Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, an apparatus for processing a substrate includes: a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber; two or more concentric inductive coils disposed above the dielectric lid to inductively couple RF energy into the processing volume above the substrate support; and an electromagnetic dipole disposed proximate a top surface of the dielectric lid between two adjacent concentric inductive coils of the two or more concentric inductive coils.

A plasma generating apparatus may include a cathode assembly including a cathode, an anode assembly including an anode having therein a plasma generation space, and one or more magnetic force generators configured to generate a magnetic force. The anode assembly has one end portion in which a gas supply path is provided and the other end portion having an opening, the gas supply path configured to supply a plasma generating gas to the plasma generation space. The gas supply path is configured to generate a vortex of the plasma generating gas in the plasma generation space and said one or more magnetic force generators are arranged such that the magnetic force is generated in a direction opposite to a rotational direction of the vortex of the plasma generating gas.

A plasma processing device capable of plasma shaping through magnetic field control includes: a vacuum chamber having an inner space on which a substrate is mounted; an antenna positioned on the upper portion of the chamber and generating plasma in the inner space of the chamber; a magnetic field generation unit including a first magnetic field generation unit disposed on the lower portion of the chamber and including one or more electromagnetic coils and a second magnetic field generation unit including one or more electromagnetic coils disposed on the side of the chamber; and a control unit controlling current input into the electromagnetic coils of the magnetic field generation unit.

In a method of manufacturing a semiconductor device, a mask pattern is formed over a target layer to be etched, and the target layer is etched by using the mask pattern as an etching mask. The etching is performed by using an electron cyclotron resonance (ECR) plasma etching apparatus, the ECR plasma etching apparatus includes one or more coils, and a plasma condition of the ECR plasma etching is changed during the etching the target layer by changing an input current to the one or more coils.

Provided is an arc evaporation source equipped with a target, a ring-shaped magnetic field guide magnet and a back side magnetic field generation source. The magnetic field guide magnet is aligned in a direction perpendicular to the evaporation face of the target and has a polarity that is the magnetization direction facing forward or backward. The back side magnetic field generation source is disposed at the rear of the magnetic field guide magnet, which is at the side of the back side of the target, and forms magnetic force lines running in the direction of magnetization of the magnetic field guide magnet. The target is disposed such that the evaporation face is positioned in front of the magnetic field guide magnet.

Various embodiments provide Molten Target Sputtering (MTS) methods and devices. The various embodiments may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules for better crystal formation at low temperature operation. The various embodiment MTS methods and devices may enable the growth of a single crystal Si.sub.1-xGe.sub.x film on a substrate heated to less than about 500° C. The various embodiment MTS methods and devices may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules without requiring the addition of extra systems.

Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to systems and methods that implement magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a system generates a first portion of a magnetic field adjacent a first circumferential portion of a substrate, and can generate a second portion of the magnetic field adjacent to a second circumferential portion of the substrate. The second circumferential portion is disposed at an endpoint of a diameter that passes through an axis of rotation to another endpoint of the diameter at which the first circumferential portion resides. The second peak magnitude can be less than the first peak magnitude. The system rotates the first and second portions of the magnetic fields to decompose a target material to form a plasma adjacent the substrate. The system forms a film upon the substrate.

An apparatus for processing or curing a substrate, the apparatus comprising: a support (102) arranged to transport a moving flexible substrate (104), a plasma generator (110) arranged to generate plasma (112), a magnet array (114) arranged to spatially define the plasma, wherein the magnet array comprises: a first elongate magnet (404) having a first polarity; a second elongate magnet (406), substantially parallel to the first elongate magnet, having a second polarity, opposite to the first polarity, such that the first and second elongate magnets define a first straight magnetic flux portion (204); a third elongate magnet (408), substantially parallel to the first elongate magnet, having the first polarity, such that the second and third elongate magnets define a second straight magnetic flux portion, connected to the first straight magnetic flux portion by a first curved magnetic flux portion (206); a fourth elongate magnet (410), substantially parallel to the first elongate magnet, having the second polarity, such that the third and fourth elongate magnets define a third straight magnetic flux portion, connected to the second straight magnetic flux portion by a second curved magnetic flux portion.

There is provided an ion source device including a pair of first electrodes for emitting an electron, a second electrode that defines a region in which the electron is enclosed and to which raw material source gas is supplied, between the pair of first electrodes, and that has a hole portion through which an ion generated by collision between the electron and the material gas is extruded, an extraction electrode disposed apart from the second electrode along an extraction direction of the ion extracted from the second electrode so that a potential difference is formed between the second electrode and the extraction electrode, and an intermediate electrode disposed between the second electrode and the extraction electrode. A first potential difference between the second electrode and the intermediate electrode is greater than a second potential difference between the second electrode and the extraction electrode.

Disclosed herein is a plasma processing apparatus including: a processing chamber in which a sample is to be processed using plasma; a radio-frequency power source that supplies radio-frequency power for producing the plasma; and a sample stage on which the sample is to be mounted, the plasma processing apparatus further including a control unit that performs control so that plasma is produced after applying a DC voltage for electrostatically attracting the sample to the sample stage to each of two electrodes placed on the sample stage, and a heat-transfer gas for adjusting a temperature of the sample is supplied to a back surface of the sample after production of the plasma.