleaning electrode and being in an on-off connection to the output terminal of the RF source assembly, and the impedance adjustment assembly being configured to adjust the impedance between the output terminal of the RF source assembly and the cleaning electrode to cause the impedance to be greater than or smaller than the first predetermined value to disconnect or connect the impedance adjustment assembly and the output terminal of the RF source assembly. The semiconductor processing apparatus and the dielectric window cleaning method of the semiconductor processing apparatus of embodiments of the present disclosure can achieve a physical cleaning effect and a chemical cleaning effect at simultaneously on a basis of performing cleaning on the dielectric window. Thus, the cleaning efficiency of the dielectric window is effectively improved.

An interlocking fastening upper electrode assembly having an improved fastening force is proposed. The assembly is configured such that a bush inserted into a silicon electrode protrudes above the silicon electrode, and the protruding portion is inserted into and coupled to an anodizing plate so as to suppress rotation of the bush, the assembly including: an inner and outer tab composite nut coupled to an assembly groove of the silicon electrode and an anodizing plate so as to prevent rotation; an inner and outer tab nut assembled in the assembly groove of the silicon electrode and fitted to the outside of the inner and outer tab composite nut; and an assembly module coupled through the inside of a through part of the anodizing plate and assembled with the inner and outer tab composite nut in order to fix the anodizing plate provided above the silicon electrode.

Embodiments of the present disclosure generally relate a process chamber including a lid and a chamber body coupled to the lid. The chamber body and lid define a process volume and a coupling ring is disposed within the chamber body and below the lid. The coupling ring is coupled to ground or is coupled to a coupling RF power source. A substrate support is disposed and movable within the process volume.

A substrate processing apparatus includes a base plate, an upper plate on the base plate, a DC power supply configured to supply power to the upper plate, and a controller interconnecting the upper plate and the DC power supply. The upper plate includes a first electrode, and a second electrode spaced apart from the first electrode. The controller includes a first controller interconnecting the first electrode and the DC power supply, and a second controller interconnecting the second electrode and the DC power supply. The DC power supply is configured to apply a first voltage to the first electrode via the first controller, and configured to apply a second voltage to the second electrode via the second controller. The first voltage and the second voltage are different.

An electromagnetic separation type coating device is provided, and belongs to the technical field of vacuum coating. The device comprises a main vacuum cavity, the front side and the rear side of the main vacuum cavity are each provided with a vacuum cavity door, middle positions of the front vacuum cavity door and the rear vacuum cavity door are each provided with a set of magnetron sputtering targets, and the two sets of magnetron sputtering targets are symmetrically arranged; two sets of ion sources are symmetrically arranged on the outer walls of the left side and the right side of the main vacuum cavity, and two sets of magnetic induction coils are symmetrically arranged at two sides of each set of ion sources, respectively; a vacuum pump set is connected to the top of the main vacuum cavity, a workpiece rest is installed at the bottom in the main vacuum cavity, and is used for installing a to-be-deposited sample piece; and an auxiliary anode is further installed in the main vacuum cavity. An electromagnetic separation type coating method is further provided. The electromagnetic separation type coating device and method provided by the present disclosure have the advantages of effectively improving the three-dimensional space plasma density, increasing ion energy, and obtaining a thin film with excellent performance.

Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

An active gas generation apparatus according to the present disclosure includes: a base flange having a central bottom surface region and a peripheral protruding part; a cooling plate provided on the peripheral protruding part of the base flange; an insulating plate provided between the cooling plate and the high voltage apply electrode part; and an electrode holding member provided on a lower surface of the cooling plate to support the high voltage apply electrode part from a lower side. Provided is a gas separation structure of separating a gas flow between an in-housing space and a discharge space by the cooling plate, the electrode holding member, and the high voltage apply electrode part.

A liquid treatment apparatus includes a water pump and a plasma jet generating device. A liquid inlet of the water pump is immersed in a liquid. A liquid outlet of the water pump is configured to eject the liquid from the liquid inlet out of the water pump without artificial bubbles in the liquid. A gas inlet of the plasma jet generating device is configured to be located out of the liquid. A pair of electrodes of the plasma jet generating device is configured to generate plasma jet by the gas from the gas inlet. The plasma jet outlet is configured to be immersed in the liquid and in proximity to the liquid outlet of the water pump so that the gas is automatically entrained into the gas inlet of the plasma jet generating device when the liquid is ejected out from the liquid outlet.