An arc deposition system includes a coating chamber and a central cathode target disposed within the coating chamber. At least two anodes surround the central cathode target. Each anode is positively biased with respect to the central cathode target such that each anode independently induces an associated racetrack erosion profile on the central cathode target. At least two magnetic components are located within the central cathode target. The magnetic components guide an associated arc that forms its associated racetrack erosion profile. Characteristically, each anode of the at least two anodes has an associated magnetic component.

A coating method includes vaporizing a portion of a cathode to form a metallic plasma, and directing the metallic plasma toward the workpiece. A first magnetic field generator, disposed in a first electrically conductive portion of a first stinger cup, is operated to steer the electrical arc about at least one evaporative surface of the cathode. a second portion of the electrically conductive stinger cup is selectively contacted with the cathode, and the first portion of the first stinger cup is spaced from the second portion from by a thermally insulating layer therebetween. The thermally insulating layer is disposed directly between the first magnetic field generator and the cathode when the first stinger cup is in contact with the cathode.

The present invention relates to a target for an ARC source having a first body (3) of a material to be vaporized, which essentially comprises in one plane a surface which is intended to be vaporized, wherein the surface surrounds in this plane a central area, characterized in that in the central area a second body (7) is provided, which is preferably in the form of a disk and is electrically isolated from the first body (3), in such a way that the second body (7) can essentially provide no electrons for maintaining a spark.

An ion generator includes an ion source control unit that controls a gas supply unit and a plasma excitation source in accordance with a current ion source condition and a new ion source condition to be employed subsequent to the current ion source condition, a retention time obtaining unit that obtains retention time for the current ion source condition, and a pre-treatment condition setting unit that sets a pre-treatment condition defining a pre-treatment for forming a surface layer region suitable for the new ion source condition on a plasma chamber inner wall based on the current ion source condition, the retention time, and the new ion source condition. The ion source control unit is configured to control the gas supply unit and the plasma excitation source in accordance with the pre-treatment condition when the current ion source condition is changed to the new ion source condition.

A hard film whose composition formula satisfies M.sub.1-a-bC.sub.aN.sub.b, in which M is at least one element selected from Ti, Cr and Al, or is the element and at least one element selected from Group 4 elements except for Ti, Group 5 elements, Group 6 elements except for Cr, Si, Y, and rare earth elements. Atomic ratios of M, C and N satisfy: 0.01a0.50; 0.10b0.50; and 0<1-a-b. A ratio y of C-to-C bonding to all C bonding in the film is 0.20 or more.

Methods and apparatus provide for: producing a plasma plume within a plasma containment vessel from a source of plasma gas; feeding an elongate feedstock material having a longitudinal axis into the plasma containment vessel such that at least a distal end of the feedstock material is heated within the plasma plume; and spinning the feedstock material about the longitudinal axis as the distal end of the feedstock material advances into the plasma plume, where the feedstock material is a mixture of compounds that have been mixed, formed into the elongate shape, and at least partially sintered.

A deposition apparatus, which forms a film on a substrate, includes a rotation unit configured to rotate a target about a rotating axis; a striker configured to generate an arc discharge; a driving unit configured to drive the striker so as to make a close state which the striker closes to a side surface around the rotating axis of the target to generate the arc discharge; and a control unit configured to control rotation of the target by the rotation unit so as to change a facing position on the side surface of the target facing the striker in the close state.

A cathode for use in an ion deposition process includes a main body defining a working surface of the cathode and at least one insert coupled to the main body. The main body includes a first deposition material and the at least one insert includes a second deposition material that is incompatible with the first deposition material. The at least one insert is at least partially exposed at the working cathode surface. The first and second deposition materials are vaporizable in response to an electric arc generated at the working cathode surface for depositing a coating including the first and second deposition materials on a substrate.