The plasma processing method according to the present disclosure is performed in a plasma processing apparatus. The plasma processing method comprises preparing a substrate including a silicon-containing film and a carbon-containing film formed on the silicon-containing film; setting a temperature of the substrate to a first temperature of 0° C. or less; supplying H.sub.2O to the substrate using a first processing gas containing comprising at least one of (a) gas comprising hydrogen atoms and oxygen atoms, and (b) a first gas comprising hydrogen atoms and a second gas comprising oxygen atoms; forming plasma from the first processing gas using a radio frequency and etching the carbon-containing film; setting the temperature of the substrate to a second temperature different from the first temperature; supplying a second processing gas containing a hydrogen- and fluorine-containing gas or both a hydrogen-containing gas and a fluorine-containing gas to the substrate; and forming plasma from the second processing gas using a radio frequency and etching the silicon-containing film.

There is provided a plasma source comprising a first chamber configured to form a flat first plasma generation space, and having a first wall and a second wall, a gas supply configured to supply gas into the first chamber, an electromagnetic wave supply having a dielectric window that is provided in an opening provided in the first wall to face the first plasma generation space, and configured to supply an electromagnetic wave through the dielectric window into the first chamber. The plasma source comprises a plasma supply configured to supply radicals contained in plasma that is generated from the gas supplied into the first chamber by the electromagnetic wave to an outside of the first chamber, and a plasma ignition source provided in the first chamber to protrude from an inner wall of the second wall facing the dielectric window and to be separated from the dielectric window.

A method for forming a semiconductor device structure is provided. The method includes placing a substrate including a material layer thereon in a plasma chamber. The plasma chamber includes a housing, a first electrode array including a plurality of first sub-electrodes, a plurality of first matching units each electrically connected to one of the first sub-electrodes, and a second electrode array disposed in the housing, the second electrode array including a plurality of second sub-electrodes. The method also includes supplying an etching gas into the plasma chamber and applying a first RF power source to the first sub-electrodes of the first electrode array by the first matching units to form an etching plasma from the etching gas. The method further includes adjusting a distance between each of the first sub-electrodes and the substrate to generate a plasma density distribution across the substrate.

This application provides a plate for a semiconductor processing apparatus, the plate including a first electrode and a second electrode, where the first electrode is selectively coupled to a first ground terminal via a first switch, the second electrode is selectively coupled to a second ground terminal via a second switch, and the first electrode and the second electrode are electrically isolated from each other.

A substrate processing apparatus includes: a gas injection portion including two gas distribution portions, disposed on an upper portion in the chamber and spatially separated from each other, and two types of nozzles, respectively connected to the two gas distribution portions, having different lengths to each other; a first electrode, connected to a radio-frequency (RF) power supply and disposed below the gas injection portion to be vertically spaced apart from the gas injection portion, having a plurality of openings into which among the nozzles, one type of nozzles are respectively inserted; and a second electrode, disposed to oppose the first electrode, mounting a substrate.

A shower head assembly for a plasma processing apparatus in which a substrate is accommodatable on a substrate stage within a chamber, a plasma processing apparatus, and a plasma processing method, the shower head assembly including a shower plate including a plurality of injection holes through which a gas is sprayable out toward the substrate; and a compensation plate on a lower surface of the shower plate and facing the substrate, the compensation plate including a first compensating portion having first gas passages of a first length and a second compensating portion having second gas passages of a second length that is greater than the first length, wherein the first gas passage and the second gas passage are respectively in fluid communication with the injection holes.

Systems and methods for processing workpieces, such as semiconductor workpieces are provided. One example embodiment is directed to a processing system for processing a plurality of workpieces. The processing system can include a loadlock chamber, a transfer chamber, and at least two processing chamber having two or more processing stations. The processing system further includes a storage chamber for storing replaceable parts. The transfer chamber includes a workpiece handling robot. The workpiece handling robot can be configured to transfer a plurality of replaceable parts from the processing stations to the storage chamber.

There is provided a plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, the substrate support including: a base, a ceramic member disposed on the base and having a substrate support surface and a ring support surface, one more annular members disposed on the ring support surface to surround a substrate on the substrate support surface, first and second central electrodes inserted into the ceramic member, first to fourth vertical connectors inserted into the ceramic member, first and second annular connectors inserted into the ceramic member, and a central heater electrode inserted into the ceramic member; a DC power source electrically connected to an outer region of the first annular connector through the third vertical connector; and a voltage pulse generator electrically connected to an outer region of the second annular connector through the fourth vertical connector.

The present invention relates to a process and apparatus for the preparation of a bonded substrate. More particularly, the present invention relates to a PDMS bonding apparatus. More specifically, the present invention relates to a PDMS bonding apparatus which uses plasma to bond PDMS to a substrate.

The present invention discloses a PDMS bonding apparatus and process for using said apparatus, the apparatus comprising: a process chamber (100) forming a sealed processing space (S) for bonding of PDMS (polydimethylsiloxane); a first support (200) installed in the process chamber (100) and which supports the PDMS (1); a second support (300) installed in the process chamber (100) opposing the first support (200) and which supports a bonding object (2) which is bonded to the PDMS (1); a gas injection unit (400) which ejects process gas between the first support (200) and the second support (300), and; a plasma generator (500) which creates a plasma atmosphere within the process chamber (100).

A plasma control device includes a matching circuit, a resonance circuit, and a controller. The matching circuit is connected to a first electrode of a plasma chamber including the first electrode and a second electrode, and matches impedance of a radio frequency (RF) power by an RF driving signal with an impedance of the first electrode. The RF driving signal is based on a first RF signal having a first frequency. The resonance circuit is connected between the second electrode and a ground voltage, and controls plasma distribution within the plasma chamber by providing resonance with respect to harmonics associated with the first frequency and by adjusting a ground impedance between the second electrode and the ground voltage. The controller provides the resonance circuit with a capacitance control signal associated with the resonance and switch control signals associated with the ground impedance.