Provided is a member for a plasma processing apparatus consisting of a tungsten carbide phase. The member includes at least one type of atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, in which the total content of the atoms is in a range of 30 to 3300 atomic ppm.

Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes a ceramic plate having a first side configured to support a substrate and a second side opposite the first side, wherein the ceramic plate includes an electrode embedded in the ceramic plate; a ceramic ring disposed about the ceramic plate and having a first side and a second side opposite the first side, wherein the ceramic ring includes a chucking electrode and a heating element embedded in the ceramic ring; and a cooling plate coupled to the second side of the ceramic plate and the second side of the ceramic ring, wherein the cooling plate includes a radially inner portion, a radially outer portion, and a thermal break disposed therebetween.

The present disclosure discloses a lift thimble system, a reaction chamber, and semiconductor processing equipment, including a wafer thimble device configured to lift a wafer from a base by rising or drop the wafer onto the base by descending, and a focus ring thimble device configured to lift a focus ring from an initial position of the focus ring by rising to cause an inner ring area of an upper surface of the focus ring to lift an edge area of the wafer, or cause the focus ring to return to the initial position by descending. The technical solutions of the system, the reaction chamber, and the equipment of the present disclosure improve maintenance efficiency of an abnormal situation, and double the service lifetime of the focus ring. Moreover, the technical solutions may further realize replacement of the focus ring without damaging reaction chamber vacuum to improve efficiency.

A component, a method of manufacturing a component, and a method of cleaning a component is provided. The component includes a gas flow system within the component, wherein the gas flow system fluidly couples one or more inlet holes and one or more outlet holes. The manufacturing of the component results in an arc shaped groove and a circumferential groove created in the body of the ring. The component undergoes one or more cleaning operations, including rinsing, baking, or purging operations. The cleaning operations remove debris or particles in or on the component, where the debris or particles can be caused during manufacturing of the component, or during use of the component in a semiconductor processing system.

There is provided a system for processing a substrate under a depressurized environment. The system comprises: a processing chamber configured to perform desired processing on a substrate; a transfer chamber having a transfer mechanism configured to import or export the substrate into or from the processing chamber; and a controller configured to control a processing process in the processing chamber. The transfer mechanism comprises: a fork configured to hold the substrate on an upper surface; and a sensor provided in the fork and configured to measure an internal state of the processing chamber. The controller is configured to control the processing process in the processing chamber on the basis of the internal state of the processing chamber measured by the sensor.

Provided is a protective material ring in which a plurality of silicon members are joined. A protective material ring is to be installed in a treatment chamber of a substrate treatment apparatus performing plasma treatment on a substrate, and the substrate is accommodated in the treatment chamber. The protective material ring includes: three or more silicon members; and a joining part joining the silicon members. The joining part contains boron oxide.

Various kinematic mounts used to mount a carrier ring carrying a substrate to a pedestal within a processing chamber. Each of the various kinematic mounts provide a smooth gliding action during mounting, reduce the generation of unwanted particles and prevent free-fall of the carrier ring to the pedestal.

Systems and techniques for providing for semiconductor processing chambers configured for use with two concentric edge rings with dual-lift mechanisms are disclosed. The dual-lift mechanisms may each have a first lifter structure and a second lifter structure which may be each at least partially independently actuatable. The first lifter structure may be used to move a lower edge ring of the edge rings between two or more vertically offset positions, and the second lifter structure may be used to raise and lower an upper edge ring of the edge rings. The dual-lift mechanism may be interfaced to the chamber housing of the semiconductor processing chamber.

The present invention relates to a focus ring for improvement of a semiconductor plasma etching process, which is circular, penetrates vertically into the middle portion thereof, and has a plurality of slots equally spaced apart from one another by a given distance on the edge periphery of the underside thereof in a longitudinal direction thereof, wherein so as to allow a plasma to be dispersed and exhausted uniformly at a fast speed through the slots, each slot becomes increased or decreased in diameter in a direction from top to bottom thereof to thus have a top diameter and a bottom diameter different from each other, and otherwise, each slot is rounded inward from both of top and bottom peripheries thereof.

A plasma processing method includes: setting a temperature of a substrate support surface to a first temperature; supplying electric power from an electric power adjuster to a heater; before plasma is generated, when the temperature of the substrate support surface measured by a temperature sensor stabilizes at the first temperature, measuring first electric power supplied to the heater; after the plasma is generated, when the temperature of the substrate support surface measured by the temperature sensor stabilizes at the first temperature, measuring second electric power supplied to the heater; calculating an input heat quantity input from the plasma based on the first electric power and the second electric power; and correcting the first temperature to a second temperature based on the input heat quantity and a thermal resistance between the substrate support and the temperature sensor or between a substrate and the temperature sensor.