An object is to provide an atmospheric plasma processing method and an atmospheric plasma processing apparatus capable of suppressing a decrease in a processing speed caused by accompanying gas and performing highly efficient processing in a case where the processing is performed on a workpiece using atmospheric plasma by introducing plasma generation gas between a pair of electrodes and the workpiece from an inner side flow passage passing between the pair of electrodes while relatively moving the workpiece and the pair of electrodes. The object is achieved by defining p*, which is represented by Expression “p*=(h/2Uμ)×(−dP/dx)”, to satisfy 0<p*≤9 in a case where a distance between the pair of electrodes and the workpiece is denoted by h, a relative movement speed between the pair of electrodes and the workpiece is denoted by U, a viscosity of gas existing between the pair of electrodes and the workpiece is denoted by μ, a gas pressure between the pair of electrodes and the workpiece is denoted by P, and a position in a transport direction of the workpiece is denoted by x.

Embodiments of the present disclosure generally relate to methods of forming hardmasks. Embodiments described herein enable, e.g., formation of carbon-containing hardmasks having reduced film stress. In an embodiment, a method of processing a substrate is provided. The method includes positioning a substrate in a processing volume of a processing chamber and depositing a diamond-like carbon (DLC) layer on the substrate. After depositing the DLC layer, the film stress is reduced by performing a plasma treatment, wherein the plasma treatment comprises applying a radio frequency (RF) bias power of about 100 W to about 10,000 W.

A film-forming apparatus and a method for manufacturing a magnetic recording medium are provided. The film-forming apparatus includes a rotating body which moves a base material with a strip shape which has flexibility, a plurality of cathodes which are provided to oppose a rotating surface of the rotating body; and a plurality of accommodating sections which accommodate each of the plurality of cathodes. The method includes sequentially film-forming a plurality of thin films on a base material using a plurality of cathodes which are provided on a moving path of the base material while moving the base material with a strip shape which has flexibility. Each of the plurality of cathodes is accommodated in a plurality of accommodating sections.

The present invention improves the in-plane uniformity of films formed via a plasma treatment. It is provided a plasma treatment device comprising: an electrode plate arranged in a reaction vessel; a counter electrode arranged parallel so as to opposite to the electrode plate in the reaction vessel; a transmission plate to supply frequency power to the electrode plate from outside of the reaction vessel, the transmission plate being connected from non-opposite side not opposing to the counter electrode of the electrode plate; and an insulator with a container shape, the insulator being arranged in the reaction vessel and storing the electrode plate therein; wherein the non-opposite side of the electrode plate closely contacts to an inner bottom surface of the insulator with the container shape, wherein a side surface of the electrode plate closely contacts to an inner side surface of the insulator with the container shape, and wherein a hole edge portion of the insulator with the container shape is formed so as to protrude toward a counter electrode side.

A method for treating a flexible plastic substrate is provided herein. The method includes establishing an atmospheric pressure plasma beam from an inert gas using a power of greater than about 90W, directing the plasma beam toward a surface of the flexible polymer substrate, and scanning the plasma beam across the surface of the polymer substrate to form a treated substrate surface.

A method for treating a flexible plastic substrate is provided herein. The method includes establishing an atmospheric pressure plasma beam from an inert gas using a power of greater than about 90W, directing the plasma beam toward a surface of the flexible polymer substrate, and scanning the plasma beam across the surface of the polymer substrate to form a treated substrate surface.

Exemplary methods of forming a coating of material on a substrate may include forming a plasma of a first precursor and an oxygen-containing precursor. The first precursor and the oxygen-containing precursor may be provided in a first flow rate ratio. The methods may include depositing a first layer of material on the substrate. While maintaining the plasma, the methods may include adjusting the first flow rate ratio to a second flow rate ratio. The methods may include depositing a second layer of material on the substrate.

A movement system is provided for moving a non-flat substrate across a sputter flux distribution without circumferentially exposing the non-flat substrate to the sputter flux distribution. The movement system is arranged for a first movement of translationally transporting the non-flat substrate along the sputter flux distribution, and a second movement of translating and/or rotating the non-flat substrate with respect to the sputter flux distribution.

A method for treating a flexible plastic substrate is provided herein. The method includes establishing an atmospheric pressure plasma beam from an inert gas using a power of greater than about 90W, directing the plasma beam toward a surface of the flexible polymer substrate, and scanning the plasma beam across the surface of the polymer substrate to form a treated substrate surface.

The present disclosure relates to a field of dry etching technology. The present disclosure provides an ultra-large area scanning reactive ion etching machine and an etching method thereof. The ultra-large area scanning reactive ion etching machine includes: an injection chamber (101), an etching reaction chamber (102), a transition chamber (103), and an etching ion generation chamber (104). By moving a sample holder (111) among the injection chamber (100), the etching reaction chamber (102) and the transition chamber (103) in a scanning direction, a scanning etching is performed on a sample (100) placed on the sample holder (111), which may realize a large-area, uniform and efficient etching.