A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, and a second electrode electrically connected to the second balanced terminal. When Rp represents a resistance component between the first balanced terminal and the second balanced terminal when viewing a side of the first electrode and the second electrode from a side of the first balanced terminal and the second balanced terminal, and X represents an inductance between the first unbalanced terminal and the first balanced terminal, 1.5≤X/Rp≤5000 is satisfied.

To accurately detect a waveform of a high frequency power supplied to a sample stage or electrodes inside the sample stage and improve a yield and an operation efficiency, a plasma processing apparatus that processes a wafer to be processed placed on an upper surface of the sample stage disposed in a processing chamber disposed inside a vacuum container by using plasma formed in the processing chamber, includes: a high frequency power supply that forms the high frequency power supplied in a pulsed shape to the plasma or the wafer at a predetermined period during processing of the wafer; a determining device that a waveform of a voltage or a current from a value of the voltage or the current of the high frequency power detected at an interval longer than the period and determines whether the waveform is within a predetermined allowable range; and a notification device that notifies a user of a determination result of the determining device and a shape of the waveform.

The present inventive concept relates to a substrate processing apparatus comprising: a chamber; a substrate support part which supports one or more substrates in the chamber; an upper electrode which is disposed above and arranged opposite to the substrate support part; and a lower electrode which is disposed below and spaced apart from the upper electrode, wherein the lower electrode includes a first electrode to which first RF power having a first frequency is applied and a second electrode to which second RF power having a second frequency different from the first frequency is applied.

A radio-frequency high-voltage waveguide device including an electrical conductor configured for operation with a radio frequency and a high voltage relative to a gaseous environment and/or a ground body, an electrically conductive contact unit that is in contact with the conductor at at least one point, the contact unit being arranged on an electrically insulating mount, and an electrically conductive field distribution assembly arranged on the electrically conductive contact unit, the assembly being electrically conductively connected to the contact unit and arranged at least partly in an inside of the mount.

A plasma generator includes an outer electrode that encloses a first inner electrode and a second inner electrode. The first inner electrode includes a plurality of protrusions that extend towards the outer electrode. A voltage signal can be applied across the outer electrode and the first inner electrode to excite gas injected into gaps between the protrusions and the outer electrode. Plasma is generated surrounding the protrusions. The second inner electrode is at a downstream location of the excited gas relative to the first inner electrode. The second inner electrode forms a second gap with the outer electrode. A voltage signal can be applied across the second inner electrode and the outer electrode, further exciting the gas to generate second plasma at the second gap. The second plasma is spread evenly across the second inner electrode and the outer electrode.

Provided are an apparatus and method for processing a substrate, in which different types of plasmas are used simultaneously to complement each other's shortcomings and maximize their advantages. The apparatus for processing a substrate includes: a housing; a substrate support unit disposed inside the housing and configured to support a substrate; a shower head unit disposed inside the housing and configured to supply a process gas onto the substrate; an antenna unit disposed outside the housing; and a plasma generating unit configured to generate, inside the housing, a plasma for use in processing the substrate on the basis of the process gas, wherein the plasma generating unit generates both a first plasma and a second plasma using the antenna unit and the shower head unit as electrodes.

Provided is a plasma generator for improving uniformity of plasma. The plasma generator which includes a pair of source electrode unit 110 and bias electrode unit 120 disposed to face each other in a vacuum chamber and an RF power unit 132 and a bias RF power unit 142 supplying RF power to the source electrode unit 110 and the bias electrode unit 120, respectively, comprises a common contact point cc which is connected with a plurality of contact points cp disposed along the edge of the source electrode unit 110; and an impedance controller 150 which is connected with the common contact point cc to control the impedance.

There is provided a technique that includes: a process chamber in which a substrate is processed; a plurality of first electrodes; a plurality of second electrodes; a high-frequency power supply configured to supply a high-frequency power; a high-frequency power application plate configured to connect the plurality of first electrodes to the high-frequency power supply; and a grounding plate configured to ground the plurality of second electrodes.

There is provided a plasma processing apparatus including: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, the substrate support including: a dielectric member having a substrate supporting surface; a first filter element disposed in the dielectric member, the first filter element having a first terminal and a second terminal; and a first electrode disposed in the dielectric member, the first electrode being electrically connected to the first terminal. The plasma processing apparatus includes an RF generator coupled to the plasma processing chamber and configured to generate an RF signal; and a first DC generator electrically connected to the second terminal and configured to generate a DC signal.

Embodiments described herein generally relate to a substrate support assembly having a shield cover. In one embodiment, a substrate support assembly is disclosed herein. The substrate support assembly includes a support plate, a plurality of RF return straps, at least one shield cover, and a stem. The support plate is configured to support a substrate. The plurality of RF return straps are coupled to a bottom surface of the support plate. At least one shield cover is coupled to the bottom surface of the support plate, between the plurality of RF return straps and the bottom surface. The stem is coupled to the support plate.