In an embodiment of the invention there is a cyclotronic actuator utilizing a high-voltage plasma driver connected to a first electrode. A second electrode is grounded and the two are isolated from each other by a dielectric plate. A magnet is positioned beneath the dielectric plate such that a coaxial dielectric barrier discharge plasma is formed outwardly between the first electrode across the dielectric plate. The magnet positioned beneath the dielectric plate introduces a magnetic field transverse to the plasma current path, such that the plasma discharge discharges radially and the local magnetic field is oriented vertically in a direction perpendicular to the dielectric plate to create a Lorentz Force, which forces the plasma discharge to move radially outwardly in a curved radial streamer mode pattern.

A plasma processing apparatus includes a sample stage on which a sample is placed an inside of the processing chamber; a dielectric membrane forming an upper surface portion of the sample stage; a plurality of film-shaped electrodes which is disposed in the dielectric membrane, to which a DC power from a DC power supply is supplied and in which an electrostatic force for attracting the sample is formed; and a bias electrode (ESC base metal) disposed below the dielectric membrane and supplied with radio frequency power for forming a radio frequency bias potential from a radio frequency power supply during the processing of the sample. The plurality of electrodes includes a first electrode to which a positive polarity is imparted and a second electrode to which a negative polarity is imparted, wherein the first electrode and the second electrode are electrically connected to a corresponding positive electrode terminal and a corresponding negative electrode terminal of the DC power supply through the corresponding low pass filter circuits (LPF).

A system and apparatus for controlled fusion in a field reversed configuration (FRC) magnetic topology and conversion of fusion product energies directly to electric power. Preferably, plasma ions are magnetically confined in the FRC while plasma electrons are electrostatically confined in a deep energy well, created by tuning an externally applied magnetic field. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions ions are fused together by the nuclear force, thus forming fusion products that emerge in the form of an annular beam. Energy is removed from the fusion product ions as they spiral past electrodes of an inverse cyclotron converter. Advantageously, the fusion fuel plasmas that can be used with the present confinement and energy conversion system include advanced (aneutronic) fuels.

In an embodiment of the invention there is a cyclotronic actuator utilizing a high-voltage plasma driver connected to a first electrode. A second electrode is grounded and the two are isolated from each other by a dielectric plate. A magnet is positioned beneath the dielectric plate such that a coaxial dielectric barrier discharge plasma is formed outwardly between the first electrode across the dielectric plate. The magnet positioned beneath the dielectric plate introduces a magnetic field transverse to the plasma current path, such that the plasma discharge discharges radially and the local magnetic field is oriented vertically in a direction perpendicular to the dielectric plate to create a Lorentz Force, which forces the plasma discharge to move radially outwardly in a curved radial streamer mode pattern.

Systems and methods for controlling a process applied to a substrate within a plasma chamber are described. The systems and methods include generating and supplying odd harmonic signals and summing the odd harmonic signals to generate an added signal. The added signal is supplied to an electrode within the plasma chamber for processing the substrate. The use of odd harmonic signals facilitates high aspect ratio etching of the substrate.

In an embodiment of the invention there is a cyclotronic actuator. The actuator is defined by having a high-voltage plasma driver connected to a first electrode. The first electrode is surrounded by a dielectric material. A second electrode is grounded and placed away from the first electrode, such that a plasma arc is formed between the pair of electrodes when the high-voltage plasma driver is activated. A ring magnet surrounding the second electrode is configured to introduce a magnetic field locally to the plasma arc. The plasma arc will then discharge in a radial direction. The magnet creates a local magnetic field oriented vertically in a direction parallel to the axisymmetric orientation of the first and second electrodes to create a Lorentz Force. The force causes the plasma arc to move in a tangential direction and causes the plasma arc to discharge out in a circular pattern.

A method for the implantation of mono- or multi-charged ions on a surface of an object to be treated placed in a vacuum chamber, wherein this method includes the step that consist simultaneously of: injecting into the vacuum chamber a beam of ions produced by a source of ions and directing this beam of ions towards the surface of the object to be treated, and illuminating the surface of the object to be treated with a source of ultraviolet radiation producing ultraviolet radiation that propagates in the vacuum chamber. An ion implantation installation for implementing the implantation method.

In a plasma processing apparatus including a plasma processing chamber disposed in a vacuum chamber, a sample stage disposed in the plasma processing chamber and on which a sample is placed, in the vacuum chamber, a second shower plate disposed above the sample stage, a first shower plate disposed above the second shower plate, and a dielectric window disposed above the first shower plate, first gas is supplied from a first gas supply unit to a space between the dielectric window and the first shower plate, and second gas is supplied from a second gas supply unit to a space between the first shower plate and the second shower plate.

In order to enable plasma density distribution control having a high degree of freedom to solve problems of not only in-plane uniformity of an etching processing but also a reduction of a charge-up damage, a plasma processing apparatus includes: a vacuum chamber provided with a plasma processing chamber that plasma-processes a substrate inside and is able to exhaust the inside of this plasma processing chamber to a vacuum; and a microwave power supply unit that is provided with a microwave source and a circular waveguide and supplies, via the circular waveguide, a microwave power oscillated from the microwave source to the vacuum chamber, in which the microwave power supply unit is configured by arranging a plurality of waveguides, which are coaxially and concentrically arranged with the circular waveguide and have different dielectric constants inside, between the circular waveguide and the vacuum chamber.

According to the process, the filiform component is continuously linearly moved through magnetic dipoles arranged opposite each other and around a tube constituting a treatment chamber, and the microwave energy is introduced between at least two magnetic dipoles.