Provided is a plasma processing apparatus capable of obtaining desired etch profiles and preventing the degradation of yield rates due to the adhesion of particles, and equipped with a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted; and a DC power supply for applying DC voltages to the electrodes, the apparatus being further equipped with a control apparatus for controlling the DC power supply so as to apply such DC voltages as to decrease the absolute value of the potential of the sample in the absence of the plasma.

An isolation system includes an input junction coupled to one or more RF power supplies via a match network for receiving radio frequency (RF) power. The isolation system further includes a plurality of channel paths connected to the input junction for distributing the RF power among the channel paths. The isolation system includes an output junction connected between each of the channel paths and to an electrode of a plasma chamber for receiving portions of the distributed RF power to output combined power and providing the combined RF power to the electrode. Each of the channel paths includes bottom and top capacitors for blocking a signal of the different type than that of the RF power. The isolation system avoids a risk of electrical arcing created by a voltage difference between an RF terminal and a non-RF terminal when the terminals are placed proximate to each other.

A substrate support unit for thin film deposition on a substrate including a pattern structure and a thin film deposition apparatus including the substrate support unit includes a heater; an RF electrode; a first rod connected to the heater; a second rod connected to the RF electrode; and an RF shield spaced apart from the second rod, disposed to surround the second rod, and extending in an extension direction of the second rod.

A plasma reactor for generating a plasma for use in depositing a thin film on a large area wafer, such as in the manufacturing of solar cells. A plasma electrode unit in the plasma reactor is divided into a plurality of discrete electrodes, and RF electric power is sequentially applied to the divided plasma electrodes in accordance with a predefined sequence of temporal intervals as controlled by a sequence control unit. The sequential application of RF power across the divided plasma electrode unit resolves a standing wave problem in the plasma applied over a large area corresponding to a large area wafer.

A method and apparatus for a heated substrate support pedestal is provided. In one embodiment, the heated substrate support pedestal includes a body comprising a ceramic material, a plurality of heating elements encapsulated within the body A stem is coupled to a bottom surface of the body. A plurality of heater elements, a top electrode and a shield electrode are disposed within the body. The top electrode is disposed adjacent a top surface of the body, while the shield electrode is disposed adjacent the bottom surface of the body. A conductive rod is disposed through the stem and is coupled to the top electrode.

Embodiments of the present disclosure generally relate to a system used in a semiconductor device manufacturing process. More specifically, embodiments provided herein generally include apparatus and methods for synchronizing and controlling the delivery of an RF bias voltage signal and a pulsed voltage waveform to one or more electrodes within a plasma processing chamber. Embodiments of the disclosure include a method and apparatus for synchronizing a pulsed radio frequency (RF) waveform to a pulsed voltage (PV) waveform, such that the pulsed RF waveform is on during a first stage of the PV waveform and off during a second stage. The first stage of the PV waveform includes a sheath collapse stage. The second stage of the PV waveform includes an ion current stage.

A plasma processing method is implemented by a plasma processing apparatus including a processing chamber, a lower electrode, a focus ring arranged around the lower electrode, an inner upper electrode arranged to face the lower electrode, an outer upper electrode electrically insulated from the inner upper electrode, a quartz member arranged between the inner and outer upper electrodes and above the focus ring, a gas supply unit for supplying gas to the processing chamber, a first high frequency power supply unit for applying a first high frequency power for plasma generation to the lower electrode or the inner and outer upper electrodes, a first direct current power supply unit for applying a variable first direct current voltage to the outer upper electrode, and a control unit. The method includes the control unit controlling the variable first direct current voltage to reduce an amount of change in a tilt angle.

A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency RF signal and another circuit that provides a high frequency RF signal. The system includes an output circuit and the stations. The output circuit combines the low frequency RF signal and the high frequency RF signal to generate a plurality of combined RF signals for the stations. Amount of low frequency power delivered to one of the stations depends on wafer bow, such as non-flatness of a wafer. A bowed wafer decreases low frequency power delivered to the station in a multi-station chamber with a common RF source. A shunt inductor is coupled in parallel to each of the stations to increase an amount of current to the station with a bowed wafer. Hence, station power becomes less sensitive to wafer bow to minimize wafer bowing.

A plasma processing apparatus includes a balun having a first input terminal, a second input terminal, a first output terminal, and a second output terminal, a vacuum container, a first electrode electrically connected to the first output terminal, a second electrode electrically connected to the second output terminal, and a connection unit configured to electrically connect the vacuum container and ground, the connection unit including an inductor.

A radio frequency (RF) ground return arrangement for providing a low impedance RF return path for a RF current within a processing chamber of a plasma processing chamber during processing of a substrate is provided. The RF ground return arrangement includes a set of confinement rings, which is configured to surround a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The RF ground return arrangement also includes a lower electrode support structure. The RF ground return arrangement further includes a RF contact-enabled component, which provides a RF contact between the set of confinement rings and the lower electrode support structure such that the low impedance RF return path facilitates returning the RF current back to an RF source.