An apparatus includes an electrostatic chuck and located within a vacuum enclosure. A plurality of conductive plates can be embedded in the electrostatic chuck, and a plurality of plate bias circuits can be configured to independently electrically bias a respective one of the plurality of conductive plates. Alternatively or additionally, a plurality of spot lamp zones including a respective set of spot lamps can be provided between a bottom portion of the vacuum enclosure and a backside surface of the electrostatic chuck. The plurality of conductive plates and/or the plurality of spot lamp zones can be employed to locally modify chucking force and to provide local temperature control.

A substrate processing system for selectively etching a substrate includes a first chamber and a second chamber. A first gas delivery system supplies an inert gas species to the first chamber. A plasma generating system generates plasma including ions and metastable species in the first chamber. A gas distribution device removes the ions from the plasma, blocks ultraviolet (UV) light generated by the plasma and delivers the metastable species to the second chamber. A substrate support is arranged below the gas distribution device to support the substrate. A second gas delivery system delivers a reactive gas species to one of the gas distribution device or a volume located below the gas distribution device. The metastable species transfer energy to the reactive gas species to selectively etch one exposed material of the substrate more than at least one other exposed material of the substrate.

A stage according to an exemplary embodiment has an electrostatic chuck. The electrostatic chuck has a base and a chuck main body. The chuck main body is provided on the base and configured to hold a substrate with electrostatic attractive force. The chuck main body has a plurality of first heaters and a plurality of second heaters. The number of second heaters is larger than the number of first heaters. The first heater controller drives the plurality of first heaters by an alternating current output or a direct current output from a first power source. The second heater controller drives the plurality of second heaters by an alternating current output or a direct current output from a second power source which has electric power lower than electric power of the output from the first power source.

An electrostatic chuck including a clamping layer having a first clamping electrode and a second clamping electrode is disclosed. A first clamping electrode defining a first clamping zone and a second clamping zone is provided. The first clamping zone and the second clamping zone are separated by a first gap and are electrically connected by at least one electrical connection extending across the first gap. A second clamping electrode disposed radially outward from the first clamping electrode. The second clamping electrode defining a third clamping zone and a fourth clamping zone that are separated by a second gap. The third clamping zone and the fourth clamping zone are electrically connected by at least one electrical connection extending across the second gap. Plasma processing apparatuses and systems incorporating the electrostatic chuck are also provided.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a process chamber provided with a reaction space and having at least one insulation member exposed to the reaction space; a substrate support member for supporting a substate at the reaction space; a gas supply member for selectively supplying a passivation gas or a process gas to the reaction space; a plasma source for exciting the passivation gas or the process gas to a plasma; and a controller for controlling the gas supply member and the plasma source, and wherein the controller controls the gas supply member and the plasma source so the passivation gas is supplied to the reaction space and a supplied passivation gas is excited to the plasma, in a state at which the substrate is not taken into the reaction space.

There is provided a system for processing a substrate under a depressurized environment. The system comprises: a processing chamber configured to perform desired processing on a substrate; a transfer chamber having a transfer mechanism configured to import or export the substrate into or from the processing chamber; and a controller configured to control a processing process in the processing chamber. The transfer mechanism comprises: a fork configured to hold the substrate on an upper surface; and a sensor provided in the fork and configured to measure an internal state of the processing chamber. The controller is configured to control the processing process in the processing chamber on the basis of the internal state of the processing chamber measured by the sensor.

A workpiece unit that includes a workpiece, a tape stuck to the workpiece; and an annular frame to which an outer circumferential edge of the tape is stuck and which has an opening defined centrally therein. The workpiece is disposed in the opening in the annular frame and supported on the annular frame by the tape, and at least one of the tape and the annular frame has an irreversible discoloring section that discolors in response to an external stimulus. Such a configuration makes it possible to determine whether or not a process involving an external stimulus has been carried out on the workpiece unit, based on the appearance of the workpiece unit (i.e., based on whether the irreversible discoloring section has been discolored or not).

A plasma processing apparatus includes a stage having a placing surface on which a workpiece is accommodated; a heater provided in the stage and configured to adjust a temperature of the placing surface of the stage; and a controller. The controller is configured to control a supply power to the heater; measure the supply power in a transient state where the supply power to the heater increases and in a second steady state where the supply power to the heater is stable in an extinguished state of plasma; calculate a heat input amount and a heat resistance by performing a fitting on a calculation model that calculates the supply power in the transient state using the heat input amount from the plasma and the heat resistance between the workpiece and the heater as parameters; and calculate a temperature of the workpiece in the first steady state.

A substrate support including a body, a heating element, a first radio frequency filter, and a second radio frequency filter. The body is configured to support a substrate. The heating element is at least partially implemented in a first portion of the body. The first radio frequency filter is connected to an input of the heating element and at least partially implemented in a second portion of the body and connected to the heating element by a first via. The second radio frequency filter is connected to an output of the heating element and at least partially implemented in the second portion or a third portion of the body.

Provided is an apparatus for processing a substrate, which includes a chamber having a processing space in which a process of depositing a thin-film on a substrate is performed and a structure which is installed to expose at least one surface to the processing space and in which a coating layer made of a polymer forming at least one of covalent bond and double bond at an end tail is formed on the surface exposed to the processing space.

Thus, the substrate processing apparatus in accordance with an exemplary embodiment may restrict or prevent particle generation and substrate pollution generation caused by a thin-film deposited in the chamber. Also, a period of cleaning the chamber and a structure or a component in the chamber may be extended. Thus, a product yield rate and an apparatus operation efficiency may improve.