Patent classifications
H01J37/32743
PREPARATION METHOD FOR BIFACIAL PERC SOLAR CELL
The present invention discloses a method for preparing a bifacial PERC solar cell. The present invention has high photoelectric conversion efficiency, high appearance quality, and high EL yield, and could solve the problems of both scratching and undesirable deposition.
Ultrathin atomic layer deposition film accuracy thickness control
Methods for depositing films by atomic layer deposition using cyclic siloxane precursors are provided. Methods involve exposing the substrate to a cyclic siloxane precursor during operation of an atomic layer deposition cycle to form silicon oxide.
APPARATUS AND METHOD FOR PROCESSING SUBSTRATE
A substrate processing apparatus includes a process chamber including a reaction space in which at least one substrate is mounted, a transfer chamber for transferring the at least one substrate to the process chamber, and a buffer chamber including a rotating device for rotating the at least one substrate by a predetermined angle, wherein the rotating device includes a rotating plate, a rotating shaft for rotating the rotating plate by the predetermined angle, a drive unit for driving the rotating shaft, a controller for controlling the drive unit, and a plurality of substrate support members, which are disposed on the rotating plate and on which the at least one substrate is mounted.
Plasma polymerization apparatus and plasma polymerization method using the same
A plasma polymerization apparatus is provided for forming a polymerization coating on an inner surface of an object. The plasma polymerization apparatus comprises a chamber, a gas supply, a monomer source, a first electrode, a second electrode, a power source, and a metal foil. The gas supply is connected to the chamber for filling the chamber with a working gas. The monomer source is connected to the chamber for providing a vaporized monomer material into the chamber. The first electrode is located at a first side of the chamber. The second electrode is located at a second side of the chamber. The power source is electrically connected to the first electrode and the second electrode for generating plasma. The metal foil is wrapped around an outer surface of the object and placed between the first electrode and the second electrode. A plasma polymerization method is also provided.
PLASMA POLYMERIZATION APPARATUS AND PLASMA POLYMERIZATION METHOD USING THE SAME
A plasma polymerization apparatus is provided for forming a polymerization coating on an inner surface of an object. The plasma polymerization apparatus comprises a chamber, a gas supply, a monomer source, a first electrode, a second electrode, a power source, and a metal foil. The gas supply is connected to the chamber for filling the chamber with a working gas. The monomer source is connected to the chamber for providing a vaporized monomer material into the chamber. The first electrode is located at a first side of the chamber. The second electrode is located at a second side of the chamber. The power source is electrically connected to the first electrode and the second electrode for generating plasma. The metal foil is wrapped around an outer surface of the object and placed between the first electrode and the second electrode. A plasma polymerization method is also provided.
Process kit for multi-cathode processing chamber
Embodiments of a process kit for use in a multi-cathode process chamber are disclosed herein. In some embodiments, a process kit includes a rotatable shield having a base, a conical portion extend downward and radially outward from the base, and a collar portion extending radially outward from a bottom of the conical portion; an inner deposition ring having a leg portion, a flat portion extending radially inward from the leg portion, a first recessed portion extending radially inward from the flat portion, and a first lip extending upward from an innermost section of the first recessed portion; and an outer deposition ring having a collar portion, an upper flat portion disposed above and extending radially inward from the collar portion, a second recessed portion extending inward from the upper flat portion, and a second lip extending upward from an innermost section of the second recessed portion.
Apparatus and method for treating substrate
Disclosed is An apparatus for treating a substrate includes a chamber having a treatment space provided therein to treat the substrate and having an entrance for introducing or withdrawing the substrate, a liner disposed in the treatment space, disposed adjacent to an inner sidewall of the chamber, and having an opening formed at a position of facing the entrance to introduce or withdraw the substrate, a supporting unit to support the substrate in the treatment space, a gas supplying unit to supply process gas to the treatment space, a plasma source to produce plasma from the process gas, and a door assembly to open or close the entrance. The door assembly includes a door which includes a door unit provided outside the chamber to be movable between an opening position to open the entrance and a closing position to close the entrance, and an insertion unit extending from the door unit toward the treatment space and inserted into the opening of the liner at the closing position, and a door driving unit to drive the door.
Reactor system coupled to an energy emitter control circuit
A microwave energy source that generates a microwave energy is disclosed. The microwave energy source has an on-state and an off-state. A control circuit is coupled to the microwave energy source and includes an output to generate a control signal that adjusts a pulse frequency of the microwave energy. A voltage generator applies a non-zero voltage to the microwave energy source during the off-state. A frequency and a duty cycle of the non-zero voltage is based on a frequency and a duty cycle of the control signal. A waveguide is coupled to the microwave energy source. The waveguide has a supply gas inlet that receives a supply gas, a reaction zone that generates a plasma, a process inlet that injects a raw material into the reaction zone, and an outlet that outputs a powder based on a mixture of the supply gas and the raw material within the plasma.
SERVO CONTROL OF A LIFT APPARATUS AND METHODS OF USE THEREOF
Disclosed herein are embodiments of a lift apparatus and systems containing a support and at least one lift apparatus for moving a substrate between the support and a transfer plane, using a servo-control system. Further disclosed herein are methods for servo control of a lift apparatus and lifting a substrate off of a support or lowering the substrate onto the support.
DEVICE FOR TRANSPORTING A SUBSTRATE, TREATMENT DEVICE WITH A RECEIVING PLATE ADAPTED TO A SUBSTRATE CARRIER OF A DEVICE OF THIS KIND, AND METHOD FOR PROCESSING A SUBSTRATE USING A DEVICE OF THIS KIND FOR THE TRANSPORT OF A SUBSTRATE, AND TREATMENT FACILITY
The invention relates to an apparatus for transporting a substrate into or out of a treatment apparatus, to a treatment apparatus, to a method of processing a substrate and to a treatment system having a movement arrangement for moving such an apparatus for transporting a substrate. In this case, the apparatus for transporting a substrate has a substrate carrier that includes a horizontally extending holding area and one or a plurality of gripping arms. The holding area is even and uniform on a first surface facing the substrate, the shape of said holding area substantially corresponding to the shape of the substrate and the area size of said holding area being substantially the same as the area size of the substrate, the substrate being held with its rear side on the holding area merely by its weight. The treatment apparatus has a receiving plate on which the substrate is held during the treatment, the receiving plate having a recess that is suitable for receiving such a substrate carrier during the treatment of the substrate in a first surface.