Apparatus and methods of processing a substrate in a plasma enhanced spatial atomic layer deposition chamber. A substrate is moved through one or more plasma processing regions and one or more non-plasma processing regions while the plasma power is pulsed to prevent a voltage differential on the substrate from exceeding a breakdown voltage of the substrate or device being formed on the substrate.

An etching method for etching a film in a recessed pattern formed on a surface of a substrate in a process chamber to form a V-shaped sectional shape includes setting two or more parameters of the process chamber to such conditions that an etching rate of the surface of the substrate becomes higher than that of an inside of the recessed pattern; and supplying an etching gas to the surface of the substrate under the condition.

Disclosed is an apparatus and method of processing substrate, which facilitates to improve deposition uniformity of a thin film deposited on a substrate, and to control quality of a thin film, wherein the apparatus includes a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the bottom of the process chamber; a chamber lid confronting the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributor for locally distributing activated source gas on the substrate, wherein the gas distributor locally confronting the substrate supporter is provided in the chamber lid, wherein the gas distributor forms plasma by the use of plasma formation gas, and activates the source gas by distributing the source gas to some of plasma area for formation of the plasma.

Methods and systems for thermal management methods to control the rates of chemical reaction at the surface of a substrate being treated by atmospheric plasma. Integrated thermal management includes static heating and cooling of the plasma head and the substrate, as well as dynamic heating and cooling of the substrate surface, before and after the substrate passes the linear aperture of the atmospheric plasma head.

Disclosed is an apparatus and method of processing substrate, which facilitates to improve deposition uniformity of a thin film deposited on a substrate, and to control quality of a thin film, wherein the apparatus includes a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the bottom of the process chamber; a chamber lid confronting the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributor for locally distributing activated source gas on the substrate, wherein the gas distributor locally confronting the substrate supporter is provided in the chamber lid, wherein the gas distributor forms plasma by the use of plasma formation gas, and activates the source gas by distributing the source gas to some of plasma area for formation of the plasma.

To provide a wire electric discharge machine capable of suitably and simply performing thermal displacement correction on upper and lower guides. Provided are a storage unit that stores temperatures of machine elements and actual values for relative positions of upper and lower guides to be associated with each other as associated data; and a relational expression calculation unit that infers and calculates a relational expression between the temperature of the machine element and the relative positions of the upper and lower guides by way of machine learning with this associated data as training data. Additionally provided are a position estimation unit that substitutes temperatures of the machine element into the relational expression and calculates an estimated value for the relative position of the upper and lower guides; and a correction amount calculation unit that calculates a correction amount for the upper and lower guides, based on the estimated value for the relative position. Further provided is a correction execution unit that performs correction of the relative position of the upper and lower guides based on this correction amount.

The present invention improves the in-plane uniformity of films formed via a plasma treatment. It is provided a plasma treatment device comprising: an electrode plate arranged in a reaction vessel; a counter electrode arranged parallel so as to opposite to the electrode plate in the reaction vessel; a transmission plate to supply frequency power to the electrode plate from outside of the reaction vessel, the transmission plate being connected from non-opposite side not opposing to the counter electrode of the electrode plate; and an insulator with a container shape, the insulator being arranged in the reaction vessel and storing the electrode plate therein; wherein the non-opposite side of the electrode plate closely contacts to an inner bottom surface of the insulator with the container shape, wherein a side surface of the electrode plate closely contacts to an inner side surface of the insulator with the container shape, and wherein a hole edge portion of the insulator with the container shape is formed so as to protrude toward a counter electrode side.

A film-forming apparatus and a method for manufacturing a magnetic recording medium are provided. The film-forming apparatus includes a rotating body which moves a base material with a strip shape which has flexibility, a plurality of cathodes which are provided to oppose a rotating surface of the rotating body; and a plurality of accommodating sections which accommodate each of the plurality of cathodes. The method includes sequentially film-forming a plurality of thin films on a base material using a plurality of cathodes which are provided on a moving path of the base material while moving the base material with a strip shape which has flexibility. Each of the plurality of cathodes is accommodated in a plurality of accommodating sections.

In one aspect, a method is described. The method may include exposing a printing surface to a first plasma in order to increase a hydrophilicity of the printing surface. The method may further include, after increasing the hydrophilicity of the printing surface, depositing a printing material on the printing surface. Additionally, the method may include, after depositing the printing material on the printing surface, exposing the printing surface to a second plasma in order to increase a hydrophobicity of the printing surface.

A device and a method for the coating of lenses. The lenses which are to be coated are arranged in pairs over parallel tubular targets such that they each overlap both a homogeneous and an inhomogeneous removal region of the target and the lenses rotated so that an especially uniform coating can be achieved.