A manufacturing method includes depositing a chamber protective layer in a chamber, supplying a first purge gas to the chamber, transferring a substrate to the chamber, the substrate being disposed inside an edge ring on an electrostatic chuck, processing the substrate, supplying a second purge gas to the chamber, transferring the substrate to an outside of the chamber, removing the chamber protective layer, and supplying a third purge gas to the chamber. Variation of the surface roughness of the edge ring may be minimal. A ratio of an edge gas flow rate of gas supplied to an edge of the substrate and the edge ring to a central gas flow rate of gas supplied to a central portion of the substrate in the processing the substrate may be 0.05 to 19. The flow rate ratio may be more than 1 in the supplying the second purge gas.

An apparatus for processing a substrate may comprise a reaction chamber provided with a chamber wall; a gate valve provided to the wall; a substrate transfer chamber operational connected to the gate valve; a substrate transfer robot disposed within the substrate transfer chamber for transferring the substrate between the reaction chamber and the substrate transfer chamber through the gate valve; a substrate support provided with a heater disposed within the reaction chamber; and a chiller provided to the wall opposite the gate valve.

There is provided a technique that includes: (a) loading a substrate into a process container; (b) heating the substrate by supplying a first gas, which is heated when passing through a first heater installed at a first gas supply line, to the substrate via a gas supplier; (c) supplying a second gas, which flows through a second gas supply line different from the first gas supply line, to the substrate mounted on a substrate mounting table in the process container, via the gas supplier; and (d) lowering a temperature of the gas supplier by supplying a third gas, which has a temperature lower than that of the first gas, to the gas supplier between (b) and (c).

A gas-phase chemical reactor, a system including the reactor, and methods of using the reactor and system are disclosed. An exemplary reactor includes a reaction chamber and is configured to provide a precursor within the reaction chamber for a soak period—e.g., a period wherein a supply of the precursor to the reaction chamber is ceased and before purging of the reaction chamber begins. This allows relatively high residence times, relatively high partial pressures of the precursor(s) and/or a relatively high absolute pressure to be obtained within the reaction chamber during substrate processing.

A method and apparatus for dosage measurement and monitoring in an ion implantation system is disclosed. In one embodiment, a transferring system, includes: a vacuum chamber, wherein the vacuum chamber is coupled to a processing chamber; a shaft coupled to a ball screw, wherein the ball screw and the shaft are configured in the vacuum chamber; and a vacuum rotary feedthrough, wherein the vacuum rotary feedthrough comprises a magnetic fluid seal so as to provide a high vacuum sealing, and wherein the vacuum rotary feedthrough is configured through a first end of the vacuum chamber and coupled to the ball screw so as to provide a rotary motion on the ball screw.

The substrate treating apparatus includes a processing module and an index module on which a cassette having the substrate received therein is placed and that includes an index robot that transfers the substrate between the cassette and the processing module. The processing module includes a process chamber and a transfer chamber. The process chamber includes a support unit. The support unit includes a support on which the substrate is placed and a ring member that surrounds the substrate placed on the support and that is provided so as to be detachable from the support. The apparatus further includes a carrier storage unit that stores a carrier that is mounted on a hand of the main transfer robot or the index robot and on which the ring member is placed when the ring member is transferred by the main transfer robot or the index robot.

Semiconductor processing apparatuses and methods are provided in which a pre-clean chamber receives a semiconductor wafer from a metal gate layer deposition chamber and at least partially removes an oxide layer on a metal gate layer. In some embodiments, a semiconductor processing apparatus includes a plurality of metal gate layer deposition chambers. Each of the metal gate layer deposition chambers is configured to form a metal gate layer on a semiconductor wafer. At least one pre-clean chamber of the apparatus is configured to receive the semiconductor wafer from one of the metal gate layer deposition chamber and at least partially remove an oxide layer on the metal gate layer.

A plasma processing apparatus includes a chamber providing a space for processing a substrate, a substrate stage configured to support the substrate within the chamber and including a lower electrode, an upper electrode facing the lower electrode, a focus ring in or on an upper peripheral region of the substrate stage to surround the substrate, and a plasma adjustment assembly in at least one of a first position between the upper electrode and the lower electrode and a second position between the focus ring and the lower electrode, the plasma adjustment assembly including a photoreactive material layer and a plurality of light sources configured to irradiate light onto a local region of the photoreactive material layer. A capacitance of the local region is changed as the light is irradiated to the local region.

The invention relates to a method and a system for the plasma treatment of successive substrates comprising one or more steel products in which the substrates are transported, one after another, through at least one plasma treatment zone, characterized in that the electric power for generating the plasma in the treatment zone is varied according to the area of the substrate is present in this treatment zone when the substrate is running through this zone.

A semiconductor processing apparatus according to the present invention includes a main body cover that covers a main body device and a control device. The main body cover has a transfer opening for transferring a semiconductor, and the main body cover further has an intake port that generates an air flow in a horizontal direction inside the main body cover.