A Faraday shielding apparatus includes a Faraday shielding plate and a resistance wire attached to the lower end of the Faraday shielding plate; the Faraday shielding plate includes a conductive ring and a plurality of conductive petal-shaped members radially symmetrically connected to the outer periphery of the conductive ring; and an insulating and thermally conductivity layer is on the outer surface of the resistance wire. During the etching process, the heating circuit and the resistance wire are conductively connected, increasing the temperature of the resistance wire when it is energized. The Faraday shielding plate is between a radio frequency coil and the resistance wire to form a shield. The output terminal of the heating power supply is filtered by way of a filter circuit unit, then is connected to the resistance wire, preventing coupling between the radio frequency coil and the resistance wire.

A substrate treating apparatus includes a process treating unit providing a treating space for treating a substrate and a plasma generation unit provided above the process treating unit and generating a plasma from a process gas. The plasma generation unit includes a plasma chamber having a discharge space formed therein, an antenna surrounding an outside of the plasma chamber and flowing a high frequency current therethrough, and a cover member surrounding an outside of the antenna, and wherein the cover member is grounded.

An element chip manufacturing method including: attaching a substrate via a die attach film (DAF) to a holding sheet; forming a protective film that covers the substrate; forming an opening in the protective film with a laser beam, to expose the substrate in the dicing region therefrom; exposing the substrate to a first plasma to etch the substrate exposed from the opening, so that a plurality of element chips are formed from the substrate and so that the DAF is exposed from the opening; exposing the substrate to a second plasma to etch the die attach film exposed from the opening, so that the DAF is split so as to correspond to the element chips; and detaching the element chips from the holding sheet, together with the split DAF. The DAF is larger than the substrate. The method includes irradiating the laser beam to the DAF protruding from the substrate.

Various embodiments herein relate to carriers for supporting one or more substrate as the substrates are passed through a processing apparatus. In many cases, the substrates are oriented in a vertical manner. The carrier may include a frame and vertical support bars that secure the glass to the frame. The carrier may lack horizontal support bars. The carrier may allow for thermal expansion and contraction of the substrates, without any need to provide precise gaps between adjacent pairs of substrates. The carriers described herein substantially reduce the risk of breaking the processing apparatus and substrates, thereby achieving a more efficient process. Certain embodiments herein relate to methods of loading substrates onto a carrier.

Embodiments described herein generally relate to a substrate support assembly having a shield cover. In one embodiment, a substrate support assembly is disclosed herein. The substrate support assembly includes a support plate, a plurality of RF return straps, at least one shield cover, and a stem. The support plate is configured to support a substrate. The plurality of RF return straps are coupled to a bottom surface of the support plate. At least one shield cover is coupled to the bottom surface of the support plate, between the plurality of RF return straps and the bottom surface. The stem is coupled to the support plate.

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a gas supplier through which a process gas is supplied to the process chamber; a plasma generator provided so as to protrude into the process chamber, constituted by a coil and an insulator, and configured to generate a plasma of the process gas in the process chamber; and an adjuster capable of adjusting a gap distance between the coil and the insulator.

A deposition system comprises a vacuum chamber having a cylindrical inner wall, a cylindrical parts carousel disposed concentrically inside the cylindrical inner wall of the vacuum chamber, and one or more deposition sources arranged to flow deposition material onto the cylindrical parts carousel. A cylindrical shutter assembly is disposed concentrically inside the cylindrical inner wall of the vacuum chamber, and has (1) a shuttered position in which the cylindrical shutter assembly blocks the one or more deposition sources from depositing onto the parts carousel and (2) an unshuttered position in which the cylindrical shutter assembly does not block the one or more deposition sources from depositing onto the parts carousel. A drive train rotates the cylindrical shutter assembly between the shuttered and unshuttered positions. The drive train not operatively connected to rotate the cylindrical parts carousel. The deposition sources may include inner and outer sputter sources.

Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

A physical vapor deposition (PVD) apparatus includes: a vacuum chamber; a pedestal arranged in the vacuum chamber and configured to support a substrate; a target arranged on the vacuum chamber and including a deposition material; a shield arranged on an inner sidewall of the vacuum chamber toprotect the vacuum chamber from the deposition material; a target power supply applying a target voltage to the target to generate plasma in the vacuum chamber; and a magnet configured to induce the plasma to the target; and a magnetic field formation line connected with the target power supply, wherein the magnetic field formation line surrounds the shield symmetrically with respect to a center of the shield to form a magnetic field in the vacuum chamber.

A precleaning chamber (100, 200, 300) and a plasma processing apparatus, comprising a cavity (20) and a dielectric window (21, 21′) disposed at the top of the cavity (20), a base (22 ) and a process assembly (24) surrounding the base (22) are disposed in the precleaning chamber (100, 200, 300), and the base (22), the process assembly (24 ) and the dielectric window (21, 21′) together form a process sub-cavity (211) above the base (22); and a space of the cavity (20) located below the base (22) is used as a loading/unloading sub-cavity (202), the precleaning chamber (100, 200, 300) further comprises a gas is device (32), the gas inlet device (32) comprises a gas inlet (323), and the gas inlet (323) is configured to directly transport a process gas into the process sub-cavity (211) from above the process assembly (24). The precleaning chamber (100, 200, 300) not only shortens the gas inlet path of the process gas, but also reach a desired plasma density under the conditions where a relatively small amount of process gas is introduced, thereby reducing the usage cost.