The present disclosure generally relates to apparatuses and methods that control RF amplitude of an edge ring. The apparatuses and methods include an electrode that is coupled to ground through a variable capacitor. The electrode may be ring-shaped and embedded in a substrate support including an electrostatic chuck. The electrode may be positioned beneath the perimeter of a substrate and/or the edge ring. As the plasma sheath drops adjacent the edge ring due to edge ring erosion, the capacitance of the variable capacitor is adjusted in order to affect the RF amplitude near the edge of the substrate. Adjustment of the RF amplitude via the electrode and variable capacitor results in adjustment of the plasma sheath near the substrate perimeter.

A ring-shaped electrode includes a silicon ring body, and a cover body joined to at least a part of a surface of the ring body via a joining part, and having a better plasma resistance than silicon. The joining part has a heat resistance to withstand a temperature of at least 150 C., melts at 700 C. or below, and contains boron oxide.

Processing chambers including lid assemblies which form a volume above an injector assembly to decrease the deflection of the injector assembly as a result of the pressure differential between the processing side of the injector assembly and the atmospheric side of the injector assembly.

An atmospheric pressure pulsed arc plasma source and method of using including a housing having a housing opening therein; an insulator tube having an insulator tube opening therein, retained within the housing opening; and a conductive tube, retained within the insulator tube opening. A nozzle is retained by the housing. A feed path is defined in the conductive tube and the nozzle and a gas feed port is operatively coupled to the feed path. Feedstock is provided in the feed path and electrically coupled to the conductive tube. A pulsed DC power source provides a pulsed voltage to the conductive tube. The plasma source emits a discharge stream having a temperature that is less than 50 C. from the nozzle and a coating is formed on a substrate.

A ring-shaped electrode includes a silicon ring body, and a cover body joined to at least a part of a surface of the ring body via a joining part, and having a better plasma resistance than silicon. The joining part has a heat resistance to withstand a temperature of at least 150 C., melts at 700 C. or below, and contains boron oxide.

A plasma processing apparatus including a processing container and a conductive member, includes a plasma generator configured to generate plasma in the processing container, a power application part configured to apply a DC power to the conductive member in a state in which plasma is generated in the processing container by the plasma generator, a measurement part configured to measure a physical quantity related to the DC power applied by the power application part, and a calculator configured to obtain a wear amount of the conductive member using the measured physical quantity related to the DC power in a correlation function between the wear amount of the conductive member and the physical quantity related to the DC power.

A film quality of a film formed on a substrate is improved. A plasma atomic layer deposition apparatus has a lower electrode holding the substrate, and an upper electrode having an opposite surface opposed to the lower electrode and generating plasma discharge between the upper electrode and the lower electrode. Further, the plasma atomic layer deposition apparatus has a conductive deposition preventing member fixed to the opposite surface of the upper electrode by a plurality of screws, and other conductive deposition preventing member fixed to the conductive deposition preventing member by a plurality of others screws. At this time, in a plan view, the plurality of screws and the plurality of other screws are arranged so as not to overlap each other.

A dynamically tunable process kit, a processing chamber having a dynamically tunable process kit, and a method for processing a substrate using a dynamically tunable process kit are provided. The dynamically tunable process kit allows one or both of the electrical and thermal state of the process kit to be changed without changing the physical construction of the process kit, thereby allowing plasma properties, and hence processing results, to be easily changed without replacing the process kit. The processing chamber having a dynamically tunable process kit includes a chamber body that includes a portion of a conductive side wall configured to be electrically controlled, and a process kit. The processing chamber includes a first control system operable to control one or both of an electrical and thermal state of the process kit and a second control system operable to control an electrical state of the portion of the side wall.

The present disclosure provides a system configured for sputter deposition on a substrate. The system includes a sputter deposition chamber having a processing zone, one or more sputter deposition sources arranged at a first side of the processing zone, and a shielding device arranged at a second side of the processing zone, wherein the shielding device includes a frame assembly mounted to the sputter deposition chamber and one or more conductive sheets detachably mounted on the frame assembly, wherein the one or more conductive sheets provide a surface arranged along the processing zone.

A plasma processing system includes a plasma processing apparatus and a transfer device. The plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed inside the plasma processing chamber and having a lower electrode; an upper electrode assembly disposed above the substrate support, and having an electrode support and a replaceable upper electrode plate disposed below the electrode support; and a lifter configured to move the replaceable upper electrode plate vertically between an upper position and a lower position inside the plasma processing chamber, and configured to fix the replaceable upper electrode plate to the electrode support when the replaceable upper electrode plate is in the upper position. The transfer device includes: a transfer chamber; and a transfer robot disposed inside the transfer chamber, and configured to transfer the replaceable upper electrode plate between the lower position inside the plasma processing chamber and the transfer chamber.