Methods and apparatus for preparing a protective coating are described. In one example aspect, an apparatus for preparing a protective coating includes a chamber, a substrate positioned within the chamber configured to hold at least a target object, an inlet pipe configured to direct a monomer vapor into the chamber, and one or more electrodes configured to perform a chemical vapor deposition process to produce a multi-layer coating. The chemical vapor deposition process comprises multiple cycles, each cycle comprising a pretreatment phase and a coating phase to produce a layer of the multi-layer coating.

A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.

A gas-phase chemical reactor, a system including the reactor, and methods of using the reactor and system are disclosed. An exemplary reactor includes a reaction chamber and is configured to provide a precursor within the reaction chamber for a soak period—e.g., a period wherein a supply of the precursor to the reaction chamber is ceased and before purging of the reaction chamber begins. This allows relatively high residence times, relatively high partial pressures of the precursor(s) and/or a relatively high absolute pressure to be obtained within the reaction chamber during substrate processing.

A plasma processing apparatus is provided. The plasma processing apparatus includes a processing chamber defining a vertical direction and a lateral direction. The plasma processing apparatus includes a pedestal disposed within the processing chamber. The pedestal is configured to support the substrate. The plasma processing apparatus includes a radio frequency (RF) disposed within the processing chamber. The RF bias electrode defines a RF zone extending between a first end of the RF bias electrode and a second end of the RF bias electrode along the lateral direction. The plasma processing apparatus includes a focus ring disposed within the processing chamber. The plasma processing apparatus further includes a focus ring adjustment assembly. The focus ring adjustment assembly includes a lift pin positioned outside of the RF zone. The lift pin is movable along the vertical direction to adjust a distance between the pedestal and the focus ring along the vertical direction.

Methods and apparatus for preparing a protective coating are described. In one example aspect, a method for preparing a protective coating includes positioning one or more target objects into a chamber. The chamber comprises a movable substrate and one or more trays coupled to the movable substrate to hold the one or more target objects such that the one or more target objects are movable within the chamber. The method also includes adding a monomer vapor into the chamber and performing a chemical vapor deposition process that comprises at least one cycle, each including a pretreatment phase and a coating phase.

A deposition system is disclosed that allows for growth of inclined c-axis piezoelectric material structures. The system integrates various sputtering modules to yield high quality films and is designed to optimize throughput lending it to a high-volume in manufacturing environment. The system includes two or more process modules including an off-axis module constructed to deposit material at an inclined c-axis and a longitudinal module constructed to deposit material at normal incidence; a central wafer transfer unit including a load lock, a vacuum chamber, and a robot disposed within the vacuum chamber and constructed to transfer a wafer substrate between the central wafer transfer unit and the two or more process modules; and a control unit operatively connected to the robot.

A substrate processing method includes inserting a substrate from an outside into a processing space, supplying a process gas from a gas supply unit to the processing space, producing plasma based on the process gas, performing an etching process for the substrate using ions included in the plasma, and discharging a processed gas produced in the etching process through a discharge part. The discharge part includes a first slit extending through a flange part, and a second slit connected to the first slit while extending through a side wall part connected to the flange part. A vertical length of the first slit is equal to a vertical length of the second slit. A horizontal length of the first slit is about 5 times to about 7 times the vertical length of the first slit.

A method for cleaning debris and contamination from an etching apparatus is provided. The etching apparatus includes a process chamber, a source of radio frequency power, an electrostatic chuck within the process chamber, a chuck electrode, and a source of DC power connected to the chuck electrode. The method of cleaning includes placing a substrate on a surface of the electrostatic chuck, applying a plasma to the substrate, thereby creating a positively charged surface on the surface of the substrate, applying a negative voltage or a radio frequency pulse to the electrode chuck, thereby making debris particles and/or contaminants from the surface of the electrostatic chuck negatively charged and causing them to attach to the positively charged surface of the substrate, and removing the substrate from the etching apparatus thereby removing the debris particles and/or contaminants from the etching apparatus.

There is provided a processing system. The processing system comprises: a chamber in which a consumable member is installed; a storage module configured to store the consumable member; a position detection sensor configured to detect a position of the consumable member; a vacuum transfer module connected to the chamber and the storage module, the vacuum transfer module having a transfer robot configured to transfer the consumable member between the chamber and the storage module; and a controller. The controller is configured to perform processes of: (a) controlling the transfer robot to transfer the consumable member installed in the chamber to the storage module; (b) detecting the position of the consumable member transferred to the storage module by the position detection sensor; and (c) controlling the transfer robot to transfer a new consumable member different from the consumable member from the storage module to the chamber at a position adjusted based on the position of the consumable member detected in the process (b).

The inventive concept provides a substrate treating apparatus. The substrate includes a process chamber in which a substrate is treated, and a transfer robot that transfers the substrate and a focusing ring provided in a treatment space of the process chamber to the treatment space and having a hand, wherein the process chamber includes a treatment container that provides the treatment space, a chuck having a support surface supporting the substrate in the treatment space, and a lift pin module that lifts a lower surface of the focusing ring in a state in which the substrate is supported by the focusing ring, and the chuck is provided as a blocking plate in which a lift pin hole is not formed.