An object of the present invention is to reduce non-uniformity of etching in a plane of a wafer. An electrostatic chuck device includes: an electrostatic chuck part having a sample mounting surface on which a sample is mounted and having a first electrode for electrostatic attraction; a cooling base part placed on a side opposite to the sample mounting surface with respect to the electrostatic chuck part to cool the electrostatic chuck part; and an adhesive layer that bonds the electrostatic chuck part and the cooling base part together, in which the cooling base part has a function of a second electrode that is an RF electrode, a third electrode for RF electrode or LC adjustment is provided between the electrostatic chuck part and the cooling base part, and the third electrode is bonded to the electrostatic chuck part and the cooling base part and insulated from the cooling base part.

A detecting method includes: supplying a bias power to a lower electrode, and supplying a source power to an upper electrode or the lower electrode; and detecting an output value of a sensor attached to a chamber. The detecting the output value of the sensor includes (a) specifying a first phase of a bias waveform for each cycle of the bias waveform, (b) specifying a second phase of a source waveform after a predetermined first time elapses from a timing when the first phase is specified, and (c) sampling the output value of the sensor after a predetermined second time elapses from a timing when the second phase is specified. The steps (a) to (c) are repeated for each cycle of the bias waveform.

A plasma processing apparatus includes: a processing container; an electrode that places a workpiece thereon; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies a bias power to the electrode; an edge ring disposed at a periphery of the workpiece; a DC power supply that supplies a DC voltage to the edge ring; a controller that executes a first control procedure in which the DC voltage periodically repeats a first state having a first voltage value and a second state having a second voltage value, the first voltage value is supplied in a partial time period within each period of a potential of the electrode, and the second voltage value is supplied such that the first and second states are continuous.

Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber comprising a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

A substrate processing system includes a hinge assembly configured to allow a substrate support and an RF bias assembly to slide, from a docked position to an undocked position, relative to other components of a processing chamber. A make-break connector is configured to supply fluid to at least one of the substrate support and the RF bias assembly. The make-break connector includes a first portion including a first fluid passage connected to a first conduit. A second portion includes a second fluid passage connected to a second conduit. The first fluid passage in the first portion fluidly communicates with the second fluid passage in the second portion. The first portion is configured to slide with the substrate support and the RF bias assembly relative to the second portion and the other portions of the processing chamber. The first portion is located inwardly relative to the second portion.

Embodiments of the disclosure relate to methods for enlarging the opening width of substrate features by reducing the overhang of deposited films. Some embodiments of the disclosure utilize a high power bias pulse to etch the deposited film near the opening of the substrate feature. Some embodiments of the disclosure etch the deposited film without damaging the underlying substrate.

An apparatus for a transformer isolator used for transferring power to an element of a substrate support used in a plasma chamber is provided. A primary of the transformer isolator includes a primary base plate configured to electrically couple to ground. A primary ferrite disposed over the primary base plate, and the primary ferrite has a primary circular channel. A primary coil is wound within the primary circular channel. A primary shield is disposed over the primary ferrite and the primary coil. The primary shield includes a first plurality of radial segments that extend from a primary center region to outside a periphery of the primary ferrite. An extended region of the primary shield has a curved section to connect the primary shield with the primary base plate. In one example, the secondary of the transformer isolator has similar construction as the primary and are used together as part of the transformer isolator.

A chucking system reduces differences in chucking forces that are applied by two electrodes of an electrostatic chuck, to a substrate disposed atop the chuck. Initial chucking voltages are applied to each of two electrodes, and an initial current provided to at least a first electrode of the two electrodes is measured. A process is initiated that affects a DC voltage of the substrate, then a modified current provided to at least the first electrode is measured. A modified chucking voltage for a selected one of the two electrodes is determined that will reduce chucking force imbalance across the substrate based at least on the initial current and the modified current. The modified chucking voltage is then provided to the selected one of the two electrodes.

There is provided a plasma processing apparatus including: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, the substrate support including: a dielectric member having a substrate supporting surface; a first filter element disposed in the dielectric member, the first filter element having a first terminal and a second terminal; and a first electrode disposed in the dielectric member, the first electrode being electrically connected to the first terminal. The plasma processing apparatus includes an RF generator coupled to the plasma processing chamber and configured to generate an RF signal; and a first DC generator electrically connected to the second terminal and configured to generate a DC signal.

Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. A surface floating potential of a substrate placed atop a stage in a positive column of the DC plasma is adjusted and maintained to a reference potential. A periodic biasing signal referenced to the reference potential is capacitively coupled to the stage to control a surface potential at the substrate according to: an active phase for provision of kinetic energy to free electrons in the DC plasma for activation of targeted bonds at the surface of the substrate; a neutralization phase for repelling of the free electrons from the surface of the substrate; and an initialization phase for restoring an initial condition of the surface floating potential.