Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit includes a slit door having an arcuate profile and including a first plate coupled to a second plate, wherein the first plate is configured to be coupled to an actuator, and wherein the second plate has a processing volume facing surface that includes silicon.

Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.

A plasma processing apparatus is for performing plasma processing in a depressurizable inner space. The apparatus includes a chamber having therein an inner space, a supporting table provided in the inner space and configured to support a substrate to be mounted thereon, one or more first members included in the chamber or separate from the chamber and partially exposed to a depressurized environment including the inner space, and one or more second members included in the chamber or separate from the chamber, each being in contact with a corresponding one of said one or more first members, and partially disposed in an atmospheric pressure environment. The apparatus further includes one or more feeders each of which is configured to supply a coolant to a cavity formed in a corresponding one of said one or more second members.

Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel in which a substrate is processed; an outer vessel configured to cover an outer circumference of the process vessel; a gas flow path provided between the outer vessel and the outer circumference of the process vessel; an exhaust path in communication with the gas flow path; an adjusting valve configured to be capable of adjusting a conductance of the exhaust path; a first exhaust apparatus provided on the exhaust path downstream of the adjusting valve; a pressure sensor configured to measure an inner pressure of the outer vessel; and a controller configured to be capable of adjusting an exhaust volume flow rate of the first exhaust apparatus by controlling the first exhaust apparatus based on a pressure measured by the pressure sensor.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having an inner space; a separation unit provided at the inner space and configured to be combined with the chamber to divide the inner space into a plurality of treating spaces and a transfer space; a plurality of support units provided at each of the plurality of treating spaces and configured to support a substrate; a plurality of gas supply units provided at each of the plurality of treating spaces and configured to supply a process gas to the substrate supported on the plurality of support units; and a transfer unit provided at the transfer space and configured to transfer the substrate between the plurality of treating spaces.

A plasma processing device may include first and second processing devices. The first processing device may include a first chamber, a first exhaust pump which provides, into the first chamber, a first pressure equal to or higher than 0.1 Pa and equal to or lower than 0.3 Pa while depressurizing the first chamber, a first holding unit which holds resin, a first gas introduction unit which introduces, into the first chamber, first gas for desorbing at least a part of atoms constituting the resin from a surface of the resin when turned into plasma, and a first plasma generation unit which turns the first gas into plasma at the first pressure. The second processing device may include a grounded second chamber, a second exhaust pump which provides, into the second chamber, a second pressure equal to or higher than 30% and equal to or lower than 50% of the first pressure at which the desorption step has been performed while depressurizing the second chamber, a second holding unit which holds the resin processed in the first chamber and to which a first DC voltage may be applied, a second gas introduction unit which introduces, into the second chamber, second gas to generate hydroxyl radicals by being turned into plasma, and a second plasma generation unit which turns the second gas into plasma at the second pressure and to which a second DC voltage higher than the first DC voltage may be applied.

Multi-station processing tools with station-varying support features for backside processing are provided. The support features in a first station may hold a wafer at a first set of points during backside deposition, blocking backside deposition, etching, or other processing at those points. The support features in a second station may hold a wafer at a second set of points that don’t overlap with the first set of points.

A substrate processing apparatus includes a process chamber including a reaction space in which at least one substrate is mounted, a transfer chamber for transferring the at least one substrate to the process chamber, and a buffer chamber including a rotating device for rotating the at least one substrate by a predetermined angle, wherein the rotating device includes a rotating plate, a rotating shaft for rotating the rotating plate by the predetermined angle, a drive unit for driving the rotating shaft, a controller for controlling the drive unit, and a plurality of substrate support members, which are disposed on the rotating plate and on which the at least one substrate is mounted.

A plasma processing apparatus is for performing plasma processing in a depressurizable inner space. The apparatus includes a chamber having therein an inner space, a supporting table provided in the inner space and configured to support a substrate to be mounted thereon, one or more first members included in the chamber or separate from the chamber and partially exposed to a depressurized environment including the inner space, and one or more second members included in the chamber or separate from the chamber, each being in contact with a corresponding one of said one or more first members, and partially disposed in an atmospheric pressure environment. The apparatus further includes one or more feeders each of which is configured to supply a coolant to a cavity formed in a corresponding one of said one or more second members.